Carrier Recirculation Induced Ultrasensitive Photodetectors of InSe/CdTe Heterostructure Featuring an Interfacial Holes Layer DOI Open Access

Xuefeng Zhao,

Dongyang Zhao, Hu Tao

et al.

Small, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 18, 2024

Photodetectors (PDs) based on mix-dimensional heterojunctions (MDHJs) built from 2D layered materials and covalent-bonded semiconductors show the prospect of compensating intrinsic weakness to realize their full potential. However, there is an open issue improve temporal response PDs while maintaining high gain sensitivity. Herein, photoconductive type MDHJs with InSe CdTe thin film are designed fabricated in which active layer medium one. The conductivity improved by exceeding 50 times led formation p-p heterojunction because that interfacial hole accumulation at side a built-in field one formed. Benefiting synergistic function photogating effects, carrier recirculation induced responsitivity, detectivity, external quantum efficiency orders magnitude increment reach 4.31 × 10

Language: Английский

Research progress on two-dimensional indium selenide crystals and optoelectronic devices DOI
Dan Zheng, Peng Chen,

Yi Liu

et al.

Journal of Materials Chemistry A, Journal Year: 2024, Volume and Issue: 12(28), P. 16952 - 16986

Published: Jan. 1, 2024

2D InSe, a novel semiconductor with unique and excellent performance. It is pivotal for designing multifunctional devices future optoelectronics, sensors, flexible electronics, marking significant advancement in materials science.

Language: Английский

Citations

4
A suspended InSe membrane-based metal-semiconductor junction with excellent performance via flexoelectricity DOI

Jiyan Wu,

Ze He,

Guihong Zuo

et al.

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101701 - 101701

Published: March 1, 2025

Language: Английский

Citations

0
A Suspended InSe Membrane-Based Metal-Semiconductor Junction with Excellent Performances via Flexoelectricity DOI
Junjie Wu, Ze He,

Guihong Zuo

et al.

Published: Jan. 1, 2025

Language: Английский

Citations

0
Optoelectronic synapses realized on large scale continuous MoSe2 with Te doping induced tunable memory function DOI

Yongqi Hu,

Yunan Lin,

Xutao Zhang

et al.

Nanoscale Horizons, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Te doping facilitates the formation of Se vacancies in wafer-scale MoSe 2 , thereby enabling memory functions for optoelectronic synapses via trapping photocarriers.

Language: Английский

Citations

0
Simulating and Implementing Broadband van der Waals Artificial Visual Synapses Based on Photoconductivity and Pyroconductivity Mechanisms DOI
Dan Qiu, Shuaizhi Zheng, Pengfei Hou

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 23, 2024

With advancements in artificial neural networks and information processing technology, a variety of neuromorphic synaptic devices have been proposed to emulate human sensory systems, with vision being crucial source. Moreover, as practical applications become increasingly complex, the need for multifunctional visual synapses expand application range becomes urgent. This study introduces MoS

Language: Английский

Citations

0
Carrier Recirculation Induced Ultrasensitive Photodetectors of InSe/CdTe Heterostructure Featuring an Interfacial Holes Layer DOI Open Access

Xuefeng Zhao,

Dongyang Zhao, Hu Tao

et al.

Small, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 18, 2024

Photodetectors (PDs) based on mix-dimensional heterojunctions (MDHJs) built from 2D layered materials and covalent-bonded semiconductors show the prospect of compensating intrinsic weakness to realize their full potential. However, there is an open issue improve temporal response PDs while maintaining high gain sensitivity. Herein, photoconductive type MDHJs with InSe CdTe thin film are designed fabricated in which active layer medium one. The conductivity improved by exceeding 50 times led formation p-p heterojunction because that interfacial hole accumulation at side a built-in field one formed. Benefiting synergistic function photogating effects, carrier recirculation induced responsitivity, detectivity, external quantum efficiency orders magnitude increment reach 4.31 × 10

Language: Английский

Citations

0