Grain engineering for efficient near-infrared perovskite light-emitting diodes DOI Creative Commons
Sung‐Doo Baek, Wenhao Shao, Wei‐Jie Feng

et al.

Nature Communications, Journal Year: 2024, Volume and Issue: 15(1)

Published: Dec. 30, 2024

Abstract Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth nanoscale morphology is crucial further enhancing device performance. This study presents a engineering methodology that combines solvent heterostructure construction to improve light outcoupling efficiency defect passivation. Solvent enables precise control over size distribution, increasing ~40%. Constructing 2D/3D heterostructures conjugated cation reduces densities accelerates radiative recombination. The resulting perovskite diodes peak 31.4% demonstrate maximum brightness 929 W sr −1 m −2 . These findings indicate have potential as cost-effective, high-performance sources practical applications.

Language: Английский

Manipulating Intermediate Surface Energy for High‐Performance All‐Inorganic Perovskite Photovoltaics DOI Open Access
Hui Lü, Qian Wen,

Ru Qin

et al.

Advanced Energy Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 5, 2025

Abstract The complete phase transition from DMAPbI 3 and Cs 4 PbI 6 intermediates to the final CsPbI perovskite is pivotal for fabricating high‐quality inorganic films. In this study, reaction energy barrier between sought be reduced by increasing their surface energy, where a perfluorinated compound designed using DFT modeling saturate of effectively prevent crystalline growth. Consequently, smaller with ultrahigh react more energetically facilitate rapid conversion desired phase. It found that resultant shows improved crystallinity morphology, as demonstrated suppressed non‐radiative recombination prolonged carrier lifetimes. As result, optimized solar cells (PSCs) achieve power efficiency (PCE) over 20%, along significantly light thermal stability. This work provides way regulate crystallization dynamics advanced quality perovskites.

Language: Английский

Citations

1
Recent achievements in noble metal-based oxide electrocatalysts for water splitting DOI
Feng Wang,

Linfeng Xiao,

Y.‐B. Jiang

et al.

Materials Horizons, Journal Year: 2025, Volume and Issue: 12(6), P. 1757 - 1795

Published: Jan. 1, 2025

Noble metal-based oxide electrocatalysts are essential for the development of H 2 production technology by water electrolysis, and this review summarises recent research progress noble metal oxides in field electrolysis.

Language: Английский

Citations

1
Phase Control and Defect Passivation via (2-Aminoethyl)phosphonic Acid-Modified PEDOT:PSS for Blue Perovskite Light-Emitting Devices DOI
Z. Y. Ge, Li Song, Yuan Zhang

et al.

ACS Applied Nano Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 14, 2025

Achieving pure blue emission of perovskite light-emitting diodes (PeLEDs) is great importance for fulfilling full-color display and lighting applications. However, achieving high-performance PeLEDs in bromide quasi-2D (Q2D) perovskites has always been a formidable challenge. Here, an interface engineering strategy proposed to regulate the light color device photoelectric performance simultaneously by employing (2-aminoethyl)phosphonic acid (AEP)-modified poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS). The AEP-PEDOT:PSS not only enhances wettability toward precursor but also coordinates with unsaturated Pb atoms, facilitating growth nanocrystals fewer defects. Thereby, shifted from sky-blue region higher PLQY was achieved. Additionally, incorporation AEP reduces conductivity PEDOT:PSS film, enabling more balanced charge transport device. Consequently, modification achieve external quantum efficiency (EQE) 5.2%, approximately 1.9 times that control Our findings may provide valuable insights helpful guidance development Q2D LEDs.

Language: Английский

Citations

0
Nanocrystalline Perovskites for Bright and Efficient Light‐Emitting Diodes DOI Open Access
Kyung Yeon Jang, S. Chang, Dong‐Hyeok Kim

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 19, 2025

Abstract Nanocrystalline perovskites have driven significant progress in metal halide perovskite light‐emitting diodes (PeLEDs) over the past decade by enabling spatial confinement of excitons. Consequently, three primary categories nanocrystalline emerged: nanoscale polycrystalline perovskites, quasi‐2D and nanocrystals. Each type has been developed to address specific challenges enhance efficiency stability PeLEDs. This review explores representative material design strategies for these correlating them with exciton recombination dynamics optical/electrical properties. Additionally, it summarizes trends decade, outlining four distinct phases development. Lastly, this addresses remaining proposes a potential further advance PeLED technology toward commercialization.

Language: Английский

Citations

0
A Close-Space Fast Nucleation Strategy toward High-Efficiency Perovskite Light-Emitting Diodes DOI

Xinwen Sun,

Dongliang Ding,

Zhiguo Nie

et al.

