Ultrahigh‐Power Germanium Photodetector Enabling Amplifier‐Free Wireless Communication DOI

Zuhang Li,

Yang Shi,

Mingjie Zou

et al.

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 22, 2024

Abstract Photodetector (PD), an indispensable component in radio‐over‐fiber (RoF) systems, functions as interface between the optical fiber backbone and wireless radio branches. The power‐handling capability is paramount to determine both coverage linearity of RoF link, it predominantly constrained by space‐charge effect that limits output photocurrent. Consequently, electronic power amplifiers are required ensure reliable for end‐users, albeit at expense degraded signal linearity, increased energy consumption, bulky system. On other hand, increasing demand co‐integration with silicon microelectronics indicates CMOS‐compatible germanium‐silicon (Ge─Si) PDs hold significant promise. Herein, ultrahigh‐power Ge─Si PD designed implemented unprecedented high saturation photocurrent 471.4 mA a responsivity 1.12 A W −1 . remarkable high‐power performance achieved through enhancing absorption promoting photo‐generated carrier transit comprehensively. For proof‐of‐concept demonstration, amplifier‐free communication driven proposed PD, enabling range‐capacity product 20 m·Gb s , third‐order intermodulation 32.3 dBm 5 GHz, along real‐time video stream transmission. This work exhibits promising solution on‐chip photodetection, represents advancement toward high‐quality fiber‐wireless access network.

Language: Английский

Recent Developments in Organic Photodetectors for Future Industrial Applications: A Review DOI

J. Ajayan,

S. Sreejith,

Ajith Ravindran

et al.

Sensors and Actuators A Physical, Journal Year: 2025, Volume and Issue: unknown, P. 116459 - 116459

Published: March 1, 2025

Language: Английский

Citations

2
Wave‐Interference Photonic Crystals and Space Charge Engineering Enable Efficient Broadband Faint Light Detection in Organic/Inorganic Hybrid Photodetectors DOI Open Access
Yibo Zhang, Sara M. Almenabawy,

Gloria Vytas

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 25, 2025

Abstract Noise current, detectivity, quantum efficiency, and response speed are critical metrics in evaluating organic/inorganic photodiodes. Herein, these simultaneously advanced poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/native SiO x /n‐Si hybrid photodetectors, achieving excellent performance detecting broadband faint light. Wave‐interference photonic crystals, comprising periodic microstructured inverse pyramids with nanometer‐scale mesa widths, integrated into the Si absorber to effectively couple incident light for increased absorption, thereby balancing optics conformal contact coverage. The developed photodetector comprises a deep depletion region interfacial layer, enabling diffusion‐mitigated photocarrier transport effective charge collection, suppressing carrier tunneling processes low‐noise. An ultralow reverse dark current density of ≈2.46 × 10 −8 A cm −2 at −0.4 V is realized nanowatt‐level detection. showcases superlative properties among reported PEDOT:PSS–based inorganic heterojunctions, including external efficiency >≈80% from 340 960 nm (internal >≈90% 380 840 nm), detectivity >≈10 12 Jones 300 1140 nm, microsecond speed. This study provides practical insight combining high‐absorption microstructures space engineering development high‐performance photodetectors.

Language: Английский

Citations

1
Enhanced Exciton Delocalization in Organic Near‐Infrared Photodetectors via Solid Additive‐Mediated J‐Aggregation DOI Open Access

Jiawei Qiao,

Fengzhe Cui, Wenqing Zhang

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 19, 2025

Abstract Near‐infrared organic photodetectors (NIR‐OPDs) have emerged as increasingly significant in optoelectronics, offering unparalleled advantages for applications health monitoring and night vision. The development of self‐powered devices with low dark currents enhanced NIR sensitivity involves complex engineering that requires careful material selection, defect state density control, environmental consideration. In this study, an innovative approach is introduced utilizes solid additive (DIB) to induce improvements the J‐aggregation morphology exciton delocalization acceptor molecules. goal broaden response spectrum device augment its detection capabilities. key findings revealed exhibit electrostatic affinity acceptors, which facilitates their orderly face‐to‐face stacking controls π–π distance. These intermolecular interactions lead electron–hole pairs, reduced recombination, increased charge separation efficiency. Consequently, modified exhibited exceptional specific detectivity, exceeding 10 14 Jones across wavelength range 695–860 nm, thereby establishing a new standard photodetection. Overall, study successfully addressed compatibility challenges associated NIR‐OPDs, expanding potential various settings.

Language: Английский

Citations

1
Ultralow dark current in near-infrared organic photodetector via crosslinked conjugated polyelectrolyte hole-transporting layer DOI
Hoang Mai Luong, Sangmin Chae, Ahra Yi

et al.

Matter, Journal Year: 2024, Volume and Issue: 7(7), P. 2473 - 2489

Published: June 13, 2024

Language: Английский

Citations

6
Photo-crosslinking and layer-by-layer processed organic photodetectors with remarkably suppressed dark current DOI

Min Hun Jee,

Byoungwook Park, Ah Young Lee

et al.

Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: 490, P. 151624 - 151624

Published: April 25, 2024

Language: Английский

Citations

5
Effective Strategy for High‐Performance Organic Photodetectors with Significantly Suppressed Dark Current and Improved Responsivity DOI
Shuai Zhang, Tong Liu, Jianxiao Wang

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: 12(19)

Published: May 11, 2024

Abstract Organic photodetectors (OPDs) have attracted immense interest as solution‐processable optical signal‐capturing devices due to their various advantages, such adjustable response range, excellent weak light response, lightweight, flexibility, and ease of processing on diverse substrates. Low dark current density ( J d ) high responsivity R are key requirements necessary for achieving a specific detectivity D *). Here, an effective strategy preparing high‐performance OPDs with potential micro p‐i‐n structure by introducing insulating poly(aryl ether) (PAEN) into the organic photosensitive layer is reported. The PM6:PC 71 BM‐based capable significantly suppressing while increasing , which can be attributed multiple optimizations morphology charge transport caused addition PAEN. As result, value (3.63 × 10 −10 A cm −2 two orders magnitude lower than that device without PAEN (1.00 −8 at −1 V bias. Combined increased 0.376 W optimized achieves *of 3.45 13 Jones (−1 620 nm). demonstrate performance comparable commercial Si (Hamamatsu S1133), paving way direct market development this cost‐effective photodetection technology.

Language: Английский

Citations

5
n-Type polythiophene as a hole-blocking layer in inverted organic photodetectors DOI Creative Commons
Jiahui Wang,

Sihui Deng,

Jun Ma

et al.

Giant, Journal Year: 2024, Volume and Issue: 19, P. 100291 - 100291

Published: May 28, 2024

Organic photodetectors (OPDs) own unique advantages such as light weight, flexibility, low production cost, tunable detection wavelength, and thus are promising for a variety of applications. The lack hole-blocking layer (HBL) materials impedes the reduction dark current density enhancement performance OPDs. Herein, we employed an n-type polythiophene n-PT1 HBL material inverted specific solubility in o-dichlorobenzene facilitates solution processing enables multilayer device fabrication. ultradeep-lying highest occupied molecular orbital energy level ensures large hole injection barrier between cathode active that suppresses current. As result, compared to control devices without n-PT1, OPD with demonstrate two-order-of-magnitude one-order-of-magnitude increase detectivity. To best our knowledge, this is first processable

Language: Английский

Citations

4
High Detectivity Ternary Near-Infrared Organic Photodetectors Based on Double Electron Transport Layer for Health Monitoring DOI

Jingchong Liang,

Honglin Wang,

Zhangmin Yin

et al.

Journal of Materials Chemistry C, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

The incorporation of the third component PBDTDPP and utilization PFN-Br/ZnO double electron transport layer have enhanced performance organic photodetectors, thereby improving signal resolution in health monitoring applications.

Language: Английский

Citations

0
Self‐Assembled Monolayer Assisted Biphasic Heterojunction Organic Photodiode for Panel‐Level Manufacturing of Active‐Matrix Optical Imager DOI Open Access
Tong Shan, Jun Li,

Qing Bai

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 31, 2025

Abstract Organic photodiodes (OPDs) have shown great promises for large‐area optical imagers attributed to ease of processing and tunable performance in a wide wavelength range. A biphasic heterojunction (BPHJ) OPD design, having bulky structure on top monophasic donor layer, is proposed this work. The BPHJ spontaneously formed self‐assembled monolayer (SAM) treated indium tin oxide surface by depositing the acceptor layers sequentially. fabricated OPDs present significantly reduced dark current meanwhile improved specific detectivity with larger linear dynamic range faster response compared conventional devices. This strategy proved be universal various donor/acceptor combinations, covering from visible near‐infrared. Such well compatible back‐end‐of‐line integration processes TFT backplane semiconductor display fab. An active‐matrix imager an ultralow detection limit can reproduce ideal image quality under ultra‐low light intensity nW cm −2 level.

Language: Английский

Citations

0
Stable Unencapsulated Near‐Infrared Organic Photodetectors DOI Open Access
Yingze Zhang,

Xiaoyu Zhu,

Dehai Yu

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 17, 2025

Abstract Stability is crucial for the practical applications of organic photodetectors (OPDs). In this work, it reported that near‐infrared (NIR) OPDs without device encapsulation can exhibit excellent stability at ambient conditions. The unencapsulated a T 90 lifetime, which defined as time required responsivity to decay 90% its initial value, exceeding 1000 h conditions under 600 lux light irradiation. attributed all‐fused‐ring skeleton acceptor in active layer and hydrophobicity crosslinked cathode interlayer. addition, specific detectivity 1.65 × 10 13 Jones 920 nm −0.1 V bias, among highest so far NIR OPDs. This work demonstrates promising future applications.

Language: Английский

Citations

0