High‐Density, Crosstalk‐Free, Flexible Electrolyte‐Gated Synaptic Transistors Array via All‐Photolithography for Multimodal Neuromorphic Computing

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 13, 2025

Abstract High‐density bio‐electrolyte‐gated synaptic transistors (BEGTs) array are promising for constructing neuromorphic computing architectures. Due to the bulk ion conductivity and crack sensitivity of electrolyte film, patterning is an indispensable route prevent spatial crosstalk improve flexibility device array. However, susceptibility bio‐electrolyte organic solvents poses challenges in developing reliable all‐photolithography techniques fabricating scalable, patterned, high‐density BEGTs This study introduces method that adopts a photo‐crosslinker‐enabled create (11846 devices per cm 2 ) multimodal demonstrates essential behaviors without inter‐device maintains its flexibility, enduring 200 bending cycles at 6 mm radius significant performance degradation. Meanwhile, exhibits behavior, not only successfully mimicking biological visual memory system sensing processing images but also proving highly accurate classifying handwritten digits, making it suitable systems. work offers dependable strategy scalable stable fabrication array, providing valuable insights advancing artificial

Language: Английский

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Weak UV-Stimulated Synaptic Transistors Based on Precise Tuning of Gallium-Doped Indium Zinc Oxide Nanofibers

Advanced Fiber Materials, Journal Year: 2023, Volume and Issue: 5(6), P. 1919 - 1933

Published: Aug. 1, 2023

Language: Английский

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Printable Epsilon‐Type Structure Transistor Arrays with Highly Reliable Physical Unclonable Functions

Advanced Materials, Journal Year: 2023, Volume and Issue: 35(16)

Published: Feb. 3, 2023

Printed electronics promises to drive the future data-intensive technologies, with its potential fabricate novel devices over a large area low cost on nontraditional substrates. In these emerging there exists digital information flow, which requires secure communication and authentication. Physical unclonable functions (PUFs) offer promising built-in hardware-security system comparable biometrical data, can be constructed by device-specific intrinsic variations in additive manufacturing process of active devices. However, printed PUFs typically exploit inherent variation layer thickness roughness The current enough significant changes increase robustness external environment noise is still challenge. Here, printable epsilon-type-structure indium tin oxide transistor arrays are demonstrated construct high-reliability modifying coffee-ring structure. epsilon-type structure improves printing scalability, film quality, device reliability. Furthermore, print-induced uncertainty along channel length lead carrier concentration. Notably, randomly distributed droplets small significantly this uncertainty. As result, exhibit near-ideal uniformity, uniqueness, randomness, Additionally, resilient against machine-learning-based attacks prediction accuracy only 55% without postprocessing.

Language: Английский

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A Low‐Toxic Colloidal Quantum Dots Sensitized IGZO Phototransistor Array for Neuromorphic Vision Sensors

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: 12(11)

Published: Jan. 15, 2024

Abstract The rapid development of optoelectronic devices with biomimetic synaptic behavior holds significant potential for neuromorphic visual applications. However, considerable challenges remain including convenient device fabrication and low toxicity materials innovation. Here, a heterojunction phototransistor is constructed using low‐toxic CuZnInSSe (CIZS) colloidal quantum dots amorphous InGaZnO (IGZO), which demonstrates high specific detectivity 3.4 × 10 15 Jones in visible light spectrum. Moreover, it found that the photoresponse speed can be controlled via ligand exchange treatment, through response adjusted from 0.3 to 11 s. This enables operate two distinct modes: typical fast sensing mode mode. In mode, device's tuned by manipulating pulse intensity, frequency, wavelength, gate voltage. As demonstration, array effectively implements image pre‐processing functions, color recognition, memorizing, forgetting.