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: March 23, 2025

Halide perovskite light-emitting diodes (PeLEDs), considered as potential candidates for future displays, face significant limitations in their external quantum efficiency (EQE) due to an uncontrollable nucleation and crystallization process. Herein, a close-space inverted annealing (CSIA) strategy is developed achieve fast obtain more uniform film with larger crystal domains much lower defect centers. The increased surficial temperature quick solvent evaporation the CSIA method result formation of numerous large nuclei solvate intermediates at initial stage, which effectively guide growth into domains, facilitated by residual solvent. CSIA-processed PeLED achieves peak EQE 25.8%, among best values near-infrared devices. Moreover, it applicable perovskite-emitting layers different passivation agents. This straightforward approach highlights great opportunity boost performance commercialization optoelectronic

Language: Английский

Citations

0
Peptide-Engineered Interface to Improve the Efficiency of Pure Red Tin Halide Perovskite LEDs by Controlling Crystallization and Reducing Oxidation DOI
Zhixian Wu, Xuan Zheng, Chunli Jiang

et al.

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 14, 2025

Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have garnered significant attention owing to their superior optoelectronic properties, affordable solution processing, and environmental friendliness. However, the properties of Sn-PeLEDs trail those lead (Pb) counterparts. The main obstacle is easy oxidation Sn2+ Sn4+ as well fast crystallization, leading poor film quality with many defects. Herein, a convenient effective interface engineering strategy reported fabricate (2-thiopheneethylamine)2SnI4 (TEA2SnI4) PeLEDs by introducing different peptides into PEDOT:PSS hole-transport layer (HTL). Benefiting from interaction between peptide molecules Sn-perovskite nuclei, crystallization dynamics are effectively adjusted, an improved morphology. At same time, multiple functional groups can suppress passivate Therefore, films luminescence efficiency obtained. further used for fabrication pure red enhanced performance. In particular, optimized devices based on Leu-Gly-Gly (LGG) achieve peak external quantum 0.5% brightness 136 cd m–2, which about 2 3 times larger, respectively, than reference device. This research offers general improve performance via engineering.

Language: Английский

Citations

0
金属卤化物钙钛矿电致发光稳定性研究进展（特邀） DOI

唐建新 Tang Jianxin,

熊妮 Xiong Ni,

曹欣宇 Cao Xinyu

et al.

Chinese Journal of Lasers, Journal Year: 2025, Volume and Issue: 52(5), P. 0501010 - 0501010

Published: Jan. 1, 2025

Citations

0
Amino Acids for Perovskite Light‐Emitting Diodes: Conformations, Mechanisms, and Applications DOI
Amjad Islam, Zeeshan Haider, Muhammad Imran

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 25, 2024

Abstract Among the most auspicious and efficient surface ligand candidates or additives to raise efficiency of perovskite light‐emitting diodes (PeLEDs) are amino acids (AAs), possessing a combination group carboxylic group. The AA molecules exhibit significant promise for coherent tailoring their molecular conformations yield remarkable advantages multi‐functional properties. This raises question that how PeLED devices can benefit greatly from small amount integrated in films. In order set up structure–property relationship, mysteries extraordinary improvement performance PeLEDs through AAs modification disclosed. Furthermore, there is critical discussion workable guidelines exploring with optimal conformations. Moreover, recent developments blue, green, red incorporating also highlighted detail. Lastly, suggestions future directions research as well logical construction functional potent more stable presented.

Language: Английский

Citations

2
Zwitterions: An Innovative Class of Additive Materials For Perovskite Light-Emitting Diodes DOI
Amjad Islam, Raja Asad Ali Khan, Ata Khalid

et al.

Materials Today Energy, Journal Year: 2024, Volume and Issue: unknown, P. 101752 - 101752

Published: Nov. 1, 2024

Language: Английский

Citations

0
Grain engineering for efficient near-infrared perovskite light-emitting diodes DOI Creative Commons
Sung‐Doo Baek, Wenhao Shao, Wei‐Jie Feng

et al.

Nature Communications, Journal Year: 2024, Volume and Issue: 15(1)

Published: Dec. 30, 2024

Abstract Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth nanoscale morphology is crucial further enhancing device performance. This study presents a engineering methodology that combines solvent heterostructure construction to improve light outcoupling efficiency defect passivation. Solvent enables precise control over size distribution, increasing ~40%. Constructing 2D/3D heterostructures conjugated cation reduces densities accelerates radiative recombination. The resulting perovskite diodes peak 31.4% demonstrate maximum brightness 929 W sr −1 m −2 . These findings indicate have potential as cost-effective, high-performance sources practical applications.

Language: Английский

Citations

0