Lattice Plainification Leads to High Thermoelectric Cooling Performance in Physically Vapor‐Deposited N‐Type PbSe Crystal DOI
Zhiyao Zhang,

Zhan Si,

Yuxiang Wei

et al.

Advanced Energy Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 16, 2025

Abstract Thermoelectric materials enable solid‐state cooling, which has drawn significant attention in the electronics industry. Current thermoelectric cooling devices rely on advanced Bi 2 Te 3 alloys. However, scarcity of element raises price and limits their widespread use. Therefore, developing high‐performance, low‐cost is a key focus field. In this work, high‐performance n‐type PbSe crystal developed through lattice plainification physical vapor deposition. Adding trace amounts Sn found to compensate for intrinsic Pb vacancies, effectively improves quality significantly enhances electron mobility from 1125 1550 cm V −1 s . This results high power factor 37 µW K −2 at room temperature crystal, transforming traditional mid‐temperature generation material into refrigeration material. The 7‐pairs PbSe‐based module achieves difference 52 temperature, demonstrating competitive coefficient performance (COP) 3.5 under 5 conditions. Single‐leg efficiency tests also validate 4.5% conversion T h = 773 All these demonstrate practical application value physically vapor‐deposited crystal.

Language: Английский

Lattice Plainification Leads to High Thermoelectric Cooling Performance in Physically Vapor‐Deposited N‐Type PbSe Crystal DOI
Zhiyao Zhang,

Zhan Si,

Yuxiang Wei

et al.

Advanced Energy Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 16, 2025

Abstract Thermoelectric materials enable solid‐state cooling, which has drawn significant attention in the electronics industry. Current thermoelectric cooling devices rely on advanced Bi 2 Te 3 alloys. However, scarcity of element raises price and limits their widespread use. Therefore, developing high‐performance, low‐cost is a key focus field. In this work, high‐performance n‐type PbSe crystal developed through lattice plainification physical vapor deposition. Adding trace amounts Sn found to compensate for intrinsic Pb vacancies, effectively improves quality significantly enhances electron mobility from 1125 1550 cm V −1 s . This results high power factor 37 µW K −2 at room temperature crystal, transforming traditional mid‐temperature generation material into refrigeration material. The 7‐pairs PbSe‐based module achieves difference 52 temperature, demonstrating competitive coefficient performance (COP) 3.5 under 5 conditions. Single‐leg efficiency tests also validate 4.5% conversion T h = 773 All these demonstrate practical application value physically vapor‐deposited crystal.

Language: Английский

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