Two-Dimensional Materials for Brain-Inspired Computing Hardware

Chemical Reviews, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 2, 2025

Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security healthcare. However, the current strategy implementing artificial intelligence algorithms using conventional silicon hardware is leading unsustainable energy consumption. Neuromorphic based on electronic devices mimicking biological systems emerging as low-energy alternative, although further progress requires materials that can mimic function while maintaining scalability and speed. As result their diverse unique properties, atomically thin two-dimensional (2D) are promising building blocks for next-generation electronics including nonvolatile memory, in-memory neuromorphic computing, flexible edge-computing systems. Furthermore, 2D achieve biorealistic synaptic neuronal responses extend beyond logic memory Here, we provide comprehensive review growth, fabrication, integration van der Waals heterojunctions optoelectronic devices, circuits, For each case, relationship between physical properties device emphasized followed by critical comparison technologies different applications. We conclude with forward-looking perspective key remaining challenges opportunities applications leverage fundamental heterojunctions.

Language: Английский

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2D Van der Waals Sliding Ferroelectrics Toward Novel Electronic Devices

Small, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 21, 2025

Abstract Ferroelectric materials, celebrated for their switchable polarization, have undergone significant evolution since early discovery in Rochelle salt. Initial challenges, including water solubility and brittleness, are overcome with the development of perovskite ferroelectrics, which enable creation stable, high‐quality thin films suitable semiconductor applications. As demand miniaturization nanoelectronics has increased, research shifted toward low‐dimensional materials. Traditional ferroelectrics often lose properties at nanoscale; however, 2D van der Waals (vdW) CuInP 2 S 6 α‐In Se 3 , emerged as promising alternatives. The recent sliding ferroelectricity, where polarization is linked to polar stacking configuration originally non‐polar monolayers, significantly broadened scope ferroelectrics. This review offers a comprehensive examination orders vdW stacking‐order‐linked ferroelectric structures, manifestations metallic, insulating semiconducting Additionally, it explores applications discusses future prospects nanotechnology.

Language: Английский

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A Scanning Microwave Impedance Microscopy Study of α‐In₂Se₃ Ferroelectric Semiconductor

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(28)

Published: March 13, 2024

Abstract Van der Waals ferroelectric semiconductors, which encompass both ferroelectricity and semiconductivity, have garnered intensive research interests for developing novel non‐volatile functional devices. Previous studies focus on characterization device demonstration, with little attention paid to the fundamental electronic properties of these materials their structures, are essential design optimization. In this study, scanning microwave impedance microscopy (sMIM) is utilized investigate semiconductor α‐phase indium selenide (α‐In 2 Se 3 ) its synaptic field effect transistors. α‐In nanoflakes varying thicknesses visualized through capacitive signal detection, whose responses consistent finite element simulations manifesting dependence flake thickness property. sMIM spectroscopy performed ‐based metal‐oxide‐semiconductor (MOS) structures reveals typical MOS capacitance‐voltage characteristics, additional hysteresis arising from switching . The local conductance state changes transistors (FeSFET) in response gate voltage stimuli effectively detected by situ sMIM, good agreement electrical transport properties. This work deepens understanding physics toward practical application.

Language: Английский

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Pressure-induced ferroelectric and electronic transitions in two-dimensional ferroelectric semiconductor of NbOCl2 up to 41.7 GPa

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 124(11)

Published: March 11, 2024

NbOCl2, a representative van der Waals ferroelectric (FE) semiconductor, has become the research frontier due to its peculiar appeal in both fundamental studies and potential applications. In present work, high-pressure structural, vibrational, electrical transport properties of NbOCl2 under different hydrostatic environments were systematically investigated over wide pressure range 1.7–41.7 GPa using diamond anvil cell coupled with situ Raman spectroscopy, conductivity, high-resolution transmission electron microscopy (HRTEM) observations. Upon non-hydrostatic compression, underwent FE-to-antiferroelectric phase transition at 3.4 GPa, followed by semiconductor-to-metal transformation 15.7 GPa. Under FE metallization postponed ∼2.0 ∼4.0 effect helium pressure-transmitting medium. decompression, was demonstrated be reversible environments, which well corroborated HRTEM analyses. addition, linear relations between current sinusoidal voltage nonlinearity factors ∼1.0 reflect Ohmic response before after transition. Our findings on provide guideline for exploring other layered materials high establishing design paradigm new generations FE-based devices.

