Heterogeneous Cu Doping Facilitates Excellent Thermoelectric and Mechanical Performance in n-Type SnSe Composites DOI
Ze Li, Wenjie Li,

Jun Guo

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(50), P. 69758 - 69768

Published: Dec. 10, 2024

SnSe materials have attracted extensive attention in thermoelectrics due to their low thermal conductivity. Nevertheless, the thermoelectric properties of n-type polycrystalline are still low, and metallic Sn distributed SnSe1–x would affect repeatability performance. Herein, SnSe0.95-based composites highly enhanced by heterogeneous Cu doping. The carrier concentration SnSe0.95 material was optimized SnCl2 strategy doping is employed further improving performance SnCl2-doped materials. In addition, partial Cu+ tunes electron enhance Seebeck coefficient. Moreover, along grain boundaries can be stabilized forming Cu6Sn5 alloys, which improve stability bulk composites. Excessive particles precipitates strengthen phonon scattering for lowering lattice Ultimately, a peak ZT 1.55 yielded at 773 K SnSe0.95–1 wt % SnCl2–1 composite, whose mechanical hardness also increased. Hence, these results promote feasible approach simultaneously SnSe-based composites, might worth exploring other

Language: Английский

Stepwise Vacancy Manipulation for Optimized Carrier Concentration and Blocked Phonon Transport Realizing Record High Figure of Merit zT in CuInTe2 DOI Open Access

Tingdong Zhang,

Suiting Ning,

Tingting Zhang

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 11, 2025

Abstract Great enhancement in the thermoelectric performance of CuInTe 2 is achieved through stepwise regulation Cu vacancies. Lowering content can effective introduce large number vacancies, which substantiated by positron annihilation measurements. The carrier concentration thereby successfully tuned from 5.5× 10 18 cm −3 to 3.2× 19 . vacancies strongly suppress lattice thermal conductivity due both enhanced phonon scattering and lowered velocity. As a consequence, high zT value exceeding 1.2 at 773 K 0.95 InTe with optimal 1.65× highly deficient 0.90 sample further doped Bi, fill excessive Bi dopants mass strain fluctuation, also cause modulation structure form ordered superstructures, all enhance scattering. In addition, doping results severe softening, significantly reduces result, an extremely low 1.19 W m −1 reached 300 K. Eventually, record 1.8 0.06 sample, almost three times that pristine , reaching leading level for ‐based materials.

Language: Английский

Citations

0
Modulated electrical transport properties and Enhanced Thermoelectric Performance in Tellurium by Compositing with Copper and Doping with Antimony DOI
Qiang Hu, Manman Yang,

Xubiao Zhou

et al.

Vacuum, Journal Year: 2025, Volume and Issue: 238, P. 114249 - 114249

Published: March 15, 2025

Language: Английский

Citations

0
The Optimal Grain Boundary Enhances the Thermoelectric Performance of SnSe by 40% to 50% DOI
Ting Guo, Donglin Guo

Journal of Alloys and Compounds, Journal Year: 2025, Volume and Issue: unknown, P. 180686 - 180686

Published: May 1, 2025

Language: Английский

Citations

0
Matrix Plainification Leads to High Thermoelectric Performance in Plastic Cu2Se/SnSe Composites DOI Creative Commons
Guodong Tang, Pan Ying,

Qingyang Jian

et al.

Research Square (Research Square), Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 7, 2025

Abstract Thermoelectric technology exhibits significant potential for applications in power generation and electronic cooling. In this study, we report the achievement of exceptional thermoelectric performance high plasticity stable Cu2Se/SnSe composites. A novel matrix plainification strategy was employed to eliminate lattice vacancies within Cu2Se composites, resulting a marked improvement carrier mobility. This increase mobility corresponds substantial enhancement factor. Furthermore, presence quasi-coherent interfaces induces strong phonon scattering, which effectively reduces thermal conductivity without compromising Consequently, an outstanding figure merit (ZT) 3.3 attained composite. Additionally, high-density nanotwins imparts remarkable composite, yielding compressive strain 12%. The secondary phase contributes stability composite by hindering extensive migration Cu ions through bonding interactions. Our findings present significantly enhancing semiconductors, with applicability other systems.

Language: Английский

Citations

0
Modulating Structures and Nanocomposites to Boost Thermoelectric Properties of Polycrystalline SnSe by Ag/In Co-doping DOI
Jize Yu, Fujin Li,

Junliang Zhu

et al.

Journal of Materials Engineering and Performance, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 4, 2025

Language: Английский

Citations

0
Matrix plainification leads to high thermoelectric performance in plastic Cu2Se/SnSe composites DOI Creative Commons
Pan Ying,

Qingyang Jian,

Yaru Gong

et al.

