Japanese Journal of Applied Physics,
Journal Year:
2024,
Volume and Issue:
63(10), P. 107001 - 107001
Published: Oct. 1, 2024
Abstract
This
study
delves
into
the
performance
and
stability
of
quantum-dot
light-emitting
diodes
(QLEDs),
with
a
specific
focus
on
initial
variations
in
device
properties
effectiveness
various
stabilization
strategies.
We
assess
impact
bias
conditions,
reverse
treatment,
thermal
annealing
zinc
oxide
electron
transport
layer
(ZnO
transporting
layer),
effects
shelf
storage
reliability
efficiency.
Our
findings
reveal
that
QLEDs
are
highly
sensitive
to
yet
this
sensitivity
can
be
significantly
reduced
through
strategic
interventions
such
as
applications.
These
treatments
shown
markedly
enhance
operational
devices.
By
providing
deep
insights
mechanisms
behind
QLED
properties,
our
research
outlines
practical
measures
for
improving
their
reliability,
profound
implications
advancement
high-performance
display
technologies.
Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Feb. 24, 2025
Abstract
As
one
of
the
most
promising
next‐generation
display
technologies,
quantum
dot
light‐emitting
diodes
(QLEDs)
possess
various
advantages,
such
as
high
color
purity,
wide
gamut,
brightness,
and
solution
processability.
The
preparation
(QD)
pixels
is
essential
for
commercializing
QLED
displays,
direct
photolithography
considered
an
efficient
method
fabricating
ultra‐high‐resolution
devices
over
large
areas.
However,
QD
technology
still
in
its
infancy.
This
study
presents
a
novel
technique
based
on
typical
azide‐alkyne
click
reaction.
enables
cross‐linking
adjacent
QDs
air
environment
using
365
nm
UV
light
source,
low‐energy
dose
(≈36
mJ
cm
−2
).
In
addition,
QLEDs
with
crosslinked
layers
exhibit
excellent
performance,
achieving
peak
external
efficiency
(EQE)
20.05%
maximum
brightness
166,000
cd
m
at
5
V.
Meanwhile,
pristine
photolithographic
comparable
operational
lifetime
(T
95
It
believed
that
reaction
will
advance
development
patterned
facilitate
industrial
production
ultra‐high
resolution
displays.
Nano Letters,
Journal Year:
2025,
Volume and Issue:
unknown
Published: March 17, 2025
Quantum
dots
(QDs)
are
vital
for
virtual
reality
and
augmented
displays
due
to
their
tunable
optical
properties.
Although
QD
color
converters
enable
blue
light-emitting
diode
down-conversion
green/red,
efficiency
stability
issues
hinder
high-end
display
applications.
Here,
we
employ
a
cross-linking-assisted
hierarchical
confined
assembly
method
fabricate
red,
green,
arrays.
Specifically,
micropillar
templates
with
asymmetric
wettability
used
sequentially
deposit
green
red
microwire
arrays
in
mutually
orthogonal
directions
on
film,
forming
RGB
4,4′-Bis(3-vinyl-9H-carbazol-9-yl)1,1′-biphenyl
(CBP-V)
is
introduced
into
QDs
solve
the
problem
of
crosstalk.
Full-color
pixel
resolutions
1814–2117
pixels
per
inch
(PPI)
successfully
fabricated.
Upon
integration
devices,
adjustable
emission
from
cool
white
light
warm
observed,
peak
external
quantum
(EQE)
16.14%
luminance
226
054
cd
m–2.
Abstract
Quantum
dot
light‐emitting
diodes
(QLEDs)
have
emerged
as
a
promising
next‐generation
technology
for
display
and
lighting
applications
due
to
their
outstanding
color
performance.
However,
despite
considerable
progress,
blue
QLEDs,
especially
those
based
on
nonheavy
metal
materials,
continue
face
significant
challenges
in
efficiency
stability,
falling
behind
red
green
counterparts.
Herein,
new
strategy
is
presented
enhance
the
performance
of
ZnSeTe‐based
QLEDs
by
introducing
SnO
2
nanoparticles
(NPs)
prepared
via
freeze‐drying
conductive
interlayer
between
quantum
(QD)
layer
ZnO
electron
transport
(ETL).
This
approach
improves
dispersion
NPs,
reduces
film
surface
roughness,
effectively
suppresses
device
leakage
currents.
Furthermore,
process
minimizes
oxygen
vacancies
exciton
quenching
at
QD/ETL
interface.
As
result,
utilizing
freeze‐dried
NP
achieve
maximum
external
(EQE)
20.8%,
peak
brightness
6017
cd
m
−2
,
T
50
operational
lifetime
130.7
h
100
.
These
findings
represent
improvement
stability
environmentally
friendly
provide
valuable
insights
advancing
QLED
technology.
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Dec. 20, 2024
Abstract
It
is
known
that
large‐scale
synthesis
of
emitters
affords
colloidal
quantum
dot
(CQD)
materials
with
a
great
opportunity
toward
the
mass
production
light‐emitting
diodes
(QLEDs)
based
commercial
electronic
products.
Herein,
an
unprecedented
example
scalable
CQD
(>
0.5
kilogram)
achieved
by
using
core/shell
structure
CdZnSe/ZnSeS/CdZnS,
in
which
CdZnSe,
ZnSeS,
and
CdZnS
alloys
are
used
as
inner
core,
transition
layer
outermost
shell,
respectively.
exhibits
high
fluorescence
yield
(>90%),
robust
excited
state,
fast
radiative
rate.
The
investigation
morphology
surface
state
reveals
possible
reasons
for
such
excellent
optical
properties,
include
uniform
size
distribution,
no
undesired
byproducts,
defect
tolerance.
QLEDs
exhibit
peak
external
efficiency
over
21%,
luminance
9.5×10
4
cd
m
−2,
long
lifetime
1.0×10
6
h,
corresponding
to
state‐of‐the‐art
performance
among
on
CQDs.
Therefore,
it
believed
efficient
reliable
strategy
provided
CQDs,
can
be
QLEDs‐based
devices
make
these
products
reality.
Advanced Optical Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Dec. 30, 2024
Abstract
InP
quantum
dots
(QDs),
without
heavy
metals,
show
great
potential
for
display
and
lightening
applications.
However,
achieving
efficient
InP‐based
dot
light‐emitting
diodes
(QLEDs)
with
extended
operational
lifetime
remains
challenging
due
to
unbalanced
carrier
injection
within
the
device.
In
this
study,
polyvinyl
pyrrolidone
(PVP)
is
introduced
as
an
intermediate
layer
between
QDs
emitting
(EML)
ZnMgO
electron
transport
(ETL).
This
designed
block
excess
into
simultaneously
reduce
leakage
current.
Additionally,
introduction
of
PVP
can
passivate
QDs/ETL
interface
defects
inhibit
exciton
quenching
by
ETL.
The
optimized
device
achieves
a
peak
external
efficiency
(EQE)
23.5%
long
T
95
over
800
h
at
initial
luminance
1000
cd
m
−2
red
QLEDs
624
nm.
Both
EQE
represent
highest
values
achieved
date.
