Fabrication of Conjugated Conducting Polymers by Chemical Vapor Deposition (CVD) Method

Nanomaterials, Journal Year: 2025, Volume and Issue: 15(6), P. 452 - 452

Published: March 16, 2025

Chemical vapor deposition (CVD) is a highly adaptable manufacturing technique used to fabricate high-quality thin films, making it essential across numerous industries. As materials fabrication processes progress, CVD has advanced enable the precise of both inorganic 2D materials, such as graphene and transition metal dichalcogenides, polymeric offering excellent conformality nanostructure control on wide range substrates. Conjugated conducting polymers have emerged promising for next-generation electronic, optoelectronic, energy storage devices due their unique combination electrical conductivity, optical transparency, ionic transport, mechanical flexibility. Oxidative (oCVD) involves spontaneous reaction oxidant monomer vapors upon adsorption onto substrate surface, resulting in step-growth polymerization that commonly produces or semiconducting polymer films. oCVD gained significant attention its ability conjugated under vacuum conditions, allowing over film thickness, doping levels, engineering. The low moderate temperature method enables direct integration films thermally sensitive substrates, including plants, paper, textiles, membranes, carbon fibers, graphene. This review explores fundamentals process vacuum-based manufacturing, while also highlighting recent advancements

Language: Английский

Core/shell 1T/2H-MoS2 nanoparticle induced synergistic effects for enhanced hydrogen evolution reaction

Journal of Colloid and Interface Science, Journal Year: 2025, Volume and Issue: 687, P. 851 - 859

Published: Feb. 14, 2025

Language: Английский

940 nm Micro‐Light‐Emitting Diode Fabricated on Industry‐Compatible 300 mm Si (100) Substrate by Metal–Organic Chemical Vapor Deposition

Advanced Photonics Research, Journal Year: 2025, Volume and Issue: unknown

Published: April 25, 2025

III‐V light‐emitting diodes (LEDs) have been attracting much interest due to their ability cover a large spectrum of interesting wavelength for various applications. However, incompatibility with integration on Si platforms compatible complementary metal‐oxide‐semiconductor standards makes high mass production challenging task. Herein, the fabrication 940 nm micro‐LED 300 mm wafers is reported. The active zone based InGaAs/AlGaAs multiquantum wells epitaxially grown by metal–organic chemical vapor deposition two types buffers, themselves substrates: 500 thick GaAs and 700 Ge bilayers. Very results obtained both structures in terms external quantum efficiency (EQE), example, about % %, that is, 1/3rd 1/15th reference EQE bulk substrates. These can easily be improved. Such demonstration offers very promising roadmap monolithic μ‐LED platforms.

Language: Английский