Polarization‐Sensitive Momentum‐Matching Interlayer Excitons for Infrared Photodetection DOI Open Access

Zelin Che,

Wenjie Deng, Jingzhen Li

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 5, 2024

Abstract 2D materials hold potential for developing low‐cost, high‐performance broadband polarized infrared photodetectors. However, the development of photodetectors is largely constrained by fixed bandgap spectral (cutoff wavelength) limitations available semiconductors. Here, an approach presented that leverages anisotropic interlayer excitons (IEXs) within a type‐II van der Waals heterojunction, achieving polarization photoresponse beyond intrinsic limits its constituent By constructing heterojunctions using CrPS 4 and ReS 2 , unique band alignment, enabling strong optical excitation achieved through sub‐bandgap, which lower than bandgaps both . The heterojunction exhibits responsivity 0.3 A W −1 ratio 1.3 at incident photon energy 0.8 eV, comparable to naturally with bandgaps. Additionally, IEXs demonstrated dual‐band detection introducing /CrPS /MoS distinct inte rlayer sub‐bandgaps. This flexible design offers new platform multi‐dimensional sensing on‐chip optoelectronic applications.

Language: Английский

Band Alignment Semimetal Heterojunction‐Based Ultrabroadband Photodetector for Noncontact Gesture Interaction with Low Latency DOI

Yunlu Lian,

Shengwang Jia,

He Yu

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 20, 2024

Abstract Non‐contact gesture recognition and interaction (NGRI) revolutionizes the natural user interface, fundamentally transforming human interactions with daily‐use technology. Conventional NGRI systems frequently encounter obstacles such as pronounced latency environmental disturbances, including humidity or lighting conditions, resulting in compromised system fluidity robustness. This study highlights utilization of silicon‐based semimetal heterojunction photodetectors for precise seamless human‐machine interaction. Through application band alignment theory sophisticated TCAD simulation, barriers are successfully optimized by fine‐tuning parameters Si doping concentration thickness. By strategically aligning vertical material growth implementing configuration, a room temperature detector exceptional sensitivity (specific detectivity ( D* ): ≈10 11 Jones), ultra‐broad spectral range (405–10600 nm), rapid response time (≈ µs) is achieved. Harnessing its distinguished speed detecting infrared radiation, conjunction an advanced spatial‐temporal comparison algorithm multi‐channel high‐frequency sampling processing design, low latency, high precision, minimal energy consumption, versatility across diverse scenarios has been developed. The results pave way non‐contact sensor design may further enhance practicality experience systems.

Language: Английский

Citations

5
Stable Self-Powered Broadband PtSe2/Si Pin Infrared Photodetector Based on a High-Quality Ultrapure Intrinsic Si Film Exfoliated by Si/SOI Wafer Bonding DOI
Xiaojia Xu,

Shaoqiu Ke,

Tian Ji

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 2, 2025

Two-dimensional (2D) PtSe

Language: Английский

Citations

0
Ti3C2Tx/silicon nanowire array heterojunction visible light enhanced broadband photodetector based on leaky mode resonance DOI
Jie Yu, Zhiyu Huang, J.M. Gao

et al.

Nanoscale, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Silicon-based broadband photodetectors (BBPDs) are extensively utilized in both the civilian and military fields due to their advanced fabrication processes superior optoelectronic properties. However, most silicon-based BBPDs exhibit significantly reduced response visible range compared near-infrared band, which limits further application systems. In this study, a visible-light-enhanced Ti3C2Tx MXene/Si NW heterojunction BBPD is constructed by employing small diameter silicon nanowire (Si NW) array. MXene exhibits unique electrical optical properties, especially high conductivity transparency, enhance performance of device. Device analysis revealed that photoresponse device light band increases as Si NWs gradually decreases from 200 nm 100 nm. Furthermore, with 120 achieves responsivity ∼520 mA W-1 under 660 illumination, comparable (532 at 910 nm). Theoretical simulations suggest photoelectric characteristic linked leaky mode resonances (LMRs) small-diameter NWs. These results demonstrate potential building blocks for low-cost high-performance future.

Language: Английский

Citations

0
In Situ Construction of Flexible Low‐Dimensional van der Waals Material Photodetectors DOI Creative Commons
Yu Chen,

Huanrong Liang,

Xinyi Guan

et al.

