Chinese Physics B,
Journal Year:
2024,
Volume and Issue:
33(6), P. 068101 - 068101
Published: March 22, 2024
Perpendicular
optical
reversal
of
the
linear
dichroism
transition
has
promising
applications
in
polarization-sensitive
optoelectronic
devices.
We
perform
a
systematical
study
on
in-plane
anisotropy
quasi-one-dimensional
PdBr
2
by
using
combined
measurements
angle-resolved
polarized
Raman
spectroscopy
(ARPRS)
and
anisotropic
absorption
spectrum.
The
analyses
ARPRS
data
validate
properties
flake.
And
spectrum
nanoflake
demonstrates
distinct
reversal.
Photodetector
constructed
nanowire
exhibits
high
responsivity
747
A⋅W
−1
specific
detectivity
5.8
×
10
12
Jones.
photodetector
prominent
photoresponsivity
under
405-nm
light
irradiation
with
large
photocurrent
ratio
1.56,
which
is
superior
to
those
most
previously
reported
counterparts.
Our
offers
fundamental
insights
into
strong
exhibited
,
establishing
it
as
candidate
for
miniaturization
integration
trends
polarization-related
applications.
Advanced Functional Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Nov. 4, 2024
Abstract
Due
to
the
outstanding
physical
properties
and
integrated
characteristics,
such
as
gapless
band
structure,
high
state
density,
conductivity,
dangling‐bond‐free
surface,
tunable
Fermi
level,
two‐dimensional
layered
topological
semimetals
(2D
LTSMs)
exhibit
a
promising
application
prospect
for
including
electrode
contact
terahertz
detection.
Despite
surging
in
attention,
comprehensive
strategy
is
still
crucial
meet
necessary
conditions
practical
of
2D
LTSMs.
According
fermion
types
structures,
LTSMs
can
be
divided
into
Dirac
semimetals,
Weyl
nodal‐line
semimetals.
This
review
comprehensively
encapsulates
intrinsic
properties,
typical
synthesis
methods,
applications
electronics
optoelectronics
about
these
To
establish
fundamental
theory,
crystal
different
are
summarized
at
first.
The
effective
strategies
exfoliation,
molecular
beam
epitaxy,
vapor
deposition
analyzed
systematically.
Finally,
article
emphasizes
exploration
applications,
significant
challenges,
development
directions
LTSMs,
which
will
drive
become
promisingly
leading
technology
next‐generation
electronic
optoelectronic
systems.
Advanced Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 27, 2025
Abstract
The
exchange
bias
(EB)
effect
is
a
fundamental
magnetic
phenomenon,
in
which
the
field/coercive
field
ratio
(|H
EB
/H
C
|)
can
improve
stability
of
spintronic
devices.
Two‐dimensional
(2D)
heterostructures
have
potential
to
construct
low‐power
and
high‐density
devices,
while
their
typically
air
unstable
|H
|
lesser,
limiting
possibility
applications.
Here,
2D
Cr
5
Te
6
nanosheets
been
systematically
synthesized
with
an
situ
formed
≈2
nm‐thick
doped
2
O
3
layer
(Te‐Cr
)
on
upper
surface
by
chemical
vapor
deposition
(CVD)
method.
strong
stable
effect,
achieving
up
80%
under
ultralow
cooling
0.01
T,
greater
than
that
reported
heterostructures.
Meanwhile,
uniformity
thickness
composition
Te‐Cr
be
controlled
growth
conditions
are
highly
correlated
/Cr
First‐principles
calculations
show
provide
uncompensated
spins
,
thus
forming
spin
pinning
effect.
systematical
investigation
high
will
open
exciting
opportunities
high‐stability
Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Feb. 2, 2025
Abstract
Polarimetric
photodetectors
hold
significant
promise
in
optical
communication
and
polarization
imaging
applications
due
to
their
additional
ability
detect
states
of
light.
The
strategy
multiple
modulation
plays
a
crucial
role
performance
optimization
multi‐valued
logic
output,
enabling
higher
information
transmission
density
clearer
recognition.
Following
this
context,
Ta
2
PdSe
6
/MoTe
semimetal/semiconductor
heterojunction‐based
polarimetric
photodetector
with
multi‐control
that
can
enable
the
encoding
high‐contrast
is
developed.
As
dual‐electrically
controlled
states,
gate
bias
voltages
significantly
modulate
metrics.
result,
device
be
configured
tunable
detectivity
from
3.6
×
10
2.19
12
Jones
ratios
3.8
8.14
under
808
nm
illumination.
By
further
combining
dual‐optically
control
(light
intensity
angle),
achieves
four
thus
realizing
efficiency
density.
Leveraging
these
system
capable
operating
at
different
angles
also
realized,
an
enhanced
degree
linear
0.51
0.8,
allowing
better
differentiation
object
features
states.
