Initial variations and optimization of electro-optic properties in CdSe/ZnS quantum-dot light-emitting diodes with ZnO nanoparticle electron transport layers DOI Creative Commons

Da-Yeon Hyeong,

Ho‐Nyeon Lee

Japanese Journal of Applied Physics, Journal Year: 2024, Volume and Issue: 63(10), P. 107001 - 107001

Published: Oct. 1, 2024

Abstract This study delves into the performance and stability of quantum-dot light-emitting diodes (QLEDs), with a specific focus on initial variations in device properties effectiveness various stabilization strategies. We assess impact bias conditions, reverse treatment, thermal annealing zinc oxide electron transport layer (ZnO transporting layer), effects shelf storage reliability efficiency. Our findings reveal that QLEDs are highly sensitive to yet this sensitivity can be significantly reduced through strategic interventions such as applications. These treatments shown markedly enhance operational devices. By providing deep insights mechanisms behind QLED properties, our research outlines practical measures for improving their reliability, profound implications advancement high-performance display technologies.

Language: Английский

Recent Progress on Blue Quantum Dot Light-Emitting Diodes from Materials to Device Engineering DOI

Youngwoo Jeon,

Hyungsuk Ryu,

Hyunho Lee

et al.

Korean Journal of Chemical Engineering, Journal Year: 2024, Volume and Issue: 41(13), P. 3483 - 3500

Published: July 19, 2024

Language: Английский

Citations

1
Size-Dependent Charging Energy Determines the Charge Transport in ZnO Quantum Dot Solids DOI

Morteza Shokrani,

Dorothea Scheunemann, Clemens Göhler

et al.

The Journal of Physical Chemistry C, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 22, 2024

Citations

1
Initial variations and optimization of electro-optic properties in CdSe/ZnS quantum-dot light-emitting diodes with ZnO nanoparticle electron transport layers DOI Creative Commons

Da-Yeon Hyeong,

Ho‐Nyeon Lee

Japanese Journal of Applied Physics, Journal Year: 2024, Volume and Issue: 63(10), P. 107001 - 107001

Published: Oct. 1, 2024

Abstract This study delves into the performance and stability of quantum-dot light-emitting diodes (QLEDs), with a specific focus on initial variations in device properties effectiveness various stabilization strategies. We assess impact bias conditions, reverse treatment, thermal annealing zinc oxide electron transport layer (ZnO transporting layer), effects shelf storage reliability efficiency. Our findings reveal that QLEDs are highly sensitive to yet this sensitivity can be significantly reduced through strategic interventions such as applications. These treatments shown markedly enhance operational devices. By providing deep insights mechanisms behind QLED properties, our research outlines practical measures for improving their reliability, profound implications advancement high-performance display technologies.

Language: Английский

Citations

0