High Gain‐bandwidth Product MXene‐Si‐MXene vdW Photodetector for High Signal‐to‐Noise Ratio NIR Single‐Pixel Imaging DOI
Chen Wang,

Yunbo Lu,

Haolan Xu

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 5, 2025

Abstract Emerging near‐infrared (NIR) single‐pixel imaging (SPI) technology presents a promising alternative to conventional systems, offering cost efficiency and enhanced durability. The high gain bandwidth product (GBP) of the photodetector (PD) is primary requirement for resolution speed in SPI. Here, novel MXene‐Si‐MXene van der Waals (vdW) metal‐semiconductor‐metal (MSM) PD, demonstrated fabricated via facile solution process. By incorporating Ti 3 C 2 T x MXene film, device exhibits synergistic photogating effect, leading an exceptional photogain up 7.2 × 10 GBP 1.45 GHz under 850 nm illumination at bias voltage V, outperforming most currently reported silicon‐based detectors even many commercial avalanche photodiodes (APDs). Significantly, high‐quality 512 512‐pixel image successfully achieved 1% sampling rate without any additional filter circuitry by using PD. signal‐to‐noise ratio (SNR) 72.3 dB highest value date SPIs prior some NIR array detectors. Thereafter, reconstruction also obtained with SNR 32.1 visible opaque light. This work paves way easy fabrication PD

Language: Английский

High Gain‐bandwidth Product MXene‐Si‐MXene vdW Photodetector for High Signal‐to‐Noise Ratio NIR Single‐Pixel Imaging DOI
Chen Wang,

Yunbo Lu,

Haolan Xu

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 5, 2025

Abstract Emerging near‐infrared (NIR) single‐pixel imaging (SPI) technology presents a promising alternative to conventional systems, offering cost efficiency and enhanced durability. The high gain bandwidth product (GBP) of the photodetector (PD) is primary requirement for resolution speed in SPI. Here, novel MXene‐Si‐MXene van der Waals (vdW) metal‐semiconductor‐metal (MSM) PD, demonstrated fabricated via facile solution process. By incorporating Ti 3 C 2 T x MXene film, device exhibits synergistic photogating effect, leading an exceptional photogain up 7.2 × 10 GBP 1.45 GHz under 850 nm illumination at bias voltage V, outperforming most currently reported silicon‐based detectors even many commercial avalanche photodiodes (APDs). Significantly, high‐quality 512 512‐pixel image successfully achieved 1% sampling rate without any additional filter circuitry by using PD. signal‐to‐noise ratio (SNR) 72.3 dB highest value date SPIs prior some NIR array detectors. Thereafter, reconstruction also obtained with SNR 32.1 visible opaque light. This work paves way easy fabrication PD

Language: Английский

Citations

0