Advanced Physics Research, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 21, 2025

Abstract By virtue of the excellent flexibility, conformability, portability, and aesthetics, wearable photodetectors have attracted worldwide research enthusiasm over past decade. However, traditional bulk covalent semiconductors are difficult to be applied due their pronounced rigidity. Profiting from self‐passivated surface, carrier mobility, strong light‐harvesting ability, low‐dimensional van der Waals materials (LDvdWMs) shown immense potential for application in optoelectronic devices. Nevertheless, preparation flexible through exfoliation/transfer or solution methods has suffered severe drawbacks spanning low production yield, contamination, uncompetitive device properties. Therefore, researchers been committed exploring alternative strategies. In response this, current review systematically summarizes latest advancements directly constructing LDvdWM on substrates, including developing low‐melting‐point targeted materials, electron‐beam‐enabled crystallization, photonic modified chemical vapor deposition, pulsed‐laser with elaboration fundamental mechanisms enabling situ deposition LDvdWMs. Finally, tricky challenges standing way this field epitomized solutions addressing them proposed. On whole, underscores distinctive pathways development photodetectors, which probably usher next‐generation technologies.

Language: Английский

Citations

0
Thermoelectric Conversion Eutectogels for Highly Sensitive Self-Powered Sensors and Machine Learning-Assisted Temperature Identification DOI

Lingshuang Kong,

Huiming Ning, Miao Du

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: March 6, 2025

Endowing flexible sensors with self-powering capabilities is of significant importance. However, the thermoelectric conversion gels reported so far suffer from limitations insufficient flexibility, signal distortion under repetitive deformation, and comprehensive performance, which seriously hinder their wide application. In this work, we designed prepared eutectogels by an ionic liquid a polymerizable deep eutectic solvent (PDES), exhibit good mechanical properties, adhesion, excellent response performance. The Seebeck coefficient (Si) can reach 30.38 mV K-1 at temperature difference 10 K. To amplify self-powered performance individual gel units, assembled them into arrays further sensors. combination K-means clustering algorithm machine learning filter out noise traditional improve consistency signals, thereby enabling prediction absolute conditions or 20 K difference. This study also demonstrates potential application these in sensing.

Language: Английский

Citations

0
Au/Germanium1 − xBismuthx Schottky Diode for Self‐Driven, High Detectivity, and High Responsivity Near‐Infrared Broadband Photodetectors DOI
Youbin Zheng, Dainan Zhang, Shuaicheng Liu

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 1, 2025

Abstract Metal‐semiconductor Schottky diode structures play a crucial role in the development of optoelectronic devices. In recent years, photodiode‐based photodetectors utilizing molybdenum disulfide (MoS 2 ) have garnered significant attention and are among most extensively researched options. However, MoS has notable limitation: its low light absorption near‐infrared (NIR) spectrum results reduced responsivity compared to visible spectrum. To address this issue achieve high responsivity, detectivity, broad spectral response for NIR photodetectors, GeBi‐based Au/Ge 1 − x Bi photodetector first time is proposed. By varying doping concentration (x) subsequently regulating Ge films band, 0.874 0.126 identified fabricated with an optimal 12.6%. Testing revealed that within 800–1200 nm wavelength range, exhibits range 2.47 –519.7 AW −1 detectivity 3.56 × 10 11 Jones 1.6 13 Jones. contrast diode‐based which typically respond narrow optical spectrum, demonstrate maintains across entire 800 1200 range.

Language: Английский

Citations

0
Polarization‐Sensitive Momentum‐Matching Interlayer Excitons for Infrared Photodetection DOI Open Access

Zelin Che,

Wenjie Deng, Jingzhen Li

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 5, 2024

Abstract 2D materials hold potential for developing low‐cost, high‐performance broadband polarized infrared photodetectors. However, the development of photodetectors is largely constrained by fixed bandgap spectral (cutoff wavelength) limitations available semiconductors. Here, an approach presented that leverages anisotropic interlayer excitons (IEXs) within a type‐II van der Waals heterojunction, achieving polarization photoresponse beyond intrinsic limits its constituent By constructing heterojunctions using CrPS 4 and ReS 2 , unique band alignment, enabling strong optical excitation achieved through sub‐bandgap, which lower than bandgaps both . The heterojunction exhibits responsivity 0.3 A W −1 ratio 1.3 at incident photon energy 0.8 eV, comparable to naturally with bandgaps. Additionally, IEXs demonstrated dual‐band detection introducing /CrPS /MoS distinct inte rlayer sub‐bandgaps. This flexible design offers new platform multi‐dimensional sensing on‐chip optoelectronic applications.

Language: Английский

Citations

2