Free Carrier Auger–Meitner Recombination in Monolayer Transition Metal Dichalcogenides DOI
J. Hader, Jerome V. Moloney

Nano Letters, Journal Year: 2024, Volume and Issue: 25(1), P. 284 - 290

Published: Dec. 27, 2024

Microscopic many-body models based on inputs from first-principles density functional theory are used to calculate the carrier losses due free Auger–Meitner recombination (AMR) processes in Mo- and W-based monolayer transition metal dichalcogenides as a function of density, temperature, dielectric environment. Despite exceptional strength Coulomb interaction two-dimensional materials, AMR found be similar magnitude those conventional III–V-based quantum wells for same wavelengths. Unlike case III–V show nontrivial dependencies fact that bandgap renormalizations order hundreds millielectronvolts can bring higher bands into or out resonance with optimal energy level transition, approximately one lowest band. Similar behaviors temperature screening.

Language: Английский

Control of Hybrid Exciton Lifetime in MoSe2/WS2 Moiré Heterostructures DOI Creative Commons
Haowen Xu,

Jiangcai Wang,

Huan Liu

et al.

Advanced Science, Journal Year: 2024, Volume and Issue: unknown

Published: July 5, 2024

Abstract Hybrid excitons, characterized by their strong oscillation strength and long lifetimes, hold great potential as information carriers in semiconductors. They offer promising applications exciton‐based devices circuits. MoSe 2 /WS heterostructures represent an ideal platform for studying hybrid but how to regulate the exciton lifetime has not yet been explored. In this study, layer hybridization is modulated applying electric fields parallel or antiparallel dipole moment, enabling us from 1.36 4.60 ns. Furthermore, time‐resolved photoluminescence decay traces are measured at different excitation power. A annihilation rate of 8.9 × 10 −4 cm s −1 obtained fitting. This work reveals effects power on excitons 1.5° moiré heterostructures, which play important roles high quantum yield optoelectronic based transition‐metal dichalcogenides heterostructures.

Language: Английский

Citations

4
Highly Tunable Moiré Superlattice Potentials in Twisted Hexagonal Boron Nitrides DOI Creative Commons

Kehui Han,

Minhyun Cho,

Taehyung Kim

et al.

Advanced Science, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 8, 2024

Moiré superlattice of twisted hexagonal boron nitride (hBN) has emerged as an advanced atomically thin van der Waals interfacial ferroelectricity platform. Nanoscale periodic ferroelectric moiré potentials in hBN allow the hosting remote Coulomb to adjacent 2D materials. Therefore, new strategies for engineering length, angle, and potential strength are essential developing programmable quantum Here, it demonstrates realization hBN-based platforms visualizes domains properties using Kelvin probe force microscopy (KPFM). Also, regular large area is reported. It offers possibility reproduce uniform structures with precise control piezo stage stacking heat annealing. cumulative multi-ferroelectric polarization multi-level multiple angle mismatched interfaces. Additionally, observes quasi-1D anisotropic show highest resolution analysis local built-in strain between layers compared conventional methods. Furthermore, in-situ manipulation demonstrated femtosecond pulse laser, which results optical phonon-induced atomic displacement at The pave way develop precisely investigate strongly correlated physics.

Language: Английский

Citations

4
Type-I and type-II interfaces in a MoSe2/WS2 van der Waals heterostructure DOI
Neema Rafizadeh, G. S. Agunbiade, Ryan J. Scott

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(4)

Published: Jan. 27, 2025

We report experimental evidence that MoSe2 and WS2 allow the formation of type-I type-II interfaces, according to thickness former. Heterostructure samples are obtained by stacking a monolayer flake on top contains regions from one four layers. Photoluminescence spectroscopy transient absorption measurements reveal interface in contact with WS2. In other heterostructure formed multilayer WS2, features observed, including absence charge transfer dominance intralayer excitons MoSe2. The coexistence interfaces single offers opportunities design sophisticated two-dimensional materials finely controlled photocarrier behaviors.

Language: Английский

Citations

0
Free Carrier Auger–Meitner Recombination in Monolayer Transition Metal Dichalcogenides DOI
J. Hader, Jerome V. Moloney

Nano Letters, Journal Year: 2024, Volume and Issue: 25(1), P. 284 - 290

Published: Dec. 27, 2024

Microscopic many-body models based on inputs from first-principles density functional theory are used to calculate the carrier losses due free Auger–Meitner recombination (AMR) processes in Mo- and W-based monolayer transition metal dichalcogenides as a function of density, temperature, dielectric environment. Despite exceptional strength Coulomb interaction two-dimensional materials, AMR found be similar magnitude those conventional III–V-based quantum wells for same wavelengths. Unlike case III–V show nontrivial dependencies fact that bandgap renormalizations order hundreds millielectronvolts can bring higher bands into or out resonance with optimal energy level transition, approximately one lowest band. Similar behaviors temperature screening.

Language: Английский

Citations

0