Language: Английский

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Ferroelectricity‐Tuned Band Topology and Superconductivity in 2D Materials and Related Heterostructures

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(48)

Published: Aug. 19, 2024

Abstract Ferroelectricity, band topology, and superconductivity are respectively local, global, macroscopic properties of quantum materials, understanding their mutual couplings offers unique opportunities for exploring rich physics enhanced functionalities. In this mini‐review, the attempt is to highlight some latest advances in vibrant area, focusing particular on ferroelectricity‐tuned topology 2D materials related heterostructures. First, results from predictive studies delicate between ferroelectricity or based first‐principles calculations phenomenological modeling presented, with ferroelectricity‐enabled topological as an appealing objective. Next, experimental different van der Waals heterostructures covered. Finally, perspectives, schemes outlined that may allow materialize new types systems simultaneously harbor superconductivity, lead ferroelectric superconducting devices such diodes.

Language: Английский

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Emerging Multifunctionality in 2D Ferroelectrics: A Theoretical Review of the Interplay With Magnetics, Valleytronics, Mechanics, and Optics

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(51)

Published: Aug. 28, 2024

Abstract 2D ferroelectric materials present promising applications in information storage, sensor technology, and optoelectronics through their coupling with magnetics/valleytronics, mechanics, optics, respectively. The integration of ferroelectrics magnetism enhances data storage density memory devices by enabling electric‐field‐controlled magnetic states. Ferroelectric‐valley holds promise for high‐speed, low‐energy electronics leveraging the electrical control valley polarization. Ferroelectric‐strain results various polar topologies, potential high‐density technologies devices. Moreover, between optics facilitates development nonlinear photonics based on materials. This review summarizes latest theoretical progress mechanisms, including Dzyaloshinskii‐Moriya‐interaction‐induced magnetoelectric coupling, symmetry‐linked ferroelectric‐valley ferroelectric‐strain‐coupling‐generated second‐harmonic generation ferroelectric‐light interactions. current challenges future opportunities harnessing multifunctional are provided.

Language: Английский

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Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe₃/MoS₂

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(25), P. 32334 - 32343

Published: June 11, 2024

Transition metal thiophosphates (MTPs) are a group of emerging van der Waals materials with widely tunable band gaps. In the MTP family, CdPSe

Language: Английский

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Intrinsic Out‐Of‐Plane and In‐Plane Ferroelectricity in 2D AgCrS₂ with High Curie Temperature

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 6, 2024

2D ferroelectric materials have attracted extensive research interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics. However, the available are scarce most of them limited by uncontrollable preparation. Herein, a novel material AgCrS

Language: Английский

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Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(1)

Published: Jan. 6, 2025

To develop low-power, miniature, nonvolatile memory resistor integrated devices for in-memory computing technologies, the exploration of atomic-scale ferroelectric channel semiconductor is necessary. We theoretically designed tunnel junction based on two-dimensional semiconductors, with metal TaSe2 used as top electrode and van der Waals bilayer boron arsenide (BAs) channel, aiming to achieve high-performance, resistors. Our findings demonstrate that BAs, upon contact electrodes, can two stable switchable states. Interlayer relative sliding enables alternating domains, altering types triple potential barriers at interfaces from Schottky contacts Ohmic contacts. Thus, under modulation “triple barrier” mechanism, control over carrier switching achieved, resulting in a tunneling electroresistance 104%. Additionally, non-equilibrium Green's function results indicate nonlinear changes I–V curve when between states, highlighting multi-resistive state nature resistance. research underscores junctions integrating storage units, emphasizing their innovative applications technologies.

Language: Английский

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In-Plane Bulk Photovoltaic Effect in a MoSe₂/NbOI₂ Heterojunction for Efficient Polarization-Sensitive Self-Powered Photodetection

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 15, 2025

Two-dimensional ferroelectric materials can generate a bulk photovoltaic effect, making them highly promising for self-powered photodetectors. However, their practical application is limited by weak photoresponse due to transition strength and wide band gap. In this study, we construct van der Waals heterojunction using NbOI2, which has significant in-plane polarization, with absorbing MoSe2 layer. We observe ultrafast hole transfer from NbOI2 within 0.4 ps electron in the opposite direction 3.8 ps, facilitating efficient charge dissociation extraction. Applying direct current electric field poling modulates domains enhancing effect. This results one of highest responsivities photodetectors (101.3 mA/W) at 0 V bias alongside excellent polarization sensitivity (∼7.58). work advances understanding self-powering mechanisms via effect proposes new strategies future devices.

Language: Английский

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