Improving the Operational Stability of the Sb2Se3-Based Self-Powered Photodetector via Interfacial Engineering DOI
Jianpeng Li, Wei Cheng, Zixiu Cao

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: May 24, 2025

Originating from photovoltaic devices, self-powered photodetectors (SPPDs) have low power consumption and show promising applications in photoelectric imaging optical communications. Many efforts been devoted to improving their photodetection performances, including responsivity, detectivity, response time. However, work on operational stability, one of the key parameters applied PDs, is still rare. Here, using an interfacial engineering method, we improve stability representative Sb2Se3-based SPPD. The Sb2O3 modification layer at interface between Sb2Se3 TiO2 layers characterized systematically. With optimized fabrication layer, under both air ambient underwater conditions significantly enhanced. Moreover, performances SPPD, time, are improved 0.45 A/W, 2.70 × 1013 Jones, 81.5/75.0 ns, respectively. Specifically, without encapsulation, photoresponse devices vary by only around ten percent after working underwater. Our provides a facile effective way modify properties heterostructure

Language: Английский

Improving the Operational Stability of the Sb2Se3-Based Self-Powered Photodetector via Interfacial Engineering DOI
Jianpeng Li, Wei Cheng, Zixiu Cao

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: May 24, 2025

Originating from photovoltaic devices, self-powered photodetectors (SPPDs) have low power consumption and show promising applications in photoelectric imaging optical communications. Many efforts been devoted to improving their photodetection performances, including responsivity, detectivity, response time. However, work on operational stability, one of the key parameters applied PDs, is still rare. Here, using an interfacial engineering method, we improve stability representative Sb2Se3-based SPPD. The Sb2O3 modification layer at interface between Sb2Se3 TiO2 layers characterized systematically. With optimized fabrication layer, under both air ambient underwater conditions significantly enhanced. Moreover, performances SPPD, time, are improved 0.45 A/W, 2.70 × 1013 Jones, 81.5/75.0 ns, respectively. Specifically, without encapsulation, photoresponse devices vary by only around ten percent after working underwater. Our provides a facile effective way modify properties heterostructure

Language: Английский

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