Advanced Energy Materials,
Journal Year:
2022,
Volume and Issue:
12(37)
Published: Aug. 16, 2022
Abstract
The
open‐circuit
voltage
(
V
OC
)
and
fill
factor
(FF)
of
perovskite
solar
cells
(PSCs)
are
detrimentally
weakened
by
carrier
loss
at
the
perovskite/charge
transport
layers
(CTLs)
interfaces.
Herein,
a
dual
interfacial
modification
strategy
via
placing
Nb
2
CT
x
nanosheets
with
tailored
optoelectrical
properties
induced
manipulating
surface
terminal
groups
both
perovskite/CTLs
interfaces
is
employed.
Such
tactics
not
only
concurrently
implement
mobility
enhancement
CTLs
interface
energy‐levels
offsets
reduction.
More
importantly,
electrical
simulation
indicates
that
O
located
grain
boundaries
layer,
can
more
efficiently
conduct
hole
current
to
therefore
achieving
charge‐carrier
balance
in
device.
As
result,
synergy
effect
effectively
elevates
FF
cells,
reaching
maximum
values
1.253
81.07%,
respectively,
finally
delivering
progressively
increased
device
power
conversion
efficiency
(PCE)
24.11%
negligible
hysteresis.
This
PCE
value
ranks
highest
date
for
PSCs
employing
MXenes
materials.
Moreover,
optimized
devices
show
better
thermal
light
stability
than
control
devices.
work
demonstrates
simple
effective
method
utilizing
photovoltaic
field,
involving
photodetectors,
light‐emitting
diodes,
sensors,
etc.
Advanced Functional Materials,
Journal Year:
2022,
Volume and Issue:
32(36)
Published: June 30, 2022
Abstract
Interface
engineering
is
one
feasible
and
effective
approach
to
minimize
the
interfacial
nonradiative
recombination
stemming
from
defects,
residual
stress,
energy
level
mismatch.
Herein,
a
novel
steric‐hindrance‐dependent
buried
interface
defect
passivation
stress
release
strategy
reported,
which
implemented
by
adopting
series
of
adamantane
derivative
molecules
functionalized
with
CO
(i.e.,
2‐adamantanone
(AD),
1‐adamantane
carboxylic
acid
(ADCA),
1‐adamantaneacetic
(ADAA))
modify
SnO
2
/perovskite
interface.
All
modifiers
play
role
in
passivating
mitigating
strain,
enhancing
device
performance.
The
steric
hindrance
chemical
interaction
between
these
perovskites
as
well
determined
distance
bulky
ring,
gradually
decreases
AD,
ADCA,
ADAA.
experimental
theoretical
evidences
together
confirmed
effect
strength.
strength,
effect,
thus
performance
are
negatively
correlated
hindrance.
Consequently,
ADAA‐modified
achieves
seductive
efficiency
up
23.18%.
unencapsulated
devices
ADAA
maintain
81%
its
initial
after
aging
at
60
°C
for
1000
h.
Nano-Micro Letters,
Journal Year:
2022,
Volume and Issue:
15(1)
Published: Dec. 29, 2022
The
interfacial
defects
and
energy
barrier
are
main
reasons
for
nonradiative
recombination.
In
addition,
poor
perovskite
crystallization
incomplete
conversion
of
PbI2
to
restrict
further
enhancement
the
photovoltaic
performance
devices
using
sequential
deposition.
Herein,
a
buried
interface
stabilization
strategy
that
relies
on
synergy
fluorine
(F)
sulfonyl
(S=O)
functional
groups
is
proposed.
A
series
potassium
salts
containing
halide
non-halogen
anions
employed
modify
SnO2/perovskite
interface.
Multiple
chemical
bonds
including
hydrogen
bond,
coordination
bond
ionic
realized,
which
strengthens
contact
defect
passivation
effect.
interaction
between
modification
molecules
along
with
SnO2
heightens
incessantly
as
number
S=O
F
augments.
strength
modifiers
well
gradually
increases
increase
in
F.
effect
positively
correlated
strength.
kinetics
regulated
through
compromise
wettability
substrates.
Compared
Cl-,
all
perform
better
optimization,
band
regulation
passivation.
device
bis
(fluorosulfonyl)
imide
achieves
tempting
efficiency
24.17%.
Advanced Functional Materials,
Journal Year:
2023,
Volume and Issue:
33(22)
Published: March 2, 2023
Abstract
The
improvement
of
power
conversion
efficiency
(PCE)
and
stability
the
perovskite
solar
cell
(PSC)
is
hindered
by
carrier
recombination
originating
from
defects
at
buried
interface
PSC.
It
crucial
to
suppress
nonradiative
facilitate
transfer
in
PSC
via
engineering.
Herein,
P‐biguanylbenzoic
acid
hydrochloride
(PBGH)
developed
modify
tin
oxide
(SnO
2
)/perovskite
interface.
effects
PBGH
on
transportation,
growth,
defect
passivation,
performance
are
systematically
investigated.
