Advanced Optical Materials,
Journal Year:
2024,
Volume and Issue:
12(17)
Published: Feb. 25, 2024
Abstract
Far‐red
(FR)
region
(beyond
700
nm)
lighting
sources
possess
special
potential
for
plant
lighting.
However,
it
remains
a
challenge
to
obtain
high‐performance
Cr
3+
‐doped
FR
phosphors.
This
study
developed
phosphor,
Ca
1.8
Mg
1.2
Al
2
Ge
3
O
12
:Cr
(CMAGG:
),
using
the
cation
substitution
strategy.
Under
438
nm
blue
light
excitation,
phosphors
display
emission
centered
at
720
with
full
width
half
maximum
(FWHM)
of
91
nm.
Benefit
from
favorable
match
phytochrome
(P
fr
phosphor
is
combined
InGaN
chips
create
phosphor‐converted
light‐emitting
diode
(pc‐LED),
which
used
in
Italian
lettuce
growth
experiments
and
results
shown
15%
increase
fresh
weight
6.5%
dry
weight.
Notably,
supplemental
modulated
its
morphology.
The
this
will
be
useful
further
research
on
novel
meet
precise
spectral
requirements
growth.
Inorganic Chemistry,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 10, 2025
In
this
work,
Ca3WO6
(CWO)
phosphors
were
successfully
synthesized
using
a
high-temperature
solid-state
method,
exhibiting
an
anomalous
far-red/near-infrared
(FR-NIR)
emission
centered
at
685
nm.
The
origin
of
FR-NIR
is
confirmed
through
Raman
spectroscopy,
X-ray
photoelectron
spectroscopy
(XPS),
density
functional
theory
(DFT)
calculations,
and
heterovalent
cationic
substitution
(Y3+/Na+
→
Ca2+).
These
analyses
indicate
that
interstitial
oxygen
(Oi)
defects
within
the
lattice
are
primarily
responsible
for
emission.
Y3+
Ca2+
increases
concentration
Oi,
significantly
enhancing
intensity.
This
results
in
increase
internal
quantum
efficiency
(IQE)
increasing
from
12.8
to
90.9%,
realizing
efficient
self-activated
phosphors.
Furthermore,
CWO
demonstrate
unique
dual-band
characterized
by
blue
435
nm
endows
with
multifunctional
applications
plant
growth
lighting,
nondestructive
testing,
night
vision
fields.
Advanced Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 15, 2025
Abstract
Na
3
V
2
(PO
4
)
,
based
on
multi‐electron
reactions
between
3+
/V
4+
5+
is
a
promising
cathode
material
for
SIBs.
However,
its
practical
application
hampered
by
the
inferior
conductivity,
large
barrier
of
and
stepwise
phase
transition.
Herein,
these
issues
are
addressed
constructing
medium‐entropy
(Na
3.2
1.1
Ti
0.2
Al
Cr
Mn
Ni
0.1
ME‐NVP)
with
strong
ME─O
bond
highly
occupied
Na2
sites.
Benefiting
from
effect,
ME‐NVP
manifests
phase‐transition–free
reaction
mechanism,
two
reversible
plateaus
at
3.4
(V
4.0
),
small
volume
change
(2%)
during
+
insertion/extraction
processes,
as
confirmed
comprehensive
in/ex
situ
characterizations.
Moreover,
kinetics
analysis
illuminates
superior
diffusion
ability
ME‐NVP.
Thus,
realizes
remarkable
rate
capability
67
mA
h
g
−1
50C
long‐term
lifespan
over
10
000
cycles
(capacity
retention
81.3%).
Theoretical
calculations
further
illustrate
that
weak
binding
ion
in
channel
responsible
rapid
diffusion,
accounting
kinetics.
rigid
MEO
6
octahedral
feasible
rearrangement
ions
can
suppress
transition,
thus
endowing
an
ultrastable
cathode.
This
work
highlights
significant
role
engineering
advancing
output
voltage,
cycling
stability,
polyanionic
cathodes.
Inorganic Chemistry,
Journal Year:
2024,
Volume and Issue:
63(28), P. 12886 - 12893
Published: July 1, 2024
Inorganic
materials
doped
with
chromium
(Cr)
ions
generate
remarkable
and
adjustable
broadband
near-infrared
(NIR)
light,
offering
promising
applications
in
the
fields
of
imaging
night
vision
technology.
However,
achieving
high
efficiency
thermal
stability
these
NIR
phosphors
poses
a
significant
challenge
for
their
practical
application.
Here,
we
employ
crystal
field
engineering
to
modulate
characteristics
Cr3+-doped
Gd3Ga5O12
(GGG).
The
Gd3MgxGa5–2xGexO12
(GMGG):7.5%
Cr3+
(x
=
0,
0.05,
0.15,
0.20,
0.40)
emission
are
developed
through
cosubstitution
Mg2+
Ge4+
Ga3+
sites.
