Small Methods,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Dec. 8, 2024
Abstract
To
enhance
the
efficiency
of
machine
vision
system,
physical
hardware
capable
sensing
and
encoding
is
essential.
However,
color
information
has
been
overlooked.
Therefore,
this
work
utilizes
an
indium‐gallium‐zinc
oxide
(IGZO)
phototransistor
to
detect
varying
densities
red,
green,
blue
(RGB)
light,
converting
them
into
corresponding
drain
current
(I
D
)
states.
By
applying
stochastic
gate
voltage
(V
G
pulses
IGZO
phototransistor,
fluctuations
are
generated
in
these
I
When
exceeds
threshold
TC
),
a
spike
signal
generated.
This
approach
enables
conversion
light
signals,
achieving
spike‐rate
encoding.
Moreover,
adjusting
standard
deviation
(σ)
V
controls
range
converted
rates,
while
altering
mean
(μ)
changes
baseline
level
rates.
Remarkably,
separate
RGB
channels
offer
tunable
process,
which
can
emphasize
individual
colors
correct
bias.
The
encoded
rates
also
fed
spiking
neural
network
(SNN)
for
CIFAR‐10
pattern
recognition,
accuracy
86%.
method
allows
operation
SNN
shows
tunability
process
light‐to‐spike
encoding,
opening
possibilities
image
processing.
Applied Physics Letters,
Journal Year:
2025,
Volume and Issue:
126(13)
Published: March 1, 2025
The
spectral
recognition
is
key
for
efficient
machine
vision
to
obtain
high
imaging
quality
of
color
target
objects.
However,
the
bidirectional
response
within
a
single
band
sensors
still
challenging
in-site
recognize
objects
from
multi-spectral
context.
Here,
inspired
by
avian
eyes,
we
propose
tetrachromatic-bidirectional
synaptic
transistor
based
on
WOx/WSe2
heterojunctions
with
ultraviolet
(UV)-photoactive
floating
gate
CdS
and
realize
bio-avian
enhanced
image
improved
under
background.
positive-synaptic
responses
are
exhibited
visible
wavelength
while
negative
UV
band.
Moreover,
bionic-kestrel
behaviors
exhibited,
such
as
object
images
accuracy
58%
93.1%
due
contribution
response.
This
work
provides
an
effective
neuromorphic
feature
signatures
contexts.
Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: April 14, 2025
Abstract
In
complex
and
diverse
visual
environments,
machine
vision
faces
higher
demands
for
recognition
capabilities,
requiring
more
precise
multimodal
detection
to
obtain
effective
scene
image
data.
However,
current
single
device
is
still
limited
broadband
without
spectral
selectivity
or
simple
switching
has
yet
achieve
multi‐modal
detection.
this
study,
a
back‐to‐back
organic
photodiode
presented
based
on
unique
barrier
effect
design
novel
spectrum‐adaptive
photodetector.
Derived
from
the
blocking
lowering
caused
by
voltage
illumination,
enables
independent
of
visible
(VIS)
spectra
narrowband
near‐infrared
(NIR)
spectra,
as
well
fusion
VIS
NIR
light
environment‐adaptive
amplification
By
achieving
within
pixel,
effectively
simplifies
structural
complexity.
The
detector
not
only
advances
development
electrically
tunable
bipolar
research
in
dual‐terminal
devices
but
also
offers
an
innovative
solution
enhance
accuracy
dynamic
environments.
Advanced Optical Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: April 21, 2025
Abstract
The
development
of
high‐speed
dual‐band
photodetectors
with
high
responsivity
is
important
for
several
applications
such
as
optical
communication,
biomedical
imaging
or
spectroscopy.
In
this
work,
a
phototransistor
ultra‐high
demonstrated,
which
potentially
also
allows
very
bandwidths.
device
called
graphene
adjustable‐barriers
and
capable
detection
in
the
visible‐infrared
(VIS‐IR)
range.
A
material
combination
intrinsic
hydrogenated
amorphous
silicon,
graphene,
n‐type
germanium
(n‐Ge)
used
demonstrator.
operation
based
on
light
induced
modulation
Fermi
energy
level
Schottky
barrier
heights.
For
first
time,
functional
mechanism
successfully
demonstrated
VIS
range
responsivities
exceeding
10
7
A/W
at
gate
voltage
20V.
bandwidth
1.2
kHz
so
far
limited
by
defective
silicon
relaxed
feature
sizes
These
results
are
an
step
toward
new
generation
high‐responsivity
photo
devices.
Applied Physics Letters,
Journal Year:
2025,
Volume and Issue:
126(17)
Published: April 28, 2025
AlGaN/GaN
high
electron
mobility
transistor
(HEMT)
has
excellent
promise
for
developing
industrially
viable
optoelectronic
logic
gates
(OELGs).
We
demonstrate
HEMT-based
non-classical
inverter
circuit
(OLIC)
serving
as
the
primary
step
toward
realization
of
complex
OELGs.
