Bifacially Reinforced Self‐Assembled Monolayer Interfaces for Minimized Recombination Loss and Enhanced Stability in Perovskite/Silicon Tandem Solar Cells DOI

Guo Chang,

Hong‐Qiang Du,

Yu‐Chen Wang

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 12, 2025

Abstract Perovskite/silicon tandem solar cells have shown higher power conversion efficiencies (PCEs) than single‐junction cells. However, their record PCE still falls short of the theoretical maximum, and stability is significantly lower that crystalline silicon These challenges stem from substantial losses in open‐circuit voltage ( V OC ) instability wide‐bandgap perovskite devices, which are mainly caused by nonradiative recombination degradation at heterojunction interfaces, respectively. Specifically, weak adhesion between indium tin oxide (ITO) self‐assembled monolayers (SAMs), along with inadequate interactions SAMs perovskite, contributes to this instability. Herein, a novel SAM material, 4‐(11H‐benzo[a]carbazol‐11‐yl)butyl (4‐PhCz), has been developed bifacially reinforce interfaces enhancing coverage on ITO strengthening perovskites. The resulting 1.67 eV cell (PSCs) achieves 1.273 low loss 0.397 relative bandgap 22.53%. 4‐PhCz‐based perovskite/silicon 1.96 31.26%, retaining 92% its initial efficiency after 1000 h maximum point tracking (MPPT) under 1‐sun illumination nitrogen atmosphere 25 °C.

Language: Английский

Bifacially Reinforced Self‐Assembled Monolayer Interfaces for Minimized Recombination Loss and Enhanced Stability in Perovskite/Silicon Tandem Solar Cells DOI

Guo Chang,

Hong‐Qiang Du,

Yu‐Chen Wang

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 12, 2025

Abstract Perovskite/silicon tandem solar cells have shown higher power conversion efficiencies (PCEs) than single‐junction cells. However, their record PCE still falls short of the theoretical maximum, and stability is significantly lower that crystalline silicon These challenges stem from substantial losses in open‐circuit voltage ( V OC ) instability wide‐bandgap perovskite devices, which are mainly caused by nonradiative recombination degradation at heterojunction interfaces, respectively. Specifically, weak adhesion between indium tin oxide (ITO) self‐assembled monolayers (SAMs), along with inadequate interactions SAMs perovskite, contributes to this instability. Herein, a novel SAM material, 4‐(11H‐benzo[a]carbazol‐11‐yl)butyl (4‐PhCz), has been developed bifacially reinforce interfaces enhancing coverage on ITO strengthening perovskites. The resulting 1.67 eV cell (PSCs) achieves 1.273 low loss 0.397 relative bandgap 22.53%. 4‐PhCz‐based perovskite/silicon 1.96 31.26%, retaining 92% its initial efficiency after 1000 h maximum point tracking (MPPT) under 1‐sun illumination nitrogen atmosphere 25 °C.

Language: Английский

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