Liquid–liquid interface‐assisted growth of two‐dimensional organic semiconductor single crystals: Mechanisms, properties, and applications DOI Creative Commons
Jinwen Wang,

Tingyi Yan,

Lingyun Li

et al.

Deleted Journal, Journal Year: 2024, Volume and Issue: 1(2), P. 220 - 241

Published: Aug. 22, 2024

Abstract Two‐dimensional organic semiconductor single crystals (2D OSSCs) represent the promising candidates for construction of high‐performance electronic and optoelectronic devices due to their ultrathin thicknesses, free grain boundaries, long‐range ordered molecular structures. In recent years, substantial efforts have been devoted fabrication large‐sized layer‐controlled 2D OSSCs at liquid‐liquid interface. This unique interface could act as flat defect‐free substrate regulating nucleation growth processes enabling formation OSSCs. Therefore, this review focuses on liquid–liquid interface‐assisted methods controllable preparation OSSCs, with a particular emphasis advantages limitations corresponding methods. Furthermore, typical employed control crystal sizes, morphologies, structures, orientations are discussed in detail. Then, progresses OSSCs‐based devices, such field‐effect transistors, ambipolar phototransistors highlighted. Finally, key challenges further outlook proposed order promote future development field next‐generation devices.

Language: Английский

High Mobility Emissive Excimer Organic Semiconductor Towards Color‐Tunable Light‐Emitting Transistors DOI
Ziyi Xie, Dan Liu, Zhennan Zhao

et al.

Angewandte Chemie International Edition, Journal Year: 2024, Volume and Issue: 63(11)

Published: Jan. 22, 2024

Abstract Organic light‐emitting transistors (OLETs) are highly integrated and minimized optoelectronic devices with significant potential superiority in smart displays optical communications. To realize these various applications, it is urgently needed for color‐tunable emission OLETs, but remains a great challenge as result of the difficulty designing organic semiconductors simultaneously integrating high carrier mobility, strong solid‐state emission, ability tunable colors. Herein, mobility emissive excimer semiconductor, 2,7‐di(2‐anthryl)‐9H‐fluorene (2,7‐DAF) was reasonably designed by introducing rotatable carbon–carbon single bond connecting two anthracene groups at 2,7‐sites fluorene, small torsion angles guarantee effective conjugation suppress fluorescence quenching. Indeed, unique stable dimer arrangement herringbone packing mode 2,7‐DAF crystal enables its superior properties 2.16 cm 2 ⋅ V −1 s , absolute photoluminescence quantum yield (PLQY) 47.4 %. Furthermore, voltage‐dependent electrically induced from orange to blue also demonstrated an individual based OLETs first time. This work opens door new class semiconductors, provides good platform study OLETs.

Language: Английский

Citations

22
Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films DOI
Jung Woo Cho, Myeong Seop Song, In Hyeok Choi

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(24)

Published: Feb. 8, 2024

Abstract The groundbreaking discovery of unconventional ferroelectricity in HfO 2 opens exciting prospects for next‐generation memory devices. However, the practical implementation, particularly its epitaxial stabilization and a clearer understanding intrinsic has been significant challenge. study arouses potential importance atomic layer deposition (ALD) mass production modern industries, demonstrating proficiency achieving growth ferroelectric Hf 0.5 Zr O (HZO) thin films on Yttria‐stabilized zirconia (YSZ) substrates. Moreover, with distinct switching currents, work reveals characteristics HZO deposited through ALD YSZ‐buffered Si substrates, which aligns well CMOS technology. Overall, results pave way scalable synthesis system ‐based materials, hinting at bright future low‐temperature nanoelectronics.

Language: Английский

Citations

9
Breaking the mobility–stability dichotomy in organic semiconductors through adaptive surface doping DOI Creative Commons

Z. Wang,

Xianshuo Wu,

Siyuan Zhang

et al.

