Reliable Memristor Crossbar Array Based on 2D Layered Nickel Phosphorus Trisulfide for Energy‐Efficient Neuromorphic Hardware DOI Open Access
Zhengjin Weng,

Haofei Zheng,

Lingqi Li

et al.

Small, Journal Year: 2023, Volume and Issue: 20(5)

Published: Sept. 26, 2023

Abstract Designing reliable and energy‐efficient memristors for artificial synaptic arrays in neuromorphic computing beyond von Neumann architecture remains a challenge. Here, based on emerging layered nickel phosphorus trisulfide (NiPS 3 ) are reported that exhibit several favorable characteristics, including uniform bipolar nonvolatile switching with small operating voltage (<1 V), fast speed (< 20 ns), high On/Off ratio (>10 2 ), the ability to achieve programmable multilevel resistance states. Through direct experimental evidence using transmission electron microscopy energy dispersive X‐ray spectroscopy, it is revealed resistive mechanism Ti/NiPS /Au device related formation dissolution of Ti conductive filaments. Intriguingly, further investigation into microstructural chemical properties NiPS suggests penetration ions accompanied by drift phosphorus‐sulfur ions, leading induced P/S vacancies facilitate Furthermore, demonstrated memristor, when quasi‐reset mode, effectively emulates long‐term weight plasticity. By utilizing crossbar array, multipattern memorization multiply‐and‐accumulate (MAC) operations successfully implemented. Moreover, owing highly linear symmetric multiple conductance states, pattern recognition accuracy ≈96.4% neural network simulation systems.

Language: Английский

Porous crystalline materials for memories and neuromorphic computing systems DOI

Guanglong Ding,

Jiyu Zhao,

Kui Zhou

et al.

Chemical Society Reviews, Journal Year: 2023, Volume and Issue: 52(20), P. 7071 - 7136

Published: Jan. 1, 2023

This review highlights the film preparation methods and application advances in memory neuromorphic electronics of porous crystalline materials, involving MOFs, COFs, HOFs, zeolites.

Language: Английский

Citations

95
A Dual‐Functional Perovskite‐Based Photodetector and Memristor for Visual Memory DOI Open Access
Fa Cao, Zijun Hu, Tingting Yan

et al.

Advanced Materials, Journal Year: 2023, Volume and Issue: 35(44)

Published: July 19, 2023

The imitation of human visual memory demands the multifunctional integration light sensors similar to eyes, and image memory, brain. Although humans have already implemented electronic devices with functions, these require a combination various components logical circuits. However, perception high-performance information storage capabilities into single device achieve remains challenging. In this study, inspired by function dual-functional perovskite-based photodetector (PD) memristor are designed realize capacities. As PD, it realizes an ultrahigh self-powered responsivity 276 mA W-1 , high detectivity 4.7 × 1011 Jones (530 nm; intensities, 2.34 mW cm-2 ), rectification ratio ≈100 (±2 V). memristor, on/off (≈105 ultralow power consumption 3 10-11 W, low setting voltage (0.15 V), long retention time (>7000 s) realized. Moreover, has capacity perceive remember paths store data good cyclic stability. This exhibits perceptual erasable which provides new opportunities for mimicking in future applications.

Language: Английский

Citations

56
Technology and Integration Roadmap for Optoelectronic Memristor DOI Open Access
Jinyong Wang, Nasir Ilyas,

Yujing Ren

et al.

Advanced Materials, Journal Year: 2023, Volume and Issue: 36(9)

Published: Sept. 23, 2023

Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and systems. These OMs possess range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, the ability to replicate crucial neurological functions such vision optical memory. By incorporating large-scale parallel synaptic structures, are anticipated greatly enhance high-performance low-power in-memory computing, effectively overcoming limitations von Neumann bottleneck. However, progress in this field necessitates comprehensive understanding suitable structures techniques integrating low-dimensional materials into integrated circuit platforms. This review aims offer overview fundamental performance, mechanisms, design applications, integration roadmap memristors. establishing connections between materials, multilayer memristor units, monolithic circuits, seeks provide insights emerging technologies future prospects that expected drive innovation widespread adoption near future.

Language: Английский

Citations

51
Moiré synaptic transistor with room-temperature neuromorphic functionality DOI
Xiaodong Yan,

Zhiren Zheng,

Vinod K. Sangwan

et al.

Nature, Journal Year: 2023, Volume and Issue: 624(7992), P. 551 - 556

Published: Dec. 20, 2023

Language: Английский

Citations

49
200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors DOI
Junyoung Kwon, Minsu Seol,

Joungeun Yoo

et al.

