Advancing device-based computing by simplifying circuit complexity

Device, Journal Year: 2025, Volume and Issue: unknown, P. 100720 - 100720

Published: March 1, 2025

Language: Английский

Singlet Tetra‐Radical Nickel(II) Complex Based Versatile Molecular Memristor with Adaptive Learning Capability

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 24, 2025

Abstract Molecular memristors have emerged as pivotal components in next‐generation electronics, combining redox‐active functionality at the nanoscale with cognitive behaviors. Synthesis, characterization, and redox‐induced interconversion of a new binuclear open‐shell singlet (S = 0) tetra‐radical nickel(II)‐complex, [Ni II 2 (L •–•– ) ] ( 1 featuring two two‐electron reduced dianionic diradical scaffolds 2,9‐bis(phenyldiazenyl)‐1,10‐phenanthroline L robust resistive switching element is reported. The complex upon one‐electron ligand‐centered oxidation forms mono‐cationic tri‐radical species )(L •– )] + ([ ), which further transforms to di‐cationic monometallic 0 [ 2+ . Controlled reduction presence excess Ni(II)‐sources such NiCl or Ni(ClO 4 mono‐metallic Complex demonstrates exceptional performance molecular memristor, including high endurance over 750 cycles, 2‐h data retention, ultrafast speeds 55 ns. consistent On/Off conductivity difference under varying environmental conditions makes it promising for storage data‐processing applications. Moreover, supports advanced functionalities logic gate operations, 4‐bit edge computing, adaptive learning behavior, positioning versatile building block all‐in‐one electronic technologies.

Language: Английский

Rational design and DFT-based study of non-fullerene acceptors for high-performance organic solar cells: End-cap and Core modifications for enhanced charge transfer

Computational and Theoretical Chemistry, Journal Year: 2025, Volume and Issue: unknown, P. 115209 - 115209

Published: March 1, 2025

Language: Английский