On
one
hand,
can
effectively
passivate
trap
states
Sn
dangling
bonds
O
vacancies
SnO
surface
Lewis
acid/base
coordination,
which
conducive
improving
conductivity
film
accelerating
electron
extraction.
other
modification
assists
formation
high‐quality
with
low
density
due
its
strong
interaction
PbI
.
Consequently,
PBGH‐modified
exhibits
a
champion
24.79%,
highest
PCEs
among
all
FACsPbI
3
‐based
PSCs
reported
date.
In
addition,
stabilities
films
devices
under
high
temperature/humidity
light
illumination
conditions
also
studied.
Advanced Materials,
Journal Year:
2023,
Volume and Issue:
36(7)
Published: Oct. 7, 2023
The
buried
interface
of
the
perovskite
layer
has
a
profound
influence
on
its
film
morphology,
defect
formation,
and
aging
resistance
from
outset,
therefore,
significantly
affects
quality
device
performance
derived
solar
cells.
Especially
for
FAPbI
Advanced Materials,
Journal Year:
2022,
Volume and Issue:
35(7)
Published: Nov. 19, 2022
Although
CsPbI3
perovskites
have
shown
tremendous
potential
in
the
photovoltaic
field
owing
to
their
excellent
thermal
stability,
device
performance
is
seriously
restricted
by
severe
photovoltage
loss.
The
buried
titanium
oxide/perovskite
interface
plays
a
critical
role
interfacial
charge
transport
and
perovskite
crystallization,
which
closely
related
open-circuit
voltage
deficit
stemming
from
nonradiative
recombination.
Herein,
target
molecules
named
3-sulphonatopropyl
acrylate
potassium
salts
are
deliberately
employed
with
special
functional
groups
for
modifying
interface,
giving
rise
favorable
functions
terms
of
passivating
defects,
optimizing
energetic
alignment,
facilitating
crystallization.
Experimental
characterizations
theoretical
calculations
reveal
that
modification
inhibits
electron
transfer
barrier
simultaneously
improves
crystal
quality,
thereby
reducing
trap-assisted
recombination
Consequently,
omnibearing
regarding
endows
devices
an
impressive
efficiency
20.98%,
achieving
record-low
VOC
0.451
V.
as-proposed
strategy
renders
universal
prescription
push
limit
deficit,
showing
promising
future
developing
high-performance
all-inorganic
photovoltaics.
Advanced Functional Materials,
Journal Year:
2022,
Volume and Issue:
33(6)
Published: Dec. 11, 2022
Abstract
Recently,
organic–inorganic
metal
halide
perovskite
solar
cells
(PSCs)
have
achieved
rapid
improvement,
however,
the
efficiencies
are
still
behind
Shockley–Queisser
theory
mainly
due
to
their
high
energy
loss
(
E
LOSS
)
in
open‐circuit
voltage
V
OC
).
Due
polycrystalline
nature
of
solution‐prepared
films,
defects
at
grain
boundaries
as
non‐radiative
recombination
centers
greatly
affect
and
limit
device
efficiency.
Herein,
poly(vinylidene
fluoride)
(PVDF)
is
introduced
polymer‐templates
film,
where
fluorine
atoms
PVDF
network
can
form
strong
hydrogen‐bonds
with
organic
cations
coordinate
bonds
Pb
2+
.
The
interaction
between
perovksite
enables
slow
crystal
growth
efficient
defect
passivation,
which
effectively
reduce
non‐radiation
minimize
PVDF‐based
PSCs
achieve
a
champion
efficiency
24.21%
excellent
1.22
V,
one
highest
values
reported
for
FAMAPb(I/Br)
3
‐based
PSCs.
Furthermore,
hydrophobic
endow
humidity
stability,
unencapsulated
cell
maintain
initial
>90%
2500
h
under
air
ambient
≈50%
humid
consistently
1.20
V.
Angewandte Chemie International Edition,
Journal Year:
2023,
Volume and Issue:
62(25)
Published: April 17, 2023
Perovskite
solar
cells
(PSCs)
based
on
SnO2
electron
transport
layers
have
attracted
extensive
research
due
to
their
compelling
photovoltaic
performance.
Herein,
we
presented
an
in
situ
passivation
of
with
low-cost
hydroxyacid
potassium
synergist
during
deposition
optimize
the
interface
carrier
extraction
and
for
high
power
conversion
efficiency
(PCE)
stabilities
PSCs.
The
orbital
overlap
carboxyl
oxygen
Sn
atom
alongwith
homogenous
nano-particle
effectively
suppresses
interfacial
defects
releases
internal
residual
strains
perovskite.
Accordingly,
a
PCE
24.91
%
fill
factor
(FF)
up
0.852
is
obtained
passivated
devices,
which
one
highest
values
-based
Moreover,
unencapsulated
device
maintained
80
its
initial
at
°C
over
600
h,
100
ambient
conditions
1300
98
after
week
maximum
point
tracking
(MPPT)
under
continuous
AM1.5G
illumination.