Abstract
Far‐red
(FR)
and
near‐infrared
(NIR)
spectroscopy
technologies
have
attracted
extensive
attention.
How
to
obtain
luminescent
materials
suitable
FR‐NIR
phosphor‐converted
light‐emitting
diodes
(pc‐LEDs)
is
a
crucial
challenge.
Herein,
Si
3
N
4
‐substitution
strategy
employed
regulate
the
luminescence
of
Gd
Ga
5
O
12
:Cr
3+
(GGG:Cr
)
phosphors.
The
bandwidth
GGG:Cr
95
nm,
then
it
broadened
116
nm
due
‐substitution.
Furthermore,
at
423
K
thermal
stability
enhanced
98.7%
that
room
temperature,
which
higher
than
reported
92.7%@423
for
‐free
sample.
intensity
optimal
specimen
elevated
2.9
times
compared
with
sample
sintered
same
condition.
FR
pc‐LED
manufactured
by
using
optimized
sample,
its
output
power
47.1
mW
conversion
efficiency
15.9%
driven
100
mA.
This
work
paves
new
way
design
high‐performance
NIR
Advanced Optical Materials,
Journal Year:
2023,
Volume and Issue:
12(12)
Published: Dec. 28, 2023
Abstract
The
development
of
the
new
generation
smart
near
infrared
(NIR)
light
sources
is
a
problem
demanding
prompt
solution
with
increasing
role
NIR
spectroscopy
in
security,
food,
medical
treatment,
agriculture,
and
other
fields.
In
this
work,
Cr
3+
doped
ANb
2
O
6
(A
=
Zn/Mg)
phosphors
are
successfully
developed,
which
generate
emission
peak
at
930
nm
covering
750–1300
under
excitation
515
light.
Thanks
to
small
Stokes
shift,
internal
quantum
efficiency
(IQE)
values
optimal
samples
ZnNb
:Cr
MgNb
reach
up
70%
62%,
respectively.
This
ultra‐broadband
originates
from
simultaneous
occupation
[AO
]
[NbO
octahedrons
by
,
confirmed
wavelength‐dependent
spectra,
low‐temperature
photoluminescence
spectra
(77
K),
time‐resolved
(TRPL)
density
functional
theory
(DFT)
calculation.
thermal
quenching
mechanism
revealed
aspects
cross
ionization.
Benefiting
excellent
performance
Zn
/
Mg)
phosphors,
combination
520
LED
chips,
as‐prepared
demonstrate
dramatic
potential
applications
night
vision,
non‐destructive
testing,
biological
tissue
imaging,
spectral
analysis.
Abstract
Far‐red
(FR)
and
near‐infrared
(NIR)
spectroscopy
technologies
have
attracted
extensive
attention.
How
to
obtain
luminescent
materials
suitable
FR‐NIR
phosphor‐converted
light‐emitting
diodes
(pc‐LEDs)
is
a
crucial
challenge.
Herein,
Si
3
N
4
‐substitution
strategy
employed
regulate
the
luminescence
of
Gd
Ga
5
O
12
:Cr
3+
(GGG:Cr
)
phosphors.
The
bandwidth
GGG:Cr
95
nm,
then
it
broadened
116
nm
due
‐substitution.
Furthermore,
at
423
K
thermal
stability
enhanced
98.7%
that
room
temperature,
which
higher
than
reported
92.7%@423
for
‐free
sample.
intensity
optimal
specimen
elevated
2.9
times
compared
with
sample
sintered
same
condition.
FR
pc‐LED
manufactured
by
using
optimized
sample,
its
output
power
47.1
mW
conversion
efficiency
15.9%
driven
100
mA.
This
work
paves
new
way
design
high‐performance
NIR
