Regulation of the Charge Carrier Dynamics in Antimony Selenide Thin‐Film Solar Cells Based on the Effective Diffusion of Ions at the Heterojunction Interface DOI

Tingyu Zhang,

Yusheng Yang, Junjie Dong

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 19, 2024

Abstract Antimony selenide (Sb 2 Se 3 ) is regarded as a next‐generation material for high‐efficiency photovoltaic applications due to its favorable bandgap, high absorption coefficient, carrier mobility, and stability. Nonetheless, cadmiun sulfide (CdS) has low short‐wavelength transmittance, which limits photon utilization, the suboptimal band alignment in CdS/Sb heterojunction causes significant interface recombination. In this study, simple lithium‐ion doping method presented report dual enhancement effects of lithium ions on CdS Sb layers first time. Lithium improve layer by allowing larger grain sizes, reduces roughness, increase transmittance electron transport layer. At same time, lightweight Li diffuse more easily through into layer, resulting improved orientation, lower defect density, longer lifetime. Furthermore, with changes junction from “cliff‐like” “spike‐like” configuration, improving reducing recombination near interface. Ultimately, benefits Li‐ion doping, champion device obtained have V OC 0.462 V, J SC 30.86 mA cm −2 , an FF 65.46%, efficiency 9.33%, representing 15.8% over undoped device.

Language: Английский

Recent Advances and Prospects of Solution‐Processed Efficient Sb2S3 Solar Cells DOI
Junwei Chen, Gaoyang Li, Zhiheng Xu

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(18)

Published: Jan. 2, 2024

Abstract Solar cells comprising earth‐abundant and non‐toxic elements with applicable bandgaps high absorption coefficients have attracted considerable interest over the past several decades are important devices for addressing future demand clean renewable energy. Antimony sulfide (Sb 2 S 3 ) crystal material effectively meets these requirements owing to its suitable bandgap, coefficient, electron hole mobilities, earth abundance, excellent stability. Solution‐processed Sb films essential facilitate fabrication of low‐cost, large‐scale, high‐efficiency photovoltaic devices, but suffer from shortcomings large intrinsic defects, interfacial barrier, atomic mismatch, uncontrollable film thickness, orientation. In this review, a systematic overview fundamental properties solution‐processed materials is presented, then interface engineering, defect passivation control strategies, orientation modulation methods, device structure, performance solar focused, highlighting primary advancements major challenges based on technology. Finally, creative perspectives constructive innovation strategies research provided, indicating roadmap practical application other inorganic semiconductor heterojunction thin cells.

Language: Английский

Citations

14
Rapid Thermal Selenization Enhanced Efficiency in Sb2Se3 Thin Film Solar Cells with Superstrate Configuration DOI
Al Amin,

Kaiji Zhao,

Kausar Khawaja

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 19, 2025

Antimony selenide (Sb2Se3) is a promising material for solar energy conversion due to its low toxicity, high stability, and excellent light absorption capabilities. However, Sb2Se3 films produced via physical vapor deposition often exhibit Se-deficient surfaces, which result in carrier recombination poor device performance. The conventional selenization process was used address selenium loss cells with substrate configuration. this traditional method not suitable superstrated devices the window layer buried underneath absorber layer, as it can lead significant diffusion of into damage device. In work, we have demonstrated rapid thermal (RTS) technique that effectively selenize while preventing S from CdS layer. RTS significantly reduces transport resistance achieve highest efficiency 8.25%. Overall, presents approach enhancing low-dimensional chalcogenide thin emerging superstrate cell applications.

Language: Английский

Citations

1
Critical Review on Crystal Orientation Engineering of Antimony Chalcogenide Thin Film for Solar Cell Applications DOI Creative Commons
Ke Li, Rongfeng Tang,

Changfei Zhu

et al.

Advanced Science, Journal Year: 2023, Volume and Issue: 11(2)

Published: Nov. 8, 2023

Abstract The emerging antimony chalcogenide (Sb 2 (S x Se 1−x ) 3 , 0 ≤ 1) semiconductors are featured as quasi‐1D structures comprising 4 S(e) 6 n ribbons, this structural characteristic generates facet‐dependent properties such directional charge transfer and trap states. In terms of carrier transport, proper control over the crystal nucleation growth conditions can promote preferentially oriented favorable planes, thus enabling efficient electron transport along ribbons. Furthermore, an in‐depth understanding origin impact orientation Sb films on performance corresponding photovoltaic devices is expected to lead a breakthrough in power conversion efficiency. fact, there many studies colloidal nanomaterials. However, synthesis thin with controlled facets has recently been focus optoelectronic device applications. This work summarizes methodologies that applied fabrication films, including treatment strategies developed for engineering each process. mechanisms thoroughly analyzed. An outlook perspectives future development solar cells based recent research issues finally provided.

