High-performance solar-blind imaging photodetectors based on micrometer-thick β-Ga2O3 films grown by thermal oxidation of gallium DOI
Haitao Zhou,

Hongbin Wang,

Jiangang Ma

et al.

Journal of Materials Chemistry C, Journal Year: 2024, Volume and Issue: unknown

Published: Jan. 1, 2024

A preparation method for micrometer-sized β-Ga 2 O 3 films was developed. The MSM device has a responsivity greater than 1.7 W −1 and good solar-blind ultraviolet imaging performance.

Language: Английский

Mg‐doped α‐Ga2O3 Nanorods for the Construction of Photoelectrochemical‐Type Self‐Powered Solar Blind UV Photodetectors and Underwater Imaging Application DOI Creative Commons
Xin Zhou, Lijuan Ye, Sin Yuan Lai

et al.

Advanced Science, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 26, 2025

Abstract Underwater imaging technologies are increasingly crucial for environmental monitoring and resource exploration. However, the development of advanced photodetectors such applications faces significant challenges, including interference from ambient visible infrared light, adaptation to underwater environments, cost‐effectiveness. Photoelectrochemical‐type solar‐blind (PEC‐SBPDs) based on wide bandgap semiconductors have shown great promise in overcoming these challenges. Here, a novel approach enhance performance α‐Ga 2 O 3 ‐based PEC‐SBPDs is presented through Mg‐doping. By employing low‐cost hydrothermal synthesis technique, Mg‐doped nanorod arrays fabricated, which induces formation V ‐Mg Ga complexes that enhances interfacial catalytic activity improves transport photogenerated carriers. The optimized exhibits remarkable 435% increase photocurrent response compared undoped , with peak responsivity 34.54 mA W −1 . A 5 × PEC‐SBPD array nanorods successfully demonstrated imaging, achieving clear efficient challenging conditions. This study not only highlights superior environments but also opens new avenues high‐performance self‐powered sensing, other related applications.

Language: Английский

Citations

0
Stable, high-performance vertical heterojunction ultraviolet photodetectors with Ga2O3-protected Ag nanowires window electrode DOI Creative Commons

Xingyuan Yu,

Yujie Peng, Di Zhang

et al.

ChemPhysMater, Journal Year: 2025, Volume and Issue: unknown

Published: March 1, 2025

Language: Английский

Citations

0
High-sensitive solar-blind β-Ga2O3 thin film photodetector deposited by PLD optimizing growth temperature DOI

Mingwei Jiang,

Sergii Golovynskyi, Jiefu Chen

et al.

Vacuum, Journal Year: 2025, Volume and Issue: unknown, P. 114282 - 114282

Published: March 1, 2025

Language: Английский

Citations

0
Boosting carrier separation through the synergistic action of Zr-O-P bonds and oxygen vacancies in the ZrO2/P heterojunction for sensitive detection of tetracycline DOI
R. L. C. Wang, Lei Sun, Jinxuan Han

et al.

Microchemical Journal, Journal Year: 2025, Volume and Issue: unknown, P. 112780 - 112780

Published: Jan. 1, 2025

Language: Английский

Citations

0
Enhanced performance of a-GaOx thin-film transistor photodetectors via in situ hydrogen incorporation using water vapor DOI

Minghang Lei,

Junyan Ren,

Jingting Sun

et al.

Journal of Materials Chemistry C, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

This study uses H 2 O vapor deposition to enhance a-GaO x photodetectors. In situ hydrogen incorporation and vacuum annealing boost responsivity speed, resolving the responsivity-response time trade-off.

Language: Английский

Citations

0
High Responsivity, Ultra-flexible, Self-driven Solar-blind Fibrous Photoelectrochemical Detector for Seawater Antibiotic Detection DOI
Gang Wu, Kai Chen, Yizhou Ni

et al.

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101702 - 101702

Published: March 1, 2025

Language: Английский

Citations

0
Preparation and Deep-ultraviolet Photoelectric Properties of Ga2O3 Nanorod Arrays/CuGaO2 Nanosheets Composite Films DOI

Chenyuan Chai,

Jingshan Hou,

Shuang He

et al.

Journal of Alloys and Compounds, Journal Year: 2025, Volume and Issue: unknown, P. 179857 - 179857

Published: March 1, 2025

Language: Английский

Citations

0
Collaborative control of charge transfer and ultrafast transient behavior through coupling and interfacial engineering in MXene/TMDs heterostructures realize effective photoelectrochemical DOI
Yuxin Liu,

S. C. Kan,

Mingkun Jiang

et al.

Journal of Power Sources, Journal Year: 2025, Volume and Issue: 641, P. 236826 - 236826

Published: March 26, 2025

Language: Английский

Citations

0
High‐Performance Broad‐Spectrum UV Photodetectors with Uniform Response: Engineering β‐Ga2O3:Si/GaN:Si Heterojunctions via Thermal Oxidation for Optoelectronic Logic Gate and Multispectral Imaging DOI

Jili Jiang,

Jiangshuai Luo,

Ke Ding

et al.

Small, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 1, 2024

Abstract Developing high‐performance, broad‐spectrum ultraviolet photodetectors (PDs) with uniform response is crucial for optoelectronic applications like spectral analysis, logic gates, and multispectral imaging. This study constructs n‐n type β‐Ga 2 O 3 :Si/GaN:Si heterojunction PDs using thermal oxidation, combining the advantages of :Si GaN:Si excellent (UV‐A to UV‐C). A proposed channel model oxidation includes hole formation, vortex structure development, grain growth, providing a basis understanding formation. Uniform Si doping in layer, achieved through reduces resistivity, enhances collection photogenerated carriers from underlying GaN hence performance. The devices exhibit outstanding uniformity sensitivity across UV‐A UV‐C range, peak responsivity 2.44 × 10 4 W −1 photocurrent‐to‐dark current ratio 1.3 5 . Applications include gates executing “OR gate” “AND operations 254 365 nm UV light, single‐pixel imaging system producing high‐contrast, clear “CNU” images 254, 295, light. research advances oxide formation offers method developing uniformly responsive applications.

Language: Английский

Citations

2
High-temperature ultraviolet photodetector and amplifying integrated circuits based on AlGaN/GaN heterostructure DOI
Xi Tang,

X. M. Liu,

Chunyu Zhao

et al.

Journal of Physics D Applied Physics, Journal Year: 2024, Volume and Issue: 58(8), P. 08LT01 - 08LT01

Published: Dec. 11, 2024

Abstract In this work, an ultraviolet (UV) photodetection and amplifying integrated circuit (IC) based on AlGaN/gallium nitride (GaN) heterostructure is demonstrated. The IC consists of a metal-heterostructure-metal photodetector (MHM-PD) high-electron-mobility transistor (HEMT)-based amplifier. photoresponse the MHM-PD increases at elevated temperatures due to spatial separation photocarriers under polarization electric field AlGaN/GaN heterointerface, as well photo-enhanced leakage current through metal-heterostructure junction. At 250 °C, achieves peak photoresponsivity 14.5 A W −1 UV-to-visible rejection ratio 10 4 . As thermal chuck temperature from 25 °C performance HEMT-based amplifier shows good stability. Finally, over 6 V switching frequency 50 kHz with rise decay time constants 3.95 μ s 2.8 s, respectively. These results show that has high-sensitivity high-speed UV detection capability.

Language: Английский

Citations

1