Proceedings of the National Academy of Sciences, Journal Year: 2025, Volume and Issue: 122(14)

Published: April 3, 2025

Organic semiconductors (OSCs) are pivotal for next-generation flexible electronics but limited by an intrinsic trade-off between mobility and stability. We introduce adaptive surface doping (ASD), innovative strategy to overcome this dichotomy in OSCs. ASD's mechanism accommodates a broad range of dopant concentrations, optimally passivating trap states as needed. This approach significantly lowers the energy level from 84 meV 14 above valence band edge, promoting transition hopping band-like transport mechanisms. ASD boosts carrier over 60%, reaching up 30.7 cm 2 V −1 s , while extending extrapolated operational lifetime treated devices beyond 57.5 y. breakthrough sets standard organic electronics, positioning powerful method simultaneously enhancing performance stability OSC devices.

Language: Английский

Citations

1
Advances in Single‐Crystal Films: Synergistic Insights from Perovskites and Organic Molecules for High‐Performance Optoelectronics DOI

Fengmin Guo,

Xiaodong Yang,

P.F. Wang

et al.

Small, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 24, 2025

Abstract Semiconductor single‐crystal thin films are crucial for the advancement of high‐performance optoelectronic devices. Despite significant progress in fabricating perovskite and organic films, interdisciplinary insights between these domains remain unexplored. This review aims to bridge this gap by summarizing recent advances fabrication strategies molecular films. Five preparation methods—solution‐phase epitaxy, solid‐phase meniscus‐induced crystallization, antisolvent‐induced space‐confined growth—are analyzed with a focus on their principles, functional properties, distinct advantages. By comparing approaches across material systems, identifies transferable that can drive development large‐scale, high‐quality Furthermore, applications explored, including solar cells, photodetectors, light‐emitting devices, transistors, while addressing challenges such as scalability, defect control, integration. work highlights importance cross‐disciplinary innovation provides an effective pathway integrating processing advance next generation film technologies.

Language: Английский

Citations

0
Anchored epitaxial growth of single-oriented one-dimensional organic nanowires towards their integration into field-effect transistors and polarization-sensitive photodetector arrays DOI Creative Commons

Phetluengxay Keo,

Tingyi Yan,

Jinwen Wang

et al.

RSC Advances, Journal Year: 2025, Volume and Issue: 15(13), P. 9891 - 9898

Published: Jan. 1, 2025

The anchored epitaxial growth method is developed to facilitate the single-oriented of 1D organic nanowires using parallel nanogrooves on annealed sapphire as anchoring seed crystal templates.

Language: Английский

Citations

0
Low‐Dimensional Organic Semiconductor Single‐Crystal Heterojunctions for Next‐Generation Optoelectronic Devices DOI
Yuhan Du, Qisheng Sun,

Yiwen Ren

et al.

Advanced Materials Technologies, Journal Year: 2025, Volume and Issue: unknown

Published: April 18, 2025

Abstract Organic semiconductor single‐crystal heterojunctions (OSSCHs) are engineered by integrating complementary organic crystals to enable ambipolar transport and multifunctional device performance. This review outlines recent progress in the crystal growth, interface physics, applications of OSSCHs, with an emphasis on low‐dimensional structures achieved through controlled crystallization advanced engineering. Innovations control, such as integrated self‐assembly van der Waals epitaxy, have enabled construction defect‐minimized heterointerfaces molecular‐level precision. Emerging strategies engineering, including vertically stacked heterostructures ultrathin 2D molecular crystals, optimized carrier dynamics while introducing unique optoelectronic properties. The band alignment at critically governs exciton dissociation efficiency charge pathways, directly enhancing performance photovoltaics light‐emitting systems. These demonstrate promising across transistors, devices, neuromorphic electronics overcoming inherent limitations unipolar active layers. also highlights current challenges future research directions, emphasizing role OSSCHs advancing fields materials science

Language: Английский

Citations

0
High‐Performance Field‐Effect Transistors and Phototransistors Array Based on Solution‐Processed Quasi‐1D Van der Waals Ta2Pd3S8 Crystals DOI Creative Commons
Kyung Hwan Choi,

Bom Lee,

Jinsu Kang

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 7, 2025

Abstract Quasi‐1D van der Waals (vdW) materials, particularly the M 2 N 3 X 8 family, have emerged as promising candidates for nanoelectronic platforms due to their excellent carrier transport properties and structural diversity. Among these, Ta Pd S , a theoretically proposed member, has remained unexplored. In this study, is successfully synthesized first time optimize its exfoliation into nanowires through liquid phase exfoliation, achieving scalable production using cascade centrifugation technique. Two types of field‐effect transistors (FET) devices are fabricated: single nanowire network structure arrays. The FETs demonstrate high mobility up 27.3 cm V −1 s with an I on / off 4.31 × 10 4 while exhibit uniform performance across 5 Furthermore, optoelectronic characterization reveals photodetection capabilities, including responsivity 322.40 A W 1.85 mA structures. These results highlight potential versatile material low‐dimensional electronic applications, paving way integration next‐generation multifunctional devices.