Language: Английский

Citations

20
Effect of substrate temperature on structure, morphology and optical properties of Sb2Se3 thin films fabricated by chemical-molecular beam deposition method from Sb and Se precursors for solar cells DOI
T. M. Razykov, A. Bosio,

K.M. Kouchkarov

et al.

Thin Solid Films, Journal Year: 2024, Volume and Issue: 791, P. 140218 - 140218

Published: Jan. 13, 2024

Language: Английский

Citations

4
8.2%-Efficiency hydrothermal Sb2S3 thin film solar cells by two-step RTP annealing strategy DOI
Hui Deng, Xinxin Feng,

Qiqiang Zhu

et al.

Science China Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 30, 2024

Language: Английский

Citations

4
Cs+‐Induced Se/S Ratio Variation to Regulate Energy Band Structure for Efficient Sb2(S,Se)3 Bulk Heterojunction Solar Cells DOI
Zhiheng Xu, Junwei Chen, Gaoyang Li

et al.

Small, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 9, 2025

As an emerging photovoltaic material, antimony selenosulfide (Sb2(S,Se)3) has attracted considerable attention and research enthusiasm. However, the current solution-processed Sb2(S,Se)3 layers suffer from severe unfavorable energy band structure problems attributed to vertical gradient-variable Se/S atomic ratio, making it a challenging prospective subject. Herein, novel convenient alkali metal Cs+-induced ratio variation strategy been developed for first time regulate through hydrothermal-processed CdS nanorod-arrays (NAs)/Sb2(S,Se)3 bulk heterojunction (BHJ) films. The regulation narrows Se-elemental concentration gradient distribution adjusting effectively in longitudinal CdS-NAs/Sb2(S,Se)3 BHJ This generates favorable structure, contributing rapid charge separation extraction of photogenerated carriers BHJ. Meanwhile, not only passivates defect-state enhances crystal size film, bust also extend carrier lifetime devices. resulting Cs-Sb2(S,Se)3 devices exhibit impressing power conversion efficiency (η) 8.23%, highest one currently available solar cells. study will undoubtedly facilitate development efficient devices, other similar inorganic semiconductor

Language: Английский

Citations

0
Nanowire Morphology Control in Sb Metal-derived Antimony Selenide Photocathodes for Solar Water Splitting DOI Creative Commons
Zhenbin Wang, Yongping Gan, Erin Service

et al.

Journal of Materials Chemistry A, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Sb 2 Se 3 photocathode performance improves by tuning substrate temperature during metal deposition. Thinner nanorods result in reduced charge recombination, enhancing photocurrent restricting transport the hk 0 direction.

Language: Английский

Citations

0
Fabrication process analysis on Sb2(S Se1-)3-based material properties and solar cell performance via machine learning DOI
A. Olimov, T. M. Razykov, К. M. Kuchkarov

et al.

Thin Solid Films, Journal Year: 2025, Volume and Issue: unknown, P. 140660 - 140660

Published: March 1, 2025

Language: Английский

Citations

0
Morphology and property tuning in ZnO–Ni hybrid metamaterials in vertically aligned nanocomposite (VAN) form DOI Creative Commons

Nirali A. Bhatt,

Lizabeth Quigley, Shiyu Zhou

et al.

Nanoscale Advances, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

ZnO thin films have attracted significant interest in the past decades owing to their unique wide band gap properties, piezoelectric non-linearity and plasmonic properties.

Language: Английский

Citations

0
Reaction Kinetics Regulation Suppressed Carrier Recombination Loss for High‐Efficient Solution‐Based Antimony Selenosulfide Photovoltaic Devices DOI

Boyang Fu,

Jun Xiong,

Tianhua Jv

et al.

Advanced Energy Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 2, 2025

Abstract Carrier recombination loss within the emerging antimony selenosulfide (Sb 2 (S,Se) 3 ) photovoltaic devices is a critical factor limiting performance. Herein, reaction kinetics regulation strategy reported to simultaneously passivate deep‐level intrinsic defect and inhibit oxide impurities in Sb absorber with help of sodium borohydride (SB). The SB, on one hand due alkaline feature, can significantly promote decomposition selenourea Se formation, eliminating S1 defects reducing V S defects, other hand, owing property, restore SbO + ions 3+ , thus inhibiting O formation improving heterogeneous nucleation preferable [hk1] orientation. These collective influences have remarkably suppressed carrier strengthened collection optimal band alignment. Consequently, high‐efficient an efficiency 10.62% (0.0684 cm are gained, which comparable latest‐recorded value 10.7% (0.0389 ). This work provides feasible method for suppressing Sb‐based chalcogenide materials supplies precious instruction preparing high‐performance optoelectronic devices.

Language: Английский

Citations

0