eLight,
Journal Year:
2023,
Volume and Issue:
3(1)
Published: Jan. 4, 2023
Abstract
Metal
halide
perovskites
(MHPs),
emerging
as
innovative
and
promising
semiconductor
materials
with
prominent
optoelectronic
properties,
has
been
pioneering
a
new
era
of
light
management
(ranging
from
emission,
absorption,
modulation,
to
transmission)
for
next-generation
technology.
Notably,
the
exploration
fundamental
characteristics
MHPs
their
devices
is
main
research
theme
during
past
decade,
while
in
next
it
will
be
primarily
critical
promote
implantation
optoelectronics.
In
this
review,
we
first
retrospect
historical
milestones
devices.
Thereafter,
introduce
origin
unique
features
MHPs,
based
on
which
highlight
tunability
these
via
regulating
phase,
dimensionality,
composition,
geometry
MHPs.
Then,
show
that
owing
convenient
property
control
various
target
performance
can
designed.
At
last,
emphasize
revolutionary
applications
MHPs-based
existing
systems.
This
review
demonstrates
key
role
played
development
modern
optoelectronics,
expected
inspire
novel
directions
widespread
ACS Energy Letters,
Journal Year:
2022,
Volume and Issue:
7(6), P. 2079 - 2083
Published: May 24, 2022
Currently,
the
highest-performing
lead-free
perovskite
solar
cells
utilize
element
tin.
Tin
halide
perovskites,
typically
FASnI3,
resemble
their
lead-based
counterparts
in
optoelectronic
properties
but
possess
dissimilar
crystallization
kinetics.
To
tackle
usually
poor
film
quality,
we
introduced
trimethylthiourea
(3T)
to
spin
coating
of
FASnI3
films.
This
bifunctional
ligand
greatly
improved
morphology
and
texture
films
by
spreading
joining
individual
crystal
grains.
Accordingly,
charge-carrier
lifetime
3T-treated
reached
a
record
high
123
ns,
open-circuit
voltage
at
0.92
V
was
only
0.2
short
theoretical
limit,
both
approaching
those
lead
perovskites.
The
certified
power
conversion
efficiency
14.0%
stability
against
humid
air
are
also
among
best
for
cells.
Possible
reasons
efficacy
3T
through
H-bonding
discussed.
These
findings
emphasize
deposition
control
tin
perovskites
give
direction
future
developments.
Advanced Materials,
Journal Year:
2022,
Volume and Issue:
34(52)
Published: April 6, 2022
Abstract
Halide
perovskite
semiconductors
with
extraordinary
optoelectronic
properties
have
been
fascinatedly
studied.
nanocrystals,
single
crystals,
and
thin
films
prepared
for
various
fields,
such
as
light
emission,
detection,
harvesting.
High‐performance
devices
rely
on
high
crystal
quality
determined
by
the
nucleation
growth
process.
Here,
fundamental
understanding
of
crystallization
process
driven
supersaturation
solution
is
discussed
methods
halide
crystals
are
summarized.
Supersaturation
determines
proportion
average
Gibbs
free
energy
changes
surface
volume
molecular
units
involved
in
spontaneous
aggregation,
which
could
be
stable
induce
homogeneous
only
when
exceeds
a
required
minimum
critical
concentration
(
C
min
).
Crystal
heterogeneous
thermodynamically
easier
than
due
to
existent
surfaces.
Nanocrystals
mainly
via
nucleation‐dominated
rapidly
increasing
over
,
growth‐dominated
keeping
between
solubility
while
compromising
processes
ensure
compactness
grain
sizes.
Typical
strategies
preparing
these
three
forms
perovskites
also
reviewed.
Chemical Reviews,
Journal Year:
2024,
Volume and Issue:
124(7), P. 4079 - 4123
Published: March 25, 2024
All-perovskite
tandem
solar
cells
are
attracting
considerable
interest
in
photovoltaics
research,
owing
to
their
potential
surpass
the
theoretical
efficiency
limit
of
single-junction
cells,
a
cost-effective
sustainable
manner.
Thanks
bandgap-bowing
effect,
mixed
tin-lead
(Sn-Pb)
perovskites
possess
close
ideal
narrow
bandgap
for
constructing
matched
with
wide-bandgap
neat
lead-based
counterparts.
The
performance
all-perovskite
tandems,
however,
has
yet
reach
its
potential.
One
main
obstacles
that
need
be
overcome
is
the─oftentimes─low
quality
Sn-Pb
perovskite
films,
largely
caused
by
facile
oxidation
Sn(II)
Sn(IV),
as
well
difficult-to-control
film
crystallization
dynamics.