This
strategy
also
effectively
reduces
strength
around
ions,
which
results
enhancement
photoluminescence
(PL)
full
width
at
half-maximum
(fwhm)
from
97
165
nm,
alongside
red
shift
PL
peak
an
intensity
up
2.3
times.
Notably,
behaviors
is
improved.
demonstrate
potential
biological
tissue
penetration
vision,
as
well
exceptional
scintillation
performance
scintillator
imaging.
research
paves
new
perspective
on
development
high-performance
technology
light-emitting
diodes
(LEDs)
X-ray
applications.
Abstract
Narrow‐band
cyan‐emitting
materials
for
white
light‐emitting
diode
(wLED)
application
have
shown
great
potential
in
increasing
the
maximum
accessible
display
gamut
and
improving
color
rendering
of
full‐spectrum
healthy
lighting.
However,
discovery
novel
narrow‐band
cyan
emitters
with
excellent
luminescence
performances
remains
challenging.
Here,
an
ultra‐narrow‐band
Na
5
K
3
(Li
SiO
4
)
8
:Eu
2+
(N
phosphor
(λ
em
=
483
nm)
full
width
at
half
(FWHM)
only
18
nm
is
developed
from
some
typical
UCr
C
frameworks
phosphors
by
slightly
modifying
crystal
structure
symmetry.
Through
controllable
regulation
ratio
6
2
to
N
,
lattice
sites
forming
shoulder
peaks
are
further
squeezed
generate
narrowest
emission.
Moreover,
exhibits
low
photoluminescence
thermal
quenching
(90%@150
°C)
high
internal
quantum
efficiency
(IQE)
50%.
The
index
wLED
health
lighting
enhanced
92
94.
Using
this
short‐wavelength
emission
instead
a
part
blue
chip
can
effectively
prevent
“blue
hazard”.
This
work
provides
basic
principles
design
phosphors,
thus
achieving
their
applications
fields
eye‐friendly
display.
Abstract
Achieving
continuous
tunability,
high
efficiency,
and
outstanding
thermal
stability
of
near‐infrared
(NIR)
phosphors
remains
challenging
for
optoelectronic
device
fields.
To
address
this
issue,
a
strategy
is
proposed
based
on
the
substitution
both
cations
anions
in
intermediate
spinel
structure,
which
successfully
achieved
fine‐tuning
NIR
emission
Mg
1+y
Ga
2‐y
O
4‐y
F
y
:Fe
3+
with
prominent
optical
characteristics.
The
contains
new
luminescent
centers
random
O/F
coordination
constructed.
This
co‐substitution
promotes
further
inversion
cationic
sites
induces
atomic
disorder,
changing
crystal
environment
making
Fe
breakthrough
Laporte
selection
rule,
enabling
emissions
range
707–740
nm
broadening
full
width
at
half
maximum
by
30
nm.
Moreover,
1.15
1.85
3.85
0.15
phosphor
reached
quantum
yield
71.6%
presented
excellent
an
intensity
retention
81%
493
K.
fabricated
phosphor‐converted
light‐emitting
diodes
also
matched
well
photosensitive
pigment
P
fr
,
demonstrating
its
feasibility
plant
growth
lighting
applications.
Inorganic
luminescent
materials
hold
great
promise
for
optoelectronic
device
applications,
yet
the
limited
efficiency
and
poor
thermal
stability
of
oxide-based
deep-red
emitting
phosphors
hinder
advancement
plant
lighting
technologies.
Herein,
a
simple
compositional
engineering
strategy
is
proposed
to
stabilize
phase,
boost
external
quantum
(EQE)
enhance
stability.
The
chemical
modification
PO
Advanced Optical Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 17, 2025
Abstract
A
series
of
Eu
3+
‐activated
Sr
4
La
6
(SiO
)
Cl
2
(SLSCl)
phosphors
are
prepared
to
fulfill
the
requirements
plant
growth
and
immunity.
Upon
394
nm
excitation,
resulting
can
emit
intense
red
emission
from
,
which
their
intensities
sensitive
dopant
content
site
occupation.
When
occupies
2+
sites,
its
optimal
doping
contents
in
SLSCl
host
lattices
is
40
50
mol%,
respectively.
Moreover,
quantum
efficiency
thermal
stability
designed
also
greatly
dependent
on
taken
by
lattices.
Via
utilizing
as
red‐emitting
converters,
two
different
light‐emitting
diodes
(LEDs)
fabricated,
whose
bands
overlap
with
absorption
pigments,
enabling
feasibilities
growth.
Furthermore,
experiments
indicate
that
photosynthesis
be
significantly
improved
via
employing
packaged
LEDs
supplementary
lights.
Additionally,
enhance
resistance
N.
benthamiana
plants
against
viral
infection.
The
findings
do
not
only
propose
a
facile
route
manipulate
luminescence
properties
phosphors,
but
confirm
utilization
light
an
efficient
promote
resistance.