Low‐Temperature Controlled Growth of 2D LaOCl with Enhanced Dielectric Properties for Advanced Electronics DOI Open Access

Zhipeng Fu,

Chuanyong Jian,

Yao Yu

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 25, 2025

Abstract 2D semiconductors are widely regarded as the future of highly integrated circuits, but their commercialization is hindered by lack suitable gate dielectrics that meet stringent performance and processing requirements. In this study, a novel LiNO₃‐assisted Confined Flux Growth (CFG) method presented enables synthesis high‐quality LaOCl nanosheets at remarkably low temperatures (250–350 °C). The synthesized not only shows an exciting coexistence wide bandgap (≈5.54 eV) high dielectric constant (≈13.8) also can form van der Waals interfaces with semiconductors. Compared to traditional methods, CFG approach significantly reduces thermal budget, providing opportunities for facile integration semiconductor industry. Furthermore, multifunctional application demonstrated in transistors. MoS₂ field‐effect transistors (FET) gated exhibit excellent control (on/off ratio >10⁸) interfacial trap density. floating‐gate devices tunneling layer show extremely large storage window (≈91%) stable characteristics. These findings establish transformative material, paving way next‐generation electronic devices.

Language: Английский

Low‐Temperature Controlled Growth of 2D LaOCl with Enhanced Dielectric Properties for Advanced Electronics DOI Open Access

Zhipeng Fu,

Chuanyong Jian,

Yao Yu

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 25, 2025

Abstract 2D semiconductors are widely regarded as the future of highly integrated circuits, but their commercialization is hindered by lack suitable gate dielectrics that meet stringent performance and processing requirements. In this study, a novel LiNO₃‐assisted Confined Flux Growth (CFG) method presented enables synthesis high‐quality LaOCl nanosheets at remarkably low temperatures (250–350 °C). The synthesized not only shows an exciting coexistence wide bandgap (≈5.54 eV) high dielectric constant (≈13.8) also can form van der Waals interfaces with semiconductors. Compared to traditional methods, CFG approach significantly reduces thermal budget, providing opportunities for facile integration semiconductor industry. Furthermore, multifunctional application demonstrated in transistors. MoS₂ field‐effect transistors (FET) gated exhibit excellent control (on/off ratio >10⁸) interfacial trap density. floating‐gate devices tunneling layer show extremely large storage window (≈91%) stable characteristics. These findings establish transformative material, paving way next‐generation electronic devices.

Language: Английский

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