2D Materials‐Based Photodetectors with Bi‐Directional Responses in Enabling Intelligent Optical Sensing

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 19, 2025

Abstract With the rapid advancement of 2D material‐based optoelectronic devices, significant progress is made in development all‐optical logic synaptic biomimetic and multidimensional detection systems. As entering to high‐speed information era, there an urgent demand for complex, compact, multifunctional, low‐energy, intelligent sensing chips. Examining evolution current technologies reveals a parallel bipolar response mechanisms‐from simple positive negative responses more intricate inhibition‐promotion dynamics with persistent characteristics. This significantly broadens their applications devices. Moreover, compared unipolar responses, complex offer greater flexibility adaptation unique one‐to‐one mapping high‐dimensional parameters such as polarization, phase, spectrum, positioning them promising candidates breakthroughs resolution. In this review, design strategies are comprehensively explored various materials, highlighting deep advanced fields. It aimed review provide broad overview bi‐directional mechanisms, offering inspiration designing next generation

Language: Английский

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A Self-Powered Organic Vision Sensor Array for Photopic Adaptation

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 10, 2025

With the rapid development of artificial intelligence, it is essential to develop a bionic vision sensor that boasts low power consumption, self-adaptability, and broadband sensing for efficient image preprocessing. We employed an organic p-type semiconductor, poly(3-hexylthiophene-2,5-diyl) (P3HT), in conjunction with Al electrode engineer Schottky junction. This design leverages photogating effect due charge trapping by defects at P3HT/Al interface, endowing this self-powered, two-terminal device photopic adaptability. The 1.9 eV bandgap P3HT enables substantial light absorption within visible spectrum, yielding significant photocurrent. By assembling 50 photoelectric sensors into 10 × 5 array, we successfully demonstrated formation process emulates adaptation, specifically recognizing letters. easily fabricated, self-powered retinomorphic has great potential mimic retinal structures, thereby heralding new frontier visual sensory devices.

Language: Английский

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Adaptive optoelectronic transistor for intelligent vision system

Journal of Semiconductors, Journal Year: 2025, Volume and Issue: 46(2), P. 021404 - 021404

Published: Feb. 1, 2025

Abstract Recently, for developing neuromorphic visual systems, adaptive optoelectronic devices become one of the main research directions and attract extensive focus to achieve transistors with high performances flexible functionalities. In this review, based on a description biological functions that are favorable dynamically perceiving, filtering, processing information in varying environment, we summarize representative strategies achieving these adaptabilities transistors, including adaptation detecting information, synaptic weight change, history-dependent plasticity. Moreover, key points corresponding comprehensively discussed. And applications color detection, signal extending response range light intensity, improve learning efficiency, also illustrated separately. Lastly, challenges faced transistor artificial vision system The inspired expected provide insights design application next-generation systems.

Language: Английский

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Ultrasensitive dynamic ultraviolet imaging based on Ga2O3 photodetector array

Optics Letters, Journal Year: 2025, Volume and Issue: 50(5), P. 1633 - 1633

Published: Feb. 13, 2025

Defects and noise in Ga 2 O 3 detectors have traditionally limited their practical application. In this work, by reducing the triethylgallium flow from 200 sccm to 50 sccm, oxygen vacancy was effectively suppressed, leading a transition Lorentzian flicker-type, with significant decrease current 0.15 nA 1.01 pA. This improvement enhanced detector’s performance, yielding high sensitivity (3.72 A/W), fast response time ( τ d1 / d2 = 1.6/13 ms), solar-blind detection characteristics. Leveraging low-noise detector, an 8 × photodetector array UV imaging system were developed, capable of target identification at distances up m, detecting radiation intensities 2.6 μW/cm , capturing real-time spatial movement point light sources. These advancements mark contribution development high-speed, high-sensitivity, systems.