Nature Electronics, Journal Year: 2024, Volume and Issue: 7(5), P. 356 - 364

Published: April 24, 2024

Language: Английский

Citations

24
Two-Dimensional Materials for Brain-Inspired Computing Hardware DOI
Shreyash Hadke, Min‐A Kang,

Vinod K. Sangwan

et al.

Chemical Reviews, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 2, 2025

Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security healthcare. However, the current strategy implementing artificial intelligence algorithms using conventional silicon hardware is leading unsustainable energy consumption. Neuromorphic based on electronic devices mimicking biological systems emerging as low-energy alternative, although further progress requires materials that can mimic function while maintaining scalability and speed. As result their diverse unique properties, atomically thin two-dimensional (2D) are promising building blocks for next-generation electronics including nonvolatile memory, in-memory neuromorphic computing, flexible edge-computing systems. Furthermore, 2D achieve biorealistic synaptic neuronal responses extend beyond logic memory Here, we provide comprehensive review growth, fabrication, integration van der Waals heterojunctions optoelectronic devices, circuits, For each case, relationship between physical properties device emphasized followed by critical comparison technologies different applications. We conclude with forward-looking perspective key remaining challenges opportunities applications leverage fundamental heterojunctions.

Language: Английский

Citations

5
2D materials-memristive devices nexus: From status quo to Impending applications DOI Creative Commons
Muhammad Muqeet Rehman, Yarjan Abdul Samad, Jahan Zeb Gul

et al.

Progress in Materials Science, Journal Year: 2025, Volume and Issue: unknown, P. 101471 - 101471

Published: Feb. 1, 2025

Language: Английский

Citations

2
Emerging MXene‐Based Memristors for In‐Memory, Neuromorphic Computing, and Logic Operation DOI

Songtao Ling,

Cheng Zhang, Chunlan Ma

et al.

Advanced Functional Materials, Journal Year: 2022, Volume and Issue: 33(1)

Published: Nov. 14, 2022

Abstract Confronted by the difficulties of von Neumann bottleneck and memory wall, traditional computing systems are gradually inadequate for satisfying demands future data‐intensive applications. Recently, memristors have emerged as promising candidates advanced in‐memory neuromorphic computing, which pave one way breaking through dilemma current architecture. Till now, varieties functional materials been developed constructing high‐performance memristors. Herein, review focuses on emerging 2D MXene materials‐based First, mainstream synthetic strategies characterization methods MXenes introduced. Second, different types MXene‐based memristive their widely adopted switching mechanisms overviewed. Third, recent progress data storage, artificial synapses, logic circuits is comprehensively summarized. Finally, challenges, development trends, perspectives discussed, aiming to provide guidelines preparation novel more engaging information technology

Language: Английский

Citations

70
High-performance van der Waals antiferroelectric CuCrP2S6-based memristors DOI Creative Commons
Yinchang Ma, Yuan Yan, Linqu Luo

et al.

Nature Communications, Journal Year: 2023, Volume and Issue: 14(1)

Published: Nov. 30, 2023

Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, CuInP2S6-based devices suffer from poor thermal stability (<42 °C). Here, exploiting electric field-driven phase transition in rarely studied antiferroelectric CuCrP2S6 crystals, we develop a memristor showing sizable resistive-switching ratio ~ 1000, high switching endurance up to 20,000 cycles, cycle-to-cycle variation, robust 120 °C. The resistive is attributed ferroelectric polarization-modulated emission accompanied by Fowler-Nordheim tunneling across interfaces. First-principles calculations reveal that good device performances associated with exceptionally strong polarization crystal. Furthermore, typical biological synaptic learning rules, long-term potentiation/depression spike amplitude/spike time-dependent plasticity, also demonstrated. results highlight great application potential van der Waals antiferroelectrics high-performance neuromorphic computing.

Language: Английский

Citations

29
Electrical Contacts With 2D Materials: Current Developments and Future Prospects DOI
Saima Batool, Muhammad Idrees, Su‐Ting Han

et al.

Small, Journal Year: 2023, Volume and Issue: 19(12)

Published: Jan. 1, 2023

Abstract Current electrical contact models are occasionally insufficient at the nanoscale owing to wide variations in outcomes between 2D mono and multi‐layered bulk materials that result from their distinctive electrostatics geometries. Contrarily, devices based on semiconductors present a significant challenge due requirement for with resistances close quantum limit. The next generation of low‐power is already hindered by lack high‐quality low‐contact‐resistance contacts materials. physics science resistance materials‐based nanoelectronics, interface configurations, charge injection mechanisms, numerical modeling contacts, as well most pressing issues need be resolved field research development, will all covered this review.

Language: Английский

Citations

25