Optics Express,
Journal Year:
2024,
Volume and Issue:
32(6), P. 9227 - 9227
Published: Feb. 2, 2024
Ultraviolet
(UV)
photodetector
plays
an
important
role
in
military,
civilian
and
people's
daily
life,
is
indispensable
part
of
spectral
detection.
However,
photodetectors
target
at
the
UVB
region
(280-320
nm)
are
rarely
reported,
devices
detected
by
medium-wave
UV
light
generally
have
problems
such
as
low
detection
rate,
sensitivity,
poor
stability,
which
difficult
to
meet
market
application
needs.
Herein,
Cs-Cu-I
films
with
mixed-phase
been
prepared
vacuum
thermal
evaporation.
By
adjusting
proportion
evaporation
sources
(CsI
CuI),
optical
bandgaps
can
be
tuned
between
3.7
eV
4.1
eV.
This
absorption
cut-off
edge
exactly
both
ends
band,
indicating
its
potential
field
Finally,
based
on
Cs-Cu-I/n-Si
heterojunction
fabricated.
The
shows
good
selectivity
for
has
a
photoresponsivity
22
mA/W,
specific
detectivity
1.83*10
11
Jones,
EQE
over
8.7%
on/off
ratio
above
20
.
Chemical Reviews,
Journal Year:
2024,
Volume and Issue:
124(3), P. 768 - 859
Published: Jan. 19, 2024
Optoelectronic
devices
with
unconventional
form
factors,
such
as
flexible
and
stretchable
light-emitting
or
photoresponsive
devices,
are
core
elements
for
the
next-generation
human-centric
optoelectronics.
For
instance,
these
deformable
can
be
utilized
closely
fitted
wearable
sensors
to
acquire
precise
biosignals
that
subsequently
uploaded
cloud
immediate
examination
diagnosis,
also
used
vision
systems
human-interactive
robotics.
Their
inception
was
propelled
by
breakthroughs
in
novel
optoelectronic
material
technologies
device
blueprinting
methodologies,
endowing
flexibility
mechanical
resilience
conventional
rigid
devices.
This
paper
reviews
advancements
soft
technologies,
honing
on
various
materials,
manufacturing
techniques,
design
strategies.
We
will
first
highlight
general
approaches
fabrication,
including
appropriate
selection
substrate,
electrodes,
insulation
layers.
then
focus
materials
diodes,
their
integration
strategies,
representative
application
examples.
Next,
we
move
photodetectors,
highlighting
state-of-the-art
fabrication
methods,
followed
At
end,
a
brief
summary
given,
potential
challenges
further
development
of
functional
discussed
conclusion.
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
36(29)
Published: May 16, 2024
Deterministic
integration
of
phase-pure
Ruddlesden-Popper
(RP)
perovskites
has
great
significance
for
realizing
functional
optoelectronic
devices.
However,
precise
fabrications
artificial
perovskite
heterostructures
with
pristine
interfaces
and
rational
design
over
electronic
structure
configurations
remain
a
challenge.
Here,
the
controllable
synthesis
large-area
ultrathin
single-crystalline
RP
nanosheets
deterministic
fabrication
arbitrary
2D
vertical
are
reported.
The
exhibit
intriguing
dual-peak
emission
phenomenon
dual-band
photoresponse
characteristic.
Importantly,
interlayer
energy
transfer
behaviors
from
wide-bandgap
component
to
narrow-bandgap
modulated
by
comprising
quantum
wells
thoroughly
revealed.
Functional
nanoscale
photodetectors
further
constructed
based
on
heterostructures.
Moreover,
combining
characteristic
double-beam
irradiation
modes,
introducing
an
encryption
algorithm
mechanism,
light
communication
system
high
security
reliability
is
achieved.
This
work
can
greatly
promote
development
heterogeneous
technologies
perovskites,
could
provide
competitive
candidate
advanced
integrated
optoelectronics.