Language: Английский

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Low‐Power Optoelectronic Synaptic Transistors with Multimodal Neuromorphic Computation and Retinal‐Inspired Multiband Optical Binary Communication

Small Science, Journal Year: 2025, Volume and Issue: 5(5)

Published: Jan. 21, 2025

Biomimetic neuromorphic optoelectronics exude tempting attraction in multimodal interaction and visual applications because of their capability integrating sensing, memorizing, processing a single device. Herein, natural dextran film that is intrinsically green transparent employed as the dielectric optoelectronic synaptic transistors (OSTs). The resulting dextran‐OSTs operate at an ultralow energy consumption (15.89 aJ) exhibit computation ability with excellent plasticity, including pair‐pulse facilitation (PPF, high 494%), spike voltage/frequency/duration/number‐dependent recognition accuracy 89.95% by handwritten digital datasets. Furthermore, device exhibits self‐adaptation audiovisual fusion effect, showcasing immense potential synergy sensing. More importantly, can significantly advance capabilities binary optical information memorizing. This demonstrates great advantages computation, self‐adaptation, multiband communication.

Language: Английский

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Recent progress in organic optoelectronic synaptic transistor arrays: fabrication strategies and innovative applications of system integration

Journal of Semiconductors, Journal Year: 2025, Volume and Issue: 46(2), P. 021405 - 021405

Published: Feb. 1, 2025

Abstract The rapid growth of artificial intelligence has accelerated data generation, which increasingly exposes the limitations faced by traditional computational architectures, particularly in terms energy consumption and latency. In contrast, data-centric computing that integrates processing storage potential reducing latency usage. Organic optoelectronic synaptic transistors have emerged as one type promising devices to implement paradigm owing their superiority flexibility, low cost, large-area fabrication. However, sophisticated functions including vector-matrix multiplication a single device can achieve are limited. Thus, fabrication utilization organic transistor arrays (OOSTAs) imperative. Here, we summarize recent advances OOSTAs. Various strategies for manufacturing OOSTAs introduced, coating casting, physical vapor deposition, printing, photolithography. Furthermore, innovative applications OOSTA system integration discussed, neuromorphic visual systems systems. At last, challenges future perspectives utilizing real-world discussed.

Language: Английский

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Weak Light‐Stimulated Synaptic Transistors Based on MoS₂/Organic Semiconductor Heterojunction for Neuromorphic Computing

Advanced Materials Technologies, Journal Year: 2023, Volume and Issue: 8(16)

Published: May 16, 2023

Photonic synapses are expected to play an important role in implementing brain‐like computing owing the wide bandwidth and low mutual interference of optical signals. Herein, photonic synaptic transistors based on inorganic semiconductor molybdenum disulfide (MoS 2 ) organic heterojunction with adjustable short‐term/long‐term plasticity proposed. Benefitting from outstanding photosensitive characteristics originating heterojunction, devices have capability weak light detection can exhibit distinct responses even under ultraweak intensity 40 nW cm −2 , which is considerably lower than that most previously reported transistors. Furthermore, a energy consumption 0.4 fJ per event be obtained at operating voltage 0.001 V, required for single observed human brains. In addition, implement high‐pass filtering function illustrate potential image sharpening processing. More significantly, logic functions as well associative learning behavior dramatically simulated through all‐optical stimulation. This work demonstrates feasible approach developing multifunctional inorganic/organic neuromorphic computing.

Language: Английский

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Highly uniform organic nanowire synaptic arrays with excellent performance for associative memory

Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: 492, P. 152244 - 152244

Published: May 14, 2024

Language: Английский

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Long-memory retention and self-powered ultraviolet artificial synapses realized by multi-cation metal oxide semiconductors

Journal of Materials Chemistry C, Journal Year: 2023, Volume and Issue: 11(21), P. 7098 - 7105

Published: Jan. 1, 2023

We fabricated synaptic transistors based on IZTO-6 nanowires, which can achieve long-memory retention of long-term potentiation. Meanwhile, Al/IZTO-6/Ni devices indicate that MOS synapses have self-powered capability.

Language: Английский

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75 kbit printed indium oxide (IO)/indium gallium zinc oxide (IGZO) heterojunction photoelectric synaptic transistor arrays for an artificial visual memory system

Journal of Materials Chemistry C, Journal Year: 2023, Volume and Issue: 11(21), P. 7019 - 7029

Published: Jan. 1, 2023

A printing technology was developed to construct 75 kbit IO/IGZO heterojunction photoelectric synaptic transistor arrays for an artificial visual memory system.

Language: Английский

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