Bottom Contact‐Enhanced P‐Type Transport Behavior in Plasma‐Doped MoTe2 DOI
Yi Qian, Xiaochi Liu, Yumei Jing

et al.

physica status solidi (RRL) - Rapid Research Letters, Journal Year: 2025, Volume and Issue: unknown

Published: April 26, 2025

Two‐dimensional (2D) semiconductors, such as molybdenum ditelluride (MoTe 2 ), hold great promise for future electronic devices, but achieving stable and efficient p ‐type transport remains a challenge. A major issue is the formation of high contact barriers, which significantly hinder hole injection due to poor coordination between engineering doping. Herein, enhanced in MoTe transistors are reported by combining surface oxidation doping bottom‐contacted configuration. By comparing top‐contacted it demonstrated that design ensures uniform across entire channel, preventing barriers caused unintentional –n junctions at contacts. As an application demonstration, inverter exhibiting complete logic swing realized integrating transistor with n‐type ReS transistor. Moreover, selective nature plasma process allows effective ‐doping without affecting materials resistance. An anti‐ambipolar ‐ReS heterostructure three‐valued circuit further demonstrated, verifying potential multi‐valued applications. The findings highlight importance provide strategy optimizing 2D semiconductors.

Language: Английский

Bottom Contact‐Enhanced P‐Type Transport Behavior in Plasma‐Doped MoTe2 DOI
Yi Qian, Xiaochi Liu, Yumei Jing

et al.

physica status solidi (RRL) - Rapid Research Letters, Journal Year: 2025, Volume and Issue: unknown

Published: April 26, 2025

Two‐dimensional (2D) semiconductors, such as molybdenum ditelluride (MoTe 2 ), hold great promise for future electronic devices, but achieving stable and efficient p ‐type transport remains a challenge. A major issue is the formation of high contact barriers, which significantly hinder hole injection due to poor coordination between engineering doping. Herein, enhanced in MoTe transistors are reported by combining surface oxidation doping bottom‐contacted configuration. By comparing top‐contacted it demonstrated that design ensures uniform across entire channel, preventing barriers caused unintentional –n junctions at contacts. As an application demonstration, inverter exhibiting complete logic swing realized integrating transistor with n‐type ReS transistor. Moreover, selective nature plasma process allows effective ‐doping without affecting materials resistance. An anti‐ambipolar ‐ReS heterostructure three‐valued circuit further demonstrated, verifying potential multi‐valued applications. The findings highlight importance provide strategy optimizing 2D semiconductors.

Language: Английский

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