Nature Communications, Journal Year: 2025, Volume and Issue: 16(1)

Published: April 7, 2025

Language: Английский

Citations

0
Study of Electronic, Optical, Mechanical, and Thermoelectric Aspects of Double Perovskite Oxides Ba2CaMO6 (M = S/Se) for Solar Cells and Transport Applications DOI
Hind Albalawi

Journal of Inorganic and Organometallic Polymers and Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 6, 2025

Language: Английский

Citations

0
Role of Bi/Te co-dopants on the thermoelectric properties of SnSe polycrystals: an experimental and theoretical investigation DOI Creative Commons

Manasa R. Shankar,

A. N. Prabhu,

Anuradha M. Ashok

et al.

Journal of Materials Science, Journal Year: 2024, Volume and Issue: 59(28), P. 13055 - 13077

Published: July 1, 2024

Abstract A sustainable solution to the energy crisis may be found in thermoelectric materials and generators, capable of transforming thermal into electrical or vice versa. SnSe is one emerging with distinctive properties. The main advantages this compound are earth-abundant, inexpensive, non-toxic it also known for its high performance. Here we prepared Bi/Te co-doped polycrystals; whereas, Bi Te added different compositions such as ( x = 0.0,0.02,0.04,0.06 y 0.03) (Sn 1-x Se 1-Y Y ) matrix by using solid-state reaction method. XRD data confirms samples belong orthorhombic crystal system Pnma space group. DFT calculations were used see structural stability electronic properties pure doped samples. Temperature-dependent semiconducting behavior has been demonstrated resistivity. Seebeck coefficient, correlated carrier concentration mobility, validates p -type pristine n dominant phonon scattering conductivity analysis. After co-doping there decrement total was observed which 1.3 times lower than SnSe. theoretical calculation validate experimental results estimate properties, specific heat capacity, conductivity, power factor Quantum espresso code Boltzmann transport Equation. 4% Bi-doped sample displayed a significant increment an enhanced led enhancement approximately 2.0 contrast ZT about 0.055 3.43 higher Graphical abstract

Language: Английский

Citations

3
Mechanistic Insight into the Effect of Cu Doping on Thermoelectric Properties of Sintered Wet-Chemically Synthesized SnSe2 Nanosheets DOI

Simon Moore,

Mari Takahashi, Philipp Sauerschnig

et al.

ACS Applied Energy Materials, Journal Year: 2024, Volume and Issue: 7(17), P. 7467 - 7477

Published: Aug. 26, 2024

SnSe2─an uncommon, sustainable n-type thermoelectric material─has previously been doped with elements including Cu to improve its figure of merit, ZT value. However, the effects and mechanisms behind doping remain unclear. To provide important mechanistic insight, SnSe2:Cu nanosheets were synthesized, sintered, subjected multifaceted analysis using a variety analytical techniques. The results suggested that intercalated Cu+ ions contribute density states valence band, shifting Fermi energy toward conduction band. carrier concentration was raised, causing shift across two band minima. Additionally, change ionized impurity scattering dominated mobility meant high at temperatures, since electron–phonon interactions insignificant. result significantly increased electrical conductivity, while thermal conductivity decreased due nanosheet grain boundaries ions. High values 0.2 in in-plane, 0.6 out-of-plane directions achieved 667 K.

Language: Английский

Citations

3
Disordered Order Enables High Out‐of‐Plane ZT in PbSnS2 Crystals DOI Open Access
Shaoping Zhan, Yi Wen, Bingchao Qin

et al.

Advanced Energy Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 4, 2024

Abstract High‐performance thermoelectric materials enable waste heat recovery, providing an effective avenue for sustainable development. The concept of “phonon‐glass electron‐crystal” is considered as ideal approach to achieve high‐performance materials. However, achieving this perfect state remains a significant challenge due the coupled transport parameters. In work, long‐range order and short‐range disorder (disordered order) in n‐type PbSnS 2 crystals are successfully realized through alloying Se, which synergistic optimization electron phonon transport. improvement crystal symmetry weakens distortion average order, leading high carrier mobility promoted electrical performance. Meanwhile, local structure analyzed by X‐ray absorption fine spectra reveals strengthened disorder, resulting enhanced scattering thus ultralow lattice thermal conductivity. As result, disordered enables ZT ≈ 1.7 ‐Cl‐30%Se at 733 K along out‐of‐plane direction. Moreover, single‐leg device fabricated using produces power generation efficiency ≈7.2% temperature difference 378 K. This work demonstrates realistic feasibility fulfill material, opens up new avenues performance optimization.

Language: Английский

Citations

2