Sol‐Gel Processed Metal‐Organic Complex as Robust Hole‐Transporting Layer Enabling Efficient Organic Solar Cells DOI Open Access

Meng-Di Li,

Jie Fang, Cheng Yang

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 13, 2024

Abstract Inorganic metal oxides and salts are widely employed as hole‐transporting layers (HTLs) in organic solar cells (OSCs) due to their advantages of low cost facile preparation. However, issues such severe agglomeration can negatively impact film quality, leading reduced reproducibility device stability. To address these challenges, this work reports the synthesis a vanadium trichloride‐benzene tricarboxylic acid (BTC) complex (denoted VB) via sol‐gel process under mild conditions (60 °C annealing). The VB demonstrates well‐aligned energy levels enhanced conductivity when integrated with PM6:L8‐BO active layer. Consequently, binary OSCs incorporating HTL achieve high‐power conversion efficiency (PCE) up 19.60%. Notably, processing technique offers versatile approach for fabrication metal‐organic complex, resulting uniform dense film. robust coordination network structure endows VB‐based exceptional thermal stability, evidenced by T 80 (PCE retention 80% initial value) lifetime 5142 h, which is among best performances reported state‐of‐the‐art OSCs.

Language: Английский

Vanadyl Sulfate Based Hole‐Transporting Layer Enables Efficient Organic Solar Cells DOI
Mengdi Li, Yuqing Sun, Cheng Yang

et al.

Chinese Journal of Chemistry, Journal Year: 2024, Volume and Issue: 42(14), P. 1644 - 1650

Published: March 22, 2024

Comprehensive Summary It remains an urgent task to develop alternative hole‐transporting layer (HTL) materials beyond commonly used PEDOT:PSS increase the shelf‐life of organic solar cells (OSCs). Inorganic metal oxide type materials, such as NiO x , CoO and VO with suitable work functions have attracted numerous research attention recently. In this work, more abundant easily accessible oxygenated salt, vanadyl sulfate (VOSO 4 ) has been demonstrated be excellent choice HTL for OSCs. The VOSO ‐based can readily processed by spin‐coating from precursor solution subsequent thermal annealing UVO treatment. As a consequence, high power conversion efficiency (PCE) 18.72% achieved PM8:L8‐BO based OSCs HTL. High transmittance, smooth film surface, energy level conductivity were revealed contribute OSC performance. More importantly, compared device PEDOT:PSS, exhibit improved stability when stored in N 2 filled glove box. After being 600 h, retain 89% its initial efficiency. Notably, general PM6:BTP‐BO‐4Cl PM6:IT‐4F OSCs, yielding PCEs 17.87% 13.85%, respectively.

Language: Английский

Citations

0

Sol‐Gel Processed Metal‐Organic Complex as Robust Hole‐Transporting Layer Enabling Efficient Organic Solar Cells DOI Open Access

Meng-Di Li,

Jie Fang, Cheng Yang

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 13, 2024

Abstract Inorganic metal oxides and salts are widely employed as hole‐transporting layers (HTLs) in organic solar cells (OSCs) due to their advantages of low cost facile preparation. However, issues such severe agglomeration can negatively impact film quality, leading reduced reproducibility device stability. To address these challenges, this work reports the synthesis a vanadium trichloride‐benzene tricarboxylic acid (BTC) complex (denoted VB) via sol‐gel process under mild conditions (60 °C annealing). The VB demonstrates well‐aligned energy levels enhanced conductivity when integrated with PM6:L8‐BO active layer. Consequently, binary OSCs incorporating HTL achieve high‐power conversion efficiency (PCE) up 19.60%. Notably, processing technique offers versatile approach for fabrication metal‐organic complex, resulting uniform dense film. robust coordination network structure endows VB‐based exceptional thermal stability, evidenced by T 80 (PCE retention 80% initial value) lifetime 5142 h, which is among best performances reported state‐of‐the‐art OSCs.

Language: Английский

Citations

0