Language: Английский

Citations

0
High Mobility Emissive Excimer Organic Semiconductor Towards Color‐Tunable Light‐Emitting Transistors DOI
Ziyi Xie, Dan Liu, Zhennan Zhao

et al.

Angewandte Chemie, Journal Year: 2024, Volume and Issue: 136(11)

Published: Jan. 22, 2024

Abstract Organic light‐emitting transistors (OLETs) are highly integrated and minimized optoelectronic devices with significant potential superiority in smart displays optical communications. To realize these various applications, it is urgently needed for color‐tunable emission OLETs, but remains a great challenge as result of the difficulty designing organic semiconductors simultaneously integrating high carrier mobility, strong solid‐state emission, ability tunable colors. Herein, mobility emissive excimer semiconductor, 2,7‐di(2‐anthryl)‐9H‐fluorene (2,7‐DAF) was reasonably designed by introducing rotatable carbon–carbon single bond connecting two anthracene groups at 2,7‐sites fluorene, small torsion angles guarantee effective conjugation suppress fluorescence quenching. Indeed, unique stable dimer arrangement herringbone packing mode 2,7‐DAF crystal enables its superior properties 2.16 cm 2 ⋅ V −1 s , absolute photoluminescence quantum yield (PLQY) 47.4 %. Furthermore, voltage‐dependent electrically induced from orange to blue also demonstrated an individual based OLETs first time. This work opens door new class semiconductors, provides good platform study OLETs.

Language: Английский

Citations

2
A Dry-Transfer Method for Molecular Monolayer Crystals toward Flexible High-Performance Organic Field-Effect Transistors DOI
Xinru Wang, Sicheng Li,

Qiuyue Sheng

et al.

ACS Materials Letters, Journal Year: 2024, Volume and Issue: 6(9), P. 4240 - 4247

Published: Aug. 19, 2024

The single crystals of organic semiconductor (SC-OSCs) have displayed great potential in field-effect transistors (OFETs), given the high mobility brought by long-range ordering and absence structural defects SC-OSCs. Benefiting from their intrinsic flexibility thinnest possible thickness, molecular monolayer (MMCs) are considered to be one optimum candidates as active layer flexible OFETs. In this work, a new dry-transfer method via an situ vapor-deposited parylene film on MMCs was developed for fabricating transferred retained atomically flat surface exhibited conformal residue-free interface with dielectric layer, thereby giving average 13.23 cm2 V–1 s–1 Therefore, presented offers opportunity overcome trade-off between performance good mechanical

Language: Английский

Citations

1
Spin‐coating fabrication of high‐yield and uniform organic thin‐film transistors via a primer template growth DOI Creative Commons
Zhenxin Yang, J. Su,

Junzhan Wang

et al.

Aggregate, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 3, 2024

Abstract Solution coating of organic semiconductors offers great potential for achieving low‐cost and high‐throughput manufacturing large‐area flexible electronics. However, the solution processability semiconducting small molecules fabricating uniform reliable thin‐film devices poses challenges due to low viscosities small‐molecule solutions. Here, we report a universal approach employing primer template (PT) enhance spreadability solutions on silicon wafers, enabling spin‐coating fabrication thin films composed millimeter‐scale grains with complete coverage well‐ordered molecular packing. Using PT, fabricated transistors (OTFTs) using containing various such as rubrene 2‐decyl‐7‐phenyl‐[1]benzothieno[3,2‐b][1]benzothiophene. The device yield all OTFTs is consistently 100% while high average mobility 1.62 cm 2 V −1 s device‐to‐device variation 7.7% measured in ambient air condition. In addition, utilization PT resulted batch‐to‐batch 12.5% performance over dozens OTFT devices. key industrial metrics, yield, reproducibility, uniformity OTFTs, are among best techniques.

Language: Английский

Citations

1