The
OLIC
consists
a
Schottky
diode
(SD)
and
phototransistor
(PT)
fabricated
on
HEMT
epi-structure
SiC
substrate.
SD
PT
work
load
driver,
respectively,
so
that
voltage
signals
could
be
easily
extracted
output
in
response
to
electrical
optical
inputs
with
suitable
gate
biasing.
Simple
fabrication
process
technological
compatibility
our
will
provide
promising
solution
can
extended
advanced
computing
circuits.
Self-powered
solar-blind
photodetectors
based
on
Ga2O3
heterojunctions
with
high
sensitivity
and
fast
response
speeds
are
in
demand
for
versatile
applications.
However,
the
inferior
assembly
of
heterojunction
interface
typically
results
a
significant
leakage
current
compromised
device
performance.
Herein,
we
fabricate
NiO/ε-Ga2O3
p-n
photodetector
first
time
introduce
high-resistance
homogeneous
layer
at
to
suppress
successfully.
The
serves
extend
depletion
region
thereby
reduce
probability
tunneling,
which
enhances
separation
efficiency
photogenerated
carriers
inhibits
current.
Consequently,
comprehensively
enhanced
performance
exhibits
notable
responsivity
160
mA/W,
remarkable
detectivity
3.7
×
1012
Jones,
speed,
rise
38
ms
decay
67
zero
bias,
is
superior
previous
studies
β-Ga2O3
field
self-powered
photodetectors.
This
work
provides
reliable
strategy
developing
advanced
Ga2O3-based
optoelectronic
devices.
The Journal of Physical Chemistry Letters,
Journal Year:
2025,
Volume and Issue:
unknown, P. 2681 - 2689
Published: March 6, 2025
A
narrowband
detection
photodetector
(PD)
serves
as
a
rapid
identifier
of
specific
wavebands,
holding
immense
significance
in
secure
communication
and
spectral
recognition.
Herein,
after
carbon
is
doped
into
GaN,
an
acceptor
energy
level
emerges
its
band
structure,
which
will
compensate
with
donor
states
GaN
to
reduce
carrier
concentration
make
semi-insulating,
it
affected
the
dark
current
electric
field
distribution
p-i-n
PD.
Operating
at
bias
0
V,
C-doped
PD
demonstrates
ultralow
density
high
light-to-dark
ratio
compared
undoped
intrinsic
i-layer
Moreover,
response's
full
width
half-maximum
only
8.11
nm
displays
signal
feedback
capabilities.
Consequently,
this
prepared
PD,
obviates
need
for
integrating
optical
filters
or
employing
sophisticated
processes,
stands
be
capable
accurately
distinguishing
UVA
radiation.
Recently,
the
growing
demand
for
data-centric
applications
has
significantly
accelerated
progress
to
overcome
"memory
wall"
caused
by
separation
of
image
sensing,
memory,
and
computing
units.
However,
despite
advancements
in
novel
devices
driving
development
in-sensor
paradigm,
achieving
seamless
integration
optical
storage,
processing
within
a
single
device
remains
challenging.
This
study
demonstrates
an
architecture
using
ferroelectric-defined
reconfigurable
α-In2Se3
phototransistor.
The
three
polarization
states
exhibit
linear
distinguishable
photoresponse,
with
maximum
photoresponse
current
difference
2.17
×
10-6
A
retention
time
exceeding
500
s.
nonvolatile
weight
synaptic
properties
are
programmed
external
electrical
stimulation,
enabling
112
distinct
conductance
nonlinearity
0.12.
Additionally,
supports
efficient
writing,
erasing,
optoelectronic
logic,
decoding
via
combined
control.
In-sensor
computation
edge
detection
is
simulated
embedding
Prewitt
convolution
kernel
into
3
array.
integrated
structure
array
design
highlight
strong
potential
2D
ferroelectric
semiconductors
computing,
providing
promising
platform
next-generation
multifunctional
artificial
vision
systems.
ACS Omega,
Journal Year:
2025,
Volume and Issue:
10(16), P. 16884 - 16891
Published: April 18, 2025
Realizing
the
dual-mode
electric
and
optical
synaptic
plasticity
within
one
neuromorphic
device
is
impressive
for
construction
of
a
compact
artificial
visual
system.
Here,
we
proposed
indium
gallium
zinc
oxide
(IGZO)
photoelectric
transistors
utilizing
all-solid-state
electrolytes
(Li-doped
ZrO2)
as
gate
dielectric
layers.
The
was
fabricated
by
using
facile
cost-effective
all-solution
method.
transistor
exhibited
plasticity.
Meanwhile,
tunable
conductance
achieved
through
potentiation
depression
processes,
demonstrating
potential
realizing
computing.
Based
on
this,
simulated
convolutional
neural
network
designed
to
realize
handwriting
digit
recognition,
achieving
an
accuracy
96.8%.
Additionally,
sophisticated
applications
such
logic
operations,
Pavlov's
classical
experiment,
pupillary
reflex
simulation
were
successfully
realized.
Therefore,
demonstrates
significant
future
in
vision.
