Abstract
Far‐red
(FR)
and
near‐infrared
(NIR)
spectroscopy
technologies
have
attracted
extensive
attention.
How
to
obtain
luminescent
materials
suitable
FR‐NIR
phosphor‐converted
light‐emitting
diodes
(pc‐LEDs)
is
a
crucial
challenge.
Herein,
Si
3
N
4
‐substitution
strategy
employed
regulate
the
luminescence
of
Gd
Ga
5
O
12
:Cr
3+
(GGG:Cr
)
phosphors.
The
bandwidth
GGG:Cr
95
nm,
then
it
broadened
116
nm
due
‐substitution.
Furthermore,
at
423
K
thermal
stability
enhanced
98.7%
that
room
temperature,
which
higher
than
reported
92.7%@423
for
‐free
sample.
intensity
optimal
specimen
elevated
2.9
times
compared
with
sample
sintered
same
condition.
FR
pc‐LED
manufactured
by
using
optimized
sample,
its
output
power
47.1
mW
conversion
efficiency
15.9%
driven
100
mA.
This
work
paves
new
way
design
high‐performance
NIR
Advanced Materials,
Journal Year:
2023,
Volume and Issue:
35(22)
Published: March 3, 2023
Ultra-efficient
broadband
near-infrared
(NIR)
phosphor-converted
light-emitting
diodes
(pc-LEDs)
are
urgently
needed
to
improve
the
detection
sensitivity
and
spatial
resolution
of
current
smart
NIR
spectroscopy-based
techniques.
Nonetheless,
performance
pc-LED
has
severely
limited
owing
external
quantum
efficiency
(EQE)
bottleneck
materials.
Herein,
a
blue
LED
excitable
Cr3+
-doped
tetramagnesium
ditantalate
(Mg4
Ta2
O9
,
MT)
phosphor
is
advantageously
modified
through
lithium
ion
as
key
efficient
emitter
achieve
high
optical
output
power
light
source.
The
emission
spectrum
encompasses
700-1300
nm
electromagnetic
first
biological
window
(λmax
=
842
nm)
with
full-width
at
half-maximum
(FWHM)
≈2280
cm-1
(≈167
nm),
achieves
record
EQE
61.25%
detected
450
excitation
Li-ion
compensation.
A
prototype
fabricated
MT:Cr3+
Li+
evaluate
its
potential
practical
application,
which
reveals
an
53.22
mW
driving
100
mA,
photoelectric
conversion
25.09%
10
mA.
This
work
provides
ultra-efficient
luminescent
material,
shows
great
promise
in
applications
presents
novel
option
for
next-generation
high-power
compact
sources.
ACS Applied Materials & Interfaces,
Journal Year:
2023,
Volume and Issue:
15(27), P. 32580 - 32588
Published: June 29, 2023
Blue
InGaN
chip-pumped
short-wave
infrared
(SWIR)
emitters
have
aroused
tremendous
attention
and
shown
emerging
applications
in
diverse
fields
such
as
healthcare,
retail,
agriculture.
However,
discovering
blue
light-emitting
diode
(LED)-pumped
SWIR
phosphors
with
a
central
emission
wavelength
over
1000
nm
remains
significant
challenge.
Herein,
we
demonstrate
the
efficient
broadband
luminescence
of
Ni2+
by
simultaneously
incorporating
Cr3+
ions
into
MgGa2O4
lattice,
sensitizer
emitter.
Because
strong
light
absorption
high
energy
transfer
efficiency
to
Ni2+,
obtained
MgGa2O4:Cr3+,
show
intense
peak
at
1260
full
width
half
maximum
(FWHM)
222
under
excitation
light.
The
optimized
phosphor
presents
an
ultra-high
photoluminescence
quantum
96.5%
outstanding
thermal
stability
(67.9%@150
°C).
A
source
has
been
fabricated
through
combination
prepared
commercial
450
LED
chip,
delivering
radiant
power
14.9
mW
150
mA
input
current.
This
work
not
only
demonstrates
feasibility
developing
high-power
using
converter
technology
but
also
new
insights
importance
technology.
ACS Applied Materials & Interfaces,
Journal Year:
2024,
Volume and Issue:
16(23), P. 30185 - 30195
Published: May 31, 2024
Broadband
near-infrared
(NIR)
phosphor-converted
light-emitting
diodes
(pc-LEDs)
hold
promising
potential
as
next-generation
compact,
portable,
and
intelligent
NIR
light
sources.
Nonetheless,
the
lack
of
high-performance
broadband
phosphors
with
an
emission
peak
beyond
900
nm
has
severely
hindered
development
widespread
application
pc-LEDs.
This
study
presents
a
strategy
for
precise
control
energy-state
coupling
in
spinel
solid
solutions
composed
MgxZn1–xGa2O4
to
tune
emissions
Cr3+
activators.