Additional
detrimental
imperfections
introduced
thin
film,
particularly
at
vulnerable
surfaces,
including
top
and
bottom
interfaces
grain
boundaries.
Due
these
issues,
resultant
device
distinctly
far
lower
than
theoretically
achievable
maximum
efficiency.
Robust
modifications
improvements
surfaces
films
therefore
critical
advancement
field.
This
Review
describes
origins
covers
efforts
made
so
toward
reaching
better
understanding
perovskites,
particular
respect
surface
improved
stability
cells.
In
addition,
we
also
outline
important
issues
integrating
subcells
achieving
reliable
efficient
double-
multi-junction
tandems.
Future
work
should
focus
on
characterization
visualization
specific
defects,
tracking
evolution
under
different
external
stimuli,
guiding
turn
processing
stable
cell
devices.
Advanced Materials,
Journal Year:
2023,
Volume and Issue:
35(26)
Published: March 30, 2023
Inorganic
CsSnI3
with
low
toxicity
and
a
narrow
bandgap
is
promising
photovoltaic
material.
However,
the
performance
of
perovskite
solar
cells
(PSCs)
much
lower
than
that
Pb-based
hybrid
Sn-based
(e.g.,
CsPbX3
CH(NH2
)2
SnX3
)
PSCs,
which
may
be
attributed
to
its
poor
film-forming
property
deep
traps
induced
by
Sn4+
.
Here,
bifunctional
additive
carbazide
(CBZ)
adapted
deposit
pinhole-free
film
remove
via
two-step
annealing.
The
lone
electrons
NH2
CO
units
in
CBZ
can
coordinate
Sn2+
form
dense
large
grains
during
phase
transition
at
80
°C.
decomposition
reduce
annealing
150
°C
traps.
Compared
control
device
(4.12%),
maximum
efficiency
:CBZ
PSC
reaches
11.21%,
highest
reported
date.
A
certified
10.90%
obtained
an
independent
testing
laboratory.
In
addition,
unsealed
devices
maintain
initial
efficiencies
≈100%,
90%,
80%
under
inert
atmosphere
(60
days),
standard
power
point
tracking
(650
h
65
°C),
ambient
air
(100
h),
respectively.
Nature Electronics,
Journal Year:
2023,
Volume and Issue:
6(9), P. 650 - 657
Published: Aug. 21, 2023
Abstract
Tin
halide
perovskites
have
the
general
chemical
formula
ASnX
3
,
where
A
is
a
monovalent
cation
and
X
anion.
These
semiconducting
materials
can
be
used
to
fabricate
p-type
transistors
at
low
cost
temperature
could
potentially
integrated
with
n-type
oxide-based
create
complementary
circuits.
However,
suffer
from
crystallization
controllability
high
film
defect
density,
resulting
in
uncompetitive
device
performance.
Here
we
show
that
pure-tin
perovskite
thin-film
created
using
triple
cations
of
caesium–formamidinium–phenethylammonium.
The
approach
leads
high-quality
cascaded
tin
channel
films
low-defect,
phase-pure
perovskite/dielectric
interfaces.
optimized
exhibit
hole
mobilities
over
70
cm
2
V
−1
s
on/off
current
ratios
10
8
which
are
comparable
commercial
low-temperature
polysilicon
transistors.
fabricated
solution-processing
methods
temperatures
no
higher
than
100
°C.
We
also
integrate
devices
metal
oxide
inverters
voltage
gains
370,
NOR
NAND
logic
gates
rail-to-rail
switching
Nature Communications,
Journal Year:
2024,
Volume and Issue:
15(1)
Published: Aug. 26, 2024
All-perovskite
tandem
solar
cells
have
shown
great
promise
in
breaking
the
Shockley–Queisser
limit
of
single-junction
cells.
However,
efficiency
improvement
all-perovskite
is
largely
hindered
by
surface
defects
induced
non-radiative
recombination
loss
Sn–Pb
mixed
narrow
bandgap
perovskite
films.
Here,
we
report
a
reconstruction
strategy
utilizing
polishing
agent,
1,4-butanediamine,
together
with
passivator,
ethylenediammonium
diiodide,
to
eliminate
Sn-related
and
passivate
organic
cation
halide
vacancy
on
Our
not
only
delivers
high-quality
films
close-to-ideal
stoichiometric
ratio
but
also
minimizes
energy
at
perovskite/electron
transport
layer
interface.
As
result,
our
bandgaps
1.32
1.25
eV
realize
power
conversion
efficiencies
22.65%
23.32%,
respectively.
Additionally,
further
obtain
certified
28.49%
two-junction
The
impacted
nonradiative
authors
utilize
agent
passivator
deliver
surface.