Language: Английский

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Plasma‐Engineered AlGaN/GaN Optoelectronic Synapses for Low‐Power Neuromorphic Computing

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 18, 2025

Abstract The development of hardware‐level synaptic systems is crucial for enabling the advancement modern humanoid robotics and artificial intelligence to emulate biological vision. While optoelectronic synapses offer a promising solution, current implementations often require complex multi‐material integration floating gate configurations, hindering scalability energy efficiency. Here, two‐terminal device based on AlGaN/GaN heterostructures that integrates sensing memory functionalities into single introduced. By optimizing architecture through oxygen plasma treatment, UV sensitivity significantly enhanced carrier recombination reduced, perceive weak light (0.15 µW cm⁻ 2 ) with ultralow consumption (25.3 fJ per event). This exhibits rich behaviors, including paired‐pulse facilitation, short‐term plasticity, long‐term essential emulating learning processes. Furthermore, its potential diverse information processing tasks such as photonic encryption, associative learning, forgetting demonstrated. work paves way highly integrated, energy‐efficient neuromorphic capable mimicking complexity efficiency human brain.

Language: Английский

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Simulation of Optoelectronic Synaptic Behavior in SnSe₂/WSe₂ Heterojunction Transistors

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 20, 2025

Language: Английский

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Organic Synaptic Transistors Based on C8-BTBT/PMMA/PbS QDs for UV to NIR Face Recognition Systems

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 20, 2025

Developing optoelectronic synaptic devices with low power consumption, broadband response, and biological compatibility is crucial to simulate the functions of optic nerve. Here, an organic synapse transistor based on C8-BTBT/PMMA/PbS quantum dots (PbS QDs) fabricated, which has good stability, consumption (as as 0.49 fJ per event under 800 nm near-infrared optical pulse), response from ultraviolet wavelengths. Based trap release photogenerated carriers by PbS QDs, a series behaviors are simulated device. Furthermore, we use artificial neural network model realize recognition facial feature image in broad spectral range; rate reached 96.25% (350 ultraviolet), 92.14% (580 visible), 90.03% (800 near-infrared). This work beneficial for advancing development future intelligence vision sensing.

Language: Английский

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Selective UV Sensing for Energy‐Efficient UV‐A Artificial Synapses Using a ZnO/ZnGa₂O₄ Heterojunction Diode

Small, Journal Year: 2025, Volume and Issue: unknown

Published: March 5, 2025

As neuromorphic computing systems, which allow for parallel data storage and processing with high area energy efficiency, show great potential future in-memory technologies. In this article, a high-performance UV detector artificial optical synapse applications is demonstrated that can selectively detect UV-A UV-C, responsivity of 407 A W-1. The pyrophototronic effect increases photocurrent dramatically under irradiation due to heat accumulation in the ZnO layer ZnGa2O4's low thermal conductivity. context synaptic device, it's shown ZnO/ZnGa2O4 heterostructure be used as light-tunable charge trapping medium create an electro-photoactive synapse. photogating enables via pyrophototronic, traps photogenerated electrons within interface, drives activity, proven by electrical techniques based on stimuli. This phenomenon results selective detection capability over UV-C. Thermally produced plasticity, simulating biological activity. Persistent photoconductivity 380 (UV-A) nm light mimics processes, conductivity enhancing weight updates during learning forgetting. These findings possibility using heterostructures into optoelectronic systems controlled dynamics.

Language: Английский

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Artificial optoelectronic synapses based on Ga₂O₃ metal–semiconductor–metal solar‐blind ultraviolet photodetectors with asymmetric electrodes for neuromorphic computing

Deleted Journal, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 25, 2025

Abstract Research on optoelectronic synapses that can integrate both detection and processing functions is essential for the development of efficient neuromorphic computing. Here, we experimentally demonstrated an Ga 2 O 3 ‐based metal–semiconductor–metal (MSM) solar‐blind ultraviolet (UV) photodetector (PD) with asymmetric interdigital electrodes. The PD exhibits a responsivity 732 A/W under forward bias 6 V. tunable conductance properties PDs provide novel approach to synaptic performance. proposed as artificial synapse realized several function, including excitatory postsynaptic current, paired‐pulse facilitation, long‐term potentiation, transition from short‐term memory memory, learning experience behaviors successfully. At reverse bias, ultra‐low energy consumption 140 fJ was achieved. In addition, recognition accuracy over 95% in MNIST handwritten number task. These results suggest MSM UV have high potential computing applications.

Language: Английский

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Study on Metal-Oxide Field Effect Transistors of β-Gallium Oxide with AlGaO Spacer Layer Grown on Sapphire for High-Power Device Applications

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 19, 2025

Language: Английский

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