ACS Photonics,
Journal Year:
2024,
Volume and Issue:
11(3), P. 1252 - 1263
Published: Feb. 26, 2024
Conventional
photodetectors
(PDs)
sense
either
a
broad
waveband
light
or
selective
narrow
light,
which
is
plagued
by
indistinguishable
diverse
wavebands
and
not
competent
for
the
dual
task
of
information
transfer
encryption
in
optical
communication
with
an
open
transmitting
channel.
Dual-band
PDs
ability
to
two
discrete
lights
have
potential
remedy
drawbacks
single-band
realize
secure
straightforward
strategy.
However,
previous
reports
dual-band
usually
relied
on
multistacked
photosensitive
layers,
suffer
from
lattice
mismatched
interfaces
contacting
between
semiconductor
layers
complex
device
fabrication
processes.
Herein,
we
propose
novel
lattice-matched
single-crystal
perovskite
heterojunction
(SCPH)
through
facile
low-cost
liquid-phase
epitaxy
process.
The
fabricated
PD
structure
Au/MAPbCl3/Bi-MAPbBr3/Bi-MAPbI2.5Br0.5/MAPbI3/Au
senses
range
ultraviolet
(UV)
near-infrared
(NIR)
while
blinding
visible
between.
At
last,
chaos-based
double-encrypted
system
built
using
UV/NIR
band
SCPH
as
efficient
receiver
terminal,
where
valid
conveyed
UV
NIR
respectively,
further
superimposed
separately
encrypted
transmission.
This
work
provides
method
fabricate
visible-eliminating
offers
new
insights
into
security
without
relying
complicated
algorithms.
Traditional
optical
communication
systems
are
constrained
by
fixed
photoresponse
values
and
light
intensity,
significantly
impairing
the
potential
for
data
transmission
protection.
Here,
a
single-band
bipolar-response
perovskite
self-powered
photodetector
is
demonstrated
on
(PEA)2PbI4/BaTiO3/Si
heterojunction.
By
employing
BaTiO3
as
intrinsic
layer,
device
demonstrates
low
dark
current
order
of
10-12
A
at
5
V
bias.
When
functions
ferroelectric
variation
in
depolarization
field
not
only
achieves
multilevel
modulation
magnitude
but
also
reverses
sign.
Leveraging
bipolar
characteristics
device,
secure
system
has
been
developed,
featuring
dual-channel
signal
reception
specifically
designed
information
transmission.
One
channel
designated
receiving
encrypted
information,
while
other
receives
key
information.
The
needs
to
identify
positive
negative
input
signals
with
arbitrary
intensity
without
distinguishing
strength
values.
accurate
retrieval
transmitted
contingent
upon
application
an
encryption
algorithm,
thereby
enhancing
security
system.
This
work
provides
novel
perspectives
realization
more
reliable
systems.
physica status solidi (RRL) - Rapid Research Letters,
Journal Year:
2025,
Volume and Issue:
unknown
Published: March 24, 2025
Currently,
constructing
multiheterojunction
photodetectors
by
using
reasonable
band
arrangement
between
different
materials
is
an
effective
means
to
enhance
the
photodetector's
optical
response,
broaden
its
working
range,
and
reduce
response
time.
In
this
investigation,
a
novel
heterojunction
structure
of
Bi
2
O
3
/SnS–SnO
/p‐Si
(BSS)
fabricated
via
modified
two‐step
sol–gel
spin
coating
technique.
Comparative
analysis
with
original
SnS–SnO
binary
(BS)
heterojunctions
reveals
that
ternary
BSS
photodetector
demonstrates
broad‐spectrum
light
reduced
dark
current,
operating
within
wavelength
range
from
254
1200
nm.
Under
bias
voltage
−5
V
illumination
at
780
nm,
device
exhibits
photocurrent
1.42
×
10
A
low
current
−10
A,
yielding
impressive
switching
ratio
2.91
4
.
Additionally,
time
0.04
s,
which
123
times
faster
than
device.
Furthermore,
under
nm
illumination,the
responsivity
R
detection
sensitivity
are
measured
be
0.14
W
−1
1.13
12
Jones,
respectively.
These
findings
underscore
rational
alignment
pivotal
for
their
exceptional
performance
highlights
potential
advancement
as
broadband
high‐performance
photodetector.