By
combining
crystal
field
engineering
heavy
doping,
Cr3+–Cr3+
ion
pair
from
4T2
state
is
unlocked,
giving
rise
unusual
spanning
650
1400
maximum
913
full
width
at
half-maximum
(fwhm)
213
nm.
Under
optimal
Mg/Zn
ratio
4:1,
sample
achieves
record-breaking
performance,
including
high
internal
external
quantum
efficiency
(IQE
=
83.9%
EQE
35.7%)
excellent
thermal
stability
(I423
K/I298
K
75.8%).
Encapsulating
as-obtained
into
prototype
pc-LEDs
yields
overwhelming
output
power
124.2
mW
driving
current
840
mA
photoelectric
conversion
(PCE)
10.5%
30
mA,
rendering
performance
imaging
applications.
Advanced Functional Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: April 30, 2024
Abstract
Fe
3+
‐doped
MgGa
2
O
4
(MGO:
)
spinel‐type
near‐infrared
(NIR)
phosphor
with
non‐toxicity,
outstanding
thermal
stability,
and
tunable
emission
has
recently
gained
great
concern
owing
to
its
wide
applications.
Nevertheless,
the
existence
of
detrimental
defects
in
host
forbidden
d‐d
transitions
lead
unsatisfactory
luminescence
efficiency,
limiting
commercial
application.
In
this
study,
a
vacancy
repairing
engineering
been
innovatively
developed
via
F
−
substitution
MGO:
(MGOF:
for
significantly
enhancing
NIR
maintaining
stability.
Specifically,
similar
radius
effectively
repairs
intrinsic
MGO,
thereby
prohibiting
electron‐capturing
effect.
Meanwhile,
incorporation
can
make
lattice
MGO
distort
break
transition
.
Significantly,
obtained
MGOF:
presents
16‐fold
higher
intensity
than
that
More
important,
remain
at
91.17%
(363
K)
85.10%
(423
K).
Finally,
be
used
night
vision,
non‐destructive
biological
tissue
detection,
food
analysis.
The
proposed
strategy
certainly
stimulate
some
new
thoughts
concepts
designing
high‐performance
phosphors
wider
InfoMat,
Journal Year:
2024,
Volume and Issue:
6(5)
Published: March 28, 2024
Abstract
Near‐infrared
(NIR)
luminescent
metal
halide
(LMH)
materials
have
attracted
great
attention
in
various
optoelectronic
applications
due
to
their
low‐temperature
solution‐processable
synthesis,
abundant
crystallographic/electronic
structures,
and
unique
properties.
However,
some
challenges
still
remain
luminescence
design,
performance
improvement,
application
assignments.
This
review
systematically
summarizes
the
development
of
NIR
LMHs
through
classifying
origins
into
four
major
categories:
band‐edge
emission,
self‐trapped
exciton
(STE)
ion
defect‐related
emission.
The
mechanisms
different
types
are
discussed
detail
by
analyzing
typical
examples.
Reasonable
strategies
for
designing
optimizing
luminescence/optoelectronic
properties
summarized,
including
bandgap
engineering,
self‐trapping
state
chemical
composition
modification,
energy
transfer,
other
auxiliary
such
as
improvement
synthesis
scheme
post‐processing.
Furthermore,
prospects
based
on
devices
revealed,
phosphor‐converted
light‐emitting
diodes
(LEDs),
electroluminescent
LEDs,
photodetectors,
solar
cells,
x‐ray
scintillators,
well
demonstrations
related
practical
applications.
Finally,
existing
future
perspectives
LMH
critically
proposed.
aims
provide
general
understanding
guidance
design
high‐performance
materials.
image
Advanced Optical Materials,
Journal Year:
2023,
Volume and Issue:
11(23)
Published: July 26, 2023
Abstract
Applications
in
near‐infrared
(NIR)
have
been
explored
significantly
many
fields,
including
bioimaging,
night
vision,
plant
growth,
and
chemical
analysis.
Different
emission
profiles
are
required
within
the
same
industry.
Developing
luminescent
materials
with
different
tuning
methods
is
reliable
for
controlling
NIR
regions
(NIR‐I,
700–1000
nm;
NIR‐II,
1000–1700
nm).
Spinel
phosphors
promising
candidates
due
to
their
ability
modulate
crystal
field.
Understanding
parameters
that
influence
degree
of
inversion
spinel
compounds
crucial
harness
variability
structure.
Cr
3+
Ni
2+
ideal
activators
NIR‐I
NIR‐II
emissions,
respectively.
However,
there
a
need
emit
region
when
excited
by
visible
light.
Although
energy
transfer
method
combining
two
considered,
this
review
focuses
on
types
structures,
discussing
common
strategies
tune
host
The
goal
achieve
desired
shift
broadness
entire
spectrum,
highlighting
importance
spectrum
practical
applications.
