Spatial Confinement-Assisted Vapor-Phase Synthesis of Two-Dimensional Cs3Sb2I9 for Photodetection Application DOI

S. Sheng,

Xinyu Guo,

Xin Li

et al.

ACS Applied Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 20, 2025

Language: Английский

Polarization-Sensitive, Self-Powered Photodetector Based on SnO2/MoS2 van der Waals Heterojunction DOI
Tong Xu,

Yun Wei,

Kai Tang

et al.

Optics Letters, Journal Year: 2025, Volume and Issue: 50(5), P. 1629 - 1629

Published: Feb. 11, 2025

Polarization-sensitive ultraviolet photodetectors have a wide range of applications in remote sensing, analytical imaging, information encryption, and anti-counterfeiting. Herein, one-dimensional tin dioxide (SnO 2 ) single crystals by using the chemical vapor deposition (CVD) method are reported. The high in-plane anisotropic structure, phonon vibrations, refractive index SnO experimentally elucidated. Based on CVD-grown crystals, mixed-dimensional /MoS van der Waals (vdWs) heterostructure is proposed to realize polarization-sensitive self-powered photodetector. Owing high-quality vdWs heterojunction, device exhibits pronounced photovoltaic performances. Significantly, anisotropy ratio devices can be as 4.2 compared 1.7 for pure devices. high-resolution polarization imaging capability was further demonstrated. Moreover, polarized image maintains an about 4.0 has excellent stability under long-term operating conditions without degradation. Our work provides strategy fabricating low-dimensional -based high-performance detection.

Language: Английский

Citations

0

In Situ Construction of Flexible Low‐Dimensional van der Waals Material Photodetectors DOI Creative Commons
Yu Chen,

Huanrong Liang,

Xinyi Guan

et al.

Advanced Physics Research, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 21, 2025

Abstract By virtue of the excellent flexibility, conformability, portability, and aesthetics, wearable photodetectors have attracted worldwide research enthusiasm over past decade. However, traditional bulk covalent semiconductors are difficult to be applied due their pronounced rigidity. Profiting from self‐passivated surface, carrier mobility, strong light‐harvesting ability, low‐dimensional van der Waals materials (LDvdWMs) shown immense potential for application in optoelectronic devices. Nevertheless, preparation flexible through exfoliation/transfer or solution methods has suffered severe drawbacks spanning low production yield, contamination, uncompetitive device properties. Therefore, researchers been committed exploring alternative strategies. In response this, current review systematically summarizes latest advancements directly constructing LDvdWM on substrates, including developing low‐melting‐point targeted materials, electron‐beam‐enabled crystallization, photonic modified chemical vapor deposition, pulsed‐laser with elaboration fundamental mechanisms enabling situ deposition LDvdWMs. Finally, tricky challenges standing way this field epitomized solutions addressing them proposed. On whole, underscores distinctive pathways development photodetectors, which probably usher next‐generation technologies.

Language: Английский

Citations

0

Ultra‐Long 1D Double Perovskite CsAg0.4Cu1.6I3 Single Crystal for UV Imaging Memory DOI
Fa Cao, Ying Liu, Enliu Hong

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 29, 2025

Abstract Emerging copper‐based lead‐free perovskites have garnered significant attention for ultraviolet (UV) photodetection due to their atmospheric stability and optoelectronic properties. However, practical applications are hindered by low carrier density limited device performance. In this work, a breakthrough is reported in synthesizing ultra‐long 1D double perovskite CsAg x Cu 2‐x I 3 (0≤x≤2) single crystals (SCs) via an anti‐solvent recrystallization method. The SCs achieve unprecedented lengths of 2.2 cm 0.4 1.6 2 (CAI123), setting new benchmarks Cu/Ag‐based perovskites. By tuning the Ag‐doping ratio, bandgap continuously modulated from 3.60 3.24 eV, enabling tailored responses. optimized ‐based photodetector exhibits exceptional performance at 360 nm, with peak responsivity 82.5 mA W −1 high detectivity 1.3 × 10 12 Jones (@ 3V; light intensity: 2.8 mW −2 ), superior than CsCu (20.7 ) CAI123 (15.8 ). Notably, detector array demonstrates pioneering UV imaging memory capabilities, retaining patterns over s slow release self‐trapped defect‐related states. This work not only advances synthesis eco‐friendly but also unlocks novel functionalities next‐generation optoelectronics sensing, imaging, devices.

Language: Английский

Citations

0

Spatial Confinement-Assisted Vapor-Phase Synthesis of Two-Dimensional Cs3Sb2I9 for Photodetection Application DOI

S. Sheng,

Xinyu Guo,

Xin Li

et al.

ACS Applied Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 20, 2025

Language: Английский

Citations

0