Ta₂PdS₆/MoS₂ Heterojunction Phototransistor for High-Performance Photoelectric Synapses and Graphic Identification

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: March 18, 2025

Artificial synapses and neurons with efficient, high-speed, highly parallel information processing capabilities are considered to be a new direction for the next generation of learning, cognition, data storage. In this work, we have integrated photodetectors photoelectric synapse in Ta2PdS6/MoS2 van der Waals heterostructures, which can used photodetection optical artificial neural networks. We systematically studied characteristics blue-violet near-infrared (405 ∼ 1550 nm) band. At 633 nm, responsivity specific detectivity as high 590.36 AW-1 5.63 × 1011 Jones, respectively. addition, heterojunction acquired persistent photoconductivity behavior due presence interfacial defect states, was simulate synaptic properties human brain, such transition from short-term memory long-term memory, paired-pulse facilitation, "learning-forgetting-relearning" behavior, excitatory-postsynaptic current. on basis synapse, recognition handwritten digits different noise levels by an network simulated, shows training accuracy (90%). This study lays foundation development high-performance heterojunctions using two-dimensional materials.

Language: Английский

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Phase-Engineered In₂Se₃ Ferroelectric P-N Junctions in Phototransistors for Ultra-Low Power and Multiscale Reservoir Computing

ACS Nano, Journal Year: 2025, Volume and Issue: unknown

Published: March 26, 2025

Two-dimensional (2D) ferroelectric field-effect transistors (Fe-FETs) based on p–n junctions are the basic units of future neuromorphic hardware. The In2Se3 semiconductor with ferroelectric, photoelectric, and phase transition properties possesses great application potential for in-sensor computing, but its junction (FePNJ) is not well investigated. Here, we present an optoelectronic synapse made uniformly full-coverage α-In2Se3/WSe2 FePNJ, achieving ultralow-power classification recognition multiscale signal processing. Using chemical vapor deposition (CVD), can obtain β′-In2Se3/WSe2 subferroelectric by direct growth SiO2/Si substrate FePNJ transition. Modulated synergistic effect polarization electric field built-in field, exhibits significantly enhanced highly tunable synaptic effects (memory retention >2500 s >8 multilevel current states under single optical/electrical pulses), along power consumption down to atto-joule levels. Utilizing these photoelectric properties, constructed all-ferroelectric reservoir computing system, comprising both readout networks, handwritten digit recognition. We also created a system through gate-voltage-modulated relaxation time scale which efficiently detect motions in 1 100 km h–1 speed range.

Language: Английский

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Identification of Negative Capacitance in Ferroelectric in FET Devices

Published: April 11, 2025

Language: Английский

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Ferroelectric control of diverse hyperbolic polaritons in the visible spectrum

Published: April 24, 2025

Low-dimensional van der Waals materials have attracted tremendous attention due to their exceptional physical, chemical, and mechanical properties, particularly strong anisotropy in structural, electronic, optical behaviors. Herein, we comprehensively studied diverse hyperbolic polaritons quasi-one-dimensional ferroelectric material WOBr4, including propagation patterns frequencies, most notably, the electric-field strain-driven elliptic-to-hyperbolic topological transition. Under moderate uniaxial strain or electric field, absorption along chain direction displays a threefold modulation intensity an approximately 1 eV frequency shift, while showing minor variation perpendicular chain. The pronounced tunability of anisotropic is achieved through regulation 1D polarization by external stimuli, which controls symmetry breaking atomic orbitals involved transitions. We propose WOBr4 as versatile platform for control polaritons, offering potential advanced applications photovoltaics, optoelectronics nanophotonics.

Language: Английский

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Relaxor Antiferroelectric Dynamics for Neuromorphic Computing

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 24, 2025

Abstract Relaxor antiferroelectric (AFE) materials display a gradual polarization response and high energy storage density with slowly reverting after removing an external field. This distinctive polarization‐switching behavior closely resembles synaptic plasticity in biological nervous systems, presenting substantial potential for neuromorphic computing applications. Especially, its 2D scenario exhibits unique physical properties maintains stability at atomic thickness due to their antipolar alignment, which effectively eliminates the depolarization field effect. Such stable relaxor AFE offer significant advantages integrating these into modern electronic devices computing. In this study, of novel quaternary layered material, CuBiP₂Se₆ (CBPS), is explored device CBPS broad range light absorption behavior, rendering it outstanding candidate optoelectronic devices. High‐quality synthesized through various characterization techniques are verified. CBPS‐based demonstrate dual‐mode tunable resistance stimulated by both electrical optical inputs, demonstrating capacity perform in‐sensor image restoration tasks. These findings suggest that like could provide robust platform brain‐inspired applications, particularly computing, artificial visual systems.

Language: Английский

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