Efficient n- and p-Type Molecular Dopings in Large-Scale Monolayer Dichalcogenides for High-Performance Field-Effect Transistors DOI
Ye Seul Jung, Ji Yeon Kim,

Wenhu Shen

et al.

ACS Nano, Journal Year: 2025, Volume and Issue: unknown

Published: May 2, 2025

Doping engineering has been actively investigated for two-dimensional (2D) transition metal dichalcogenides (TMDs) to enhance their electrical behavior, particularly use in field-effect transistors (FETs). Here, we propose unprecedented redox-active n-type and p-type dopants, naphthalene WCl6, respectively, large-scale monolayer MoS2 films synthesized via low-pressure chemical vapor deposition using a Na2S promoter. These molecular dopants were selected based on high redox potentials versus the reference ferrocene, which facilitated ionization of charge transfer. Along with suppression effect sulfur vacancies monolayer, electronic transport behavior exhibits an ultrahigh electron mobility 331.7 cm2 V-1 s-1 n-doped FET excellent hole 31.8 on/off ratio ∼107 FET, all are record-setting values among those reported chemically doped TMD-based FETs. The modulation dopant concentration its correlation transistor performance mainly demonstrated, along adjusted band structures as potential origin exceptional outcomes. extended exploration multiple devices within single film demonstrated uniform characteristics.

Language: Английский

Efficient n- and p-Type Molecular Dopings in Large-Scale Monolayer Dichalcogenides for High-Performance Field-Effect Transistors DOI
Ye Seul Jung, Ji Yeon Kim,

Wenhu Shen

et al.

ACS Nano, Journal Year: 2025, Volume and Issue: unknown

Published: May 2, 2025

Doping engineering has been actively investigated for two-dimensional (2D) transition metal dichalcogenides (TMDs) to enhance their electrical behavior, particularly use in field-effect transistors (FETs). Here, we propose unprecedented redox-active n-type and p-type dopants, naphthalene WCl6, respectively, large-scale monolayer MoS2 films synthesized via low-pressure chemical vapor deposition using a Na2S promoter. These molecular dopants were selected based on high redox potentials versus the reference ferrocene, which facilitated ionization of charge transfer. Along with suppression effect sulfur vacancies monolayer, electronic transport behavior exhibits an ultrahigh electron mobility 331.7 cm2 V-1 s-1 n-doped FET excellent hole 31.8 on/off ratio ∼107 FET, all are record-setting values among those reported chemically doped TMD-based FETs. The modulation dopant concentration its correlation transistor performance mainly demonstrated, along adjusted band structures as potential origin exceptional outcomes. extended exploration multiple devices within single film demonstrated uniform characteristics.

Language: Английский

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