Advanced Optical Materials,
Journal Year:
2023,
Volume and Issue:
12(4)
Published: Aug. 31, 2023
Abstract
Near‐infrared
(NIR)
phosphors
are
enablers
for
NIR
phosphor‐converted
light‐emitting
diodes
(pc‐LEDs).
However,
fewer
NIR‐emitting
with
both
high
internal/external
quantum
efficiency
(IQE/EQE)
and
thermal
stability
discovered,
which
obstructs
the
promotion
of
pc‐LEDs.
Herein,
by
partially
replacing
Al
3+
in
K‐β‐Al
2
O
3
:2Cr
Ga
,
photoluminescence
(PL)
intensity
solid
solution
K
1+δ
(Al
0.4
0.6
)
11
17
(KA
G
O:Cr)
phosphor
is
increased
2.75
1.25
times
that
end‐members
(KAO:Cr)
(KGO:Cr).
The
IQE/EQE
optimal
KA
O:Cr
reaches
88.9%/50.8%
(77.4%@150
°C).
PL
enhancement
due
to
Al/Ga‐6O
octahedral
volume
distortion
variation
caused
substitution
1‐y
,Ga
y
O:Cr),
leads
forbidden
d–d
transition
being
broken
crystal
field
strength
varied.
Finally,
a
pc‐LED
device
fabricated
based
on
blue
chip
an
electro‐optical
16.3%
under
drive
current
100
mA.
Meanwhile,
non‐destructive
detection
plant
germination
applications
demonstrated.
These
results
prove
promising
diverse
applications.
Advanced Optical Materials,
Journal Year:
2023,
Volume and Issue:
12(13)
Published: Dec. 16, 2023
Abstract
In
modern
technology
devices,
an
energy‐saving
miniature
near‐infrared
(NIR)
light
source
plays
a
critical
role
in
non‐destructive,
non‐invasive
sensing
applications
and
further
advancement
of
technology.
This
paper
reports
the
broadband
NIR
luminescence
Cr
3+
clusters
for
designing
phosphor‐converted
light‐emitting
diodes
as
alternative
to
typical
isolated
centers
ion
pairs.
Here,
form
intermediate
spinel
structure
MgGa
2
O
4
by
utilizing
long‐chain
edge‐shared
octahedral
dimers
with
shortest
bond
distance
between
cations.
Electron
paramagnetic
magnetometry
measurements
confirm
clusters,
resulting
three
distinct
emission
centers.
The
formation
ensures
stable
internal
quantum
efficiency
(≈94%),
full‐width‐half‐maximum
(248
nm),
thermal
stability
(87%),
radiant
flux
≈17.66
mW.
work
offers
promising
approach
phosphor
design
enhances
understanding
mechanisms
related
structures.
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Nov. 3, 2024
Abstract
Ultrabright
broadband
near‐infrared
(NIR)
phosphor‐converted
laser
diode
(pc‐LD)
as
a
light
source
is
increasingly
essential
for
improving
the
sensitivity
and
spatial
resolution
of
intelligent
NIR
spectroscopy
technologies.
However,
performance
pc‐LD
greatly
hindered
by
low
external
quantum
efficiency
(EQE)
poor
thermal
resistance
phosphor
materials.
Herein,
highly
stable
phosphor‐in‐ceramic
(PiC)
film
deposited
on
high
conductivity
substrate,
in
which
NIR‐emitting
Ca
3
MgHfGe
O
12
:Cr
3+
incorporated
into
glass‐crystallized
Ga
2
Ge
ceramic
matrix,
along
with
formation
new
type
PiC
composite
material
efficiency,
absorbance,
conductivity,
designed
prepared.
The
obtained
exhibits
an
impressive
EQE
57.7%,
17.1
W
m
−1
K
,
wheel
demonstrates
emission
exceeding
5
when
excited
450
nm
laser.
Finally,
groundbreaking
electrically
driven
device
based
achieves
1.6
output,
enabling
multiple
applications
archaeology
night
vision
imaging.
This
work
paves
way
advancing
sources
diverse
range
photonic
applications.
Chemistry of Materials,
Journal Year:
2024,
Volume and Issue:
36(8), P. 3941 - 3948
Published: April 12, 2024
Increasing
demand
for
near-infrared-II
(NIR-II)
light
sources
requires
improved
NIR-II
phosphors.
We
present
a
series
of
phosphors
codoped
with
Cr3+
and
Ni2+
that
possess
emission
an
unprecedented
internal
quantum
efficiency
(IQE)
97.4%.
Our
study
reveals
energy
transfer
mechanism
involving
clusters
where
luminescent
centers
are
closely
matched
in
the
intensity
can
be
tuned
through
sintering
temperature.
The
profound
electron
paramagnetic
resonance
(EPR)
studies
disclose
interaction
between
Cr3+–Ni2+
pairs,
further
proving
cause
such
high
IQE
significance
clusters.
This
work
provides
promising
pathways
development
light-emitting
diodes
outstanding
by
suggesting
new
source
Cr3+.