Synergetic Modulation of Steric Hindrance and Excited State for Anti‐Quenching and Fast Spin‐Flip Multi‐Resonance Thermally Activated Delayed Fluorophore DOI

Jia‐Ming Jin,

Denghui Liu,

Wen‐Cheng Chen

et al.

Angewandte Chemie International Edition, Journal Year: 2024, Volume and Issue: 63(16)

Published: Feb. 8, 2024

Multi-resonance thermally activated delayed fluorescence (MR-TADF) materials hold great promise for advanced high-resolution organic light-emitting diode (OLED) displays. However, persistent challenges, such as severe aggregation-caused quenching (ACQ) and slow spin-flip, hinder their optimal performance. We propose a synergetic steric-hindrance excited-state modulation strategy MR-TADF emitters, which is demonstrated by two blue IDAD-BNCz TIDAD-BNCz, bearing sterically demanding 8,8-diphenyl-8H-indolo[3,2,1-de]acridine (IDAD) 3,6-di-tert-butyl-8,8-diphenyl-8H-indolo[3,2,1-de]acridine (TIDAD), respectively. These rigid bulky IDAD/TIDAD moieties, with appropriate electron-donating capabilities, not only effectively mitigate ACQ, ensuring efficient luminescence across broad range of dopant concentrations, but also induce high-lying charge-transfer excited states that facilitate triplet-to-singlet spin-flip without causing undesired emission redshift or spectral broadening. Consequently, implementation high doping level resulted in highly narrowband electroluminescence, featuring remarkable full-width at half-maximum 34 nm record-setting external quantum efficiencies 34.3 % 31.8 maximum 100 cd m

Language: Английский

B,N‐Embedded Hetero[9]helicene Toward Highly Efficient Circularly Polarized Electroluminescence DOI
Wei‐Chen Guo, Wenlong Zhao,

Ke‐Ke Tan

et al.

Angewandte Chemie International Edition, Journal Year: 2024, Volume and Issue: 63(18)

Published: Feb. 21, 2024

The intrinsic helical π-conjugated skeleton makes helicenes highly promising for circularly polarized electroluminescence (CPEL). Generally, carbon undergo low external quantum efficiency (EQE), while the incorporation of a multi-resonance thermally activated delayed fluorescence (MR-TADF) BN structure has led to an improvement. However, reported B,N-embedded all show dissymmetry factors (g

Language: Английский

Citations

50

Recent progress and prospects of fluorescent materials based on narrow emission DOI

Hao-Ze Li,

Feng‐Ming Xie, Yanqing Li

et al.

Journal of Materials Chemistry C, Journal Year: 2023, Volume and Issue: 11(20), P. 6471 - 6511

Published: Jan. 1, 2023

MR-TADF emitters with narrow emission have been developed and are expected to become fourth-generation for HD-OLEDs, molecular design guidelines commercial prospects outlined in this review.

Language: Английский

Citations

45

Multi‐Resonance Building‐Block‐Based Electroluminescent Material: Lengthening Emission Maximum and Shortening Delayed Fluorescence Lifetime DOI
Xinliang Cai,

Yexuan Pu,

Chenglong Li

et al.

Angewandte Chemie International Edition, Journal Year: 2023, Volume and Issue: 62(27)

Published: April 29, 2023

Multi-resonance thermally activated delayed fluorescence (MR-TADF) materials are considered a class of organic with exceptional electronic and optical properties, which make them promising for the applications in light-emitting diodes (OLEDs). In this study, we improved, synthesized, characterized multiple-resonance type emitter based on assembly MR-building blocks (MR-BBs). By optimizing geometric arrangement MR-BBs, were able to generate narrowband emission longer wavelength region shorten excited-state lifetime, resulting improved efficiency compared parent molecule. Our proof-of-concept molecule, m-DBCz, exhibited yellowish-green TADF full width at half-maximum 32 nm small singlet-triplet energy gap 0.04 eV. The OLED developed using m-DBCz as demonstrated electroluminescence 548 achieved high external quantum (EQE) 34.9 %. Further optimization device resulted 36.3 % extremely low roll-off, EQE values 30.1 27.7 obtained even luminance levels 50 000 100 cd m-2 . These results demonstrate potential MR-TADF ultrahigh-luminance OLEDs.

Language: Английский

Citations

45

Recent advances in highly-efficient near infrared OLED emitters DOI Creative Commons
Paloma L. dos Santos, Patrycja Stachelek, Youhei Takeda

et al.

Materials Chemistry Frontiers, Journal Year: 2024, Volume and Issue: 8(7), P. 1731 - 1766

Published: Jan. 1, 2024

This work describes recent developments in near-infrared (NIR) organic light-emitting diode (OLED) emitters. We discuss applications of NIR OLEDs as well various groups highly luminescent materials used the OLED emissive layer.

Language: Английский

Citations

36

Synergetic Modulation of Steric Hindrance and Excited State for Anti‐Quenching and Fast Spin‐Flip Multi‐Resonance Thermally Activated Delayed Fluorophore DOI

Jia‐Ming Jin,

Denghui Liu,

Wen‐Cheng Chen

et al.

Angewandte Chemie International Edition, Journal Year: 2024, Volume and Issue: 63(16)

Published: Feb. 8, 2024

Multi-resonance thermally activated delayed fluorescence (MR-TADF) materials hold great promise for advanced high-resolution organic light-emitting diode (OLED) displays. However, persistent challenges, such as severe aggregation-caused quenching (ACQ) and slow spin-flip, hinder their optimal performance. We propose a synergetic steric-hindrance excited-state modulation strategy MR-TADF emitters, which is demonstrated by two blue IDAD-BNCz TIDAD-BNCz, bearing sterically demanding 8,8-diphenyl-8H-indolo[3,2,1-de]acridine (IDAD) 3,6-di-tert-butyl-8,8-diphenyl-8H-indolo[3,2,1-de]acridine (TIDAD), respectively. These rigid bulky IDAD/TIDAD moieties, with appropriate electron-donating capabilities, not only effectively mitigate ACQ, ensuring efficient luminescence across broad range of dopant concentrations, but also induce high-lying charge-transfer excited states that facilitate triplet-to-singlet spin-flip without causing undesired emission redshift or spectral broadening. Consequently, implementation high doping level resulted in highly narrowband electroluminescence, featuring remarkable full-width at half-maximum 34 nm record-setting external quantum efficiencies 34.3 % 31.8 maximum 100 cd m

Language: Английский

Citations

32