This
work
demonstrates
showing
promising
potential
high‐density
high‐resolution
applications.
The
development
of
polarization
photodetectors
utilizing
two-dimensional
materials
holds
significant
promise
due
to
their
distinctive
properties
and
potential
for
high
integration.
However,
a
major
limitation
most
current
is
lack
tuning
capability,
which
restricts
the
versatility
individual
devices.
In
this
study,
nonvolatile
ferroelectric
tunable
photodetector
explored
based
on
2H
α-In2Se3.
semiconductor
field-effect
transistor
(FeS-FET)
α-In2Se3
were
fabricated,
demonstrating
an
on/off
ratio
103.
Ferroelectric
modulation
photoelectric
response
was
under
650
nm
illumination,
device
achieves
maximum
optical
responsivity
75
A/W,
with
detectivity
1.46
×
1010
jones.
Notably,
in
context
polarized
light
detection,
device's
sensitivity
experiences
switching.
dichroic
ratios
can
be
tuned
1.74
3
down
up
states,
respectively.
Moreover,
by
adjusting
degree
switching,
linearly
tuned.
state
continuously
enhance
range
2.71-3.11,
while
weaken
2.54-2.06.
This
research
not
only
advances
understanding
detection
but
also
introduces
approach
detection.
Two-dimensional
(2D)
materials
show
great
potential
in
creating
high-performance
ultracompact
photodetectors.
Existing
2D
photodetectors
are
usually
designed
based
on
a
photogating
effect
or
photovoltaic
effect.
However,
achieving
balance
between
photodetectivity
and
photoresponsivity
presents
significant
challenge
due
to
increased
dark
currents
at
trap
level
recombination
the
lack
of
gain
mechanism.
Herein,
we
rationally
design
gate-tunable
junction
field-effect
transistor
photodetector
MoSe2
WSe2.
With
proper
modulating
depletion
layer
Schottky
barrier
using
source-drain
gate
bias,
device
can
effectively
reduce
current,
resulting
an
ultrahigh
1.55
×
1013
Jones
optical
switching
ratio
104.
Furthermore,
our
exhibits
high
476
A/W
ultrafast
response
time
50
μs
under
635
nm
laser
irradiation
with
extended
detection
capability
1550
band.
These
outstanding
performances
highlight
heterojunctions
addressing
growing
demands
next-generation
photonic
sensors.
ACS Nano,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Dec. 7, 2024
Photovoltaic
devices
capable
of
reversible
photovoltaic
polarity
through
external
signal
modulation
may
enable
multifunctional
optoelectronic
systems.
However,
such
are
limited
to
those
induced
by
gate
voltage,
electrical
poling,
or
optical
wavelength
using
complicated
device
architectures.
Here,
we
show
that
the
is
also
switchable
with
intensity
incident
light.
The
in
light
induces
switching
geometrically
asymmetric
MoS2
Schottky
photodiodes,
explained
lowering
barrier
heights
due
trapping
photogenerated
holes
at
MoS2/Cr
interface
states.
An
applied
voltage
can
further
modulate
carrier
concentration
channel,
providing
a
method
tune
threshold
switching.
Finally,
bidirectional
logic
"AND"
and
"OR"
functions
was
demonstrated
within
single
device.
Advanced Optical Materials,
Journal Year:
2024,
Volume and Issue:
12(31)
Published: Aug. 9, 2024
Abstract
Polarization‐sensitive
photodetectors
have
garnered
significant
interest
due
to
their
promising
applications
in
navigation,
remote
sensing,
and
optical
communication.
However,
conventional
polarized
light
detectors
relying
on
filters
face
challenges
intricate
fabrication
calibration
procedures.
While
structures
based
in‐plane
anisotropic
2D
materials
the
potential
offer
viable
solutions
for
polarization
detection,
achieving
both
low
power
consumption
high
performance
remains
challenging.
Herein,
a
self‐powered
anisotropic/isotropic
ReS
2
/SnSe
van
der
Waals
(vdWs)
heterojunction
detector
with
high‐performance
features
is
constructed.
This
device
exhibits
outstanding
photovoltaic
(PV)
across
wide
spectral
range
from
405
850
nm
without
bias,
featuring
excellent
responsivity
(0.966
A
W
−1
)
specific
detectivity
(1.47
×
10
Jones)
under
650
laser
illumination.
Moreover,
benefiting
built‐in
electric
field
that
promotes
carrier
separation
extremely
dark
current,
shows
fast
response
time
(230/240
µs)
an
on/off
ratio
of
up
4
.
Furthermore,
photodetector
demonstrates
exceptional
encoding
performance,
1.56
illumination,
opening
new
possibilities
communication
technology
development.
research
provides
novel
option
developing
energy‐efficient
polarization‐sensitive
detectors.
