Abstract
Near‐infrared
phosphor‐converted
light‐emitting
diodes
(NIR
pc‐LEDs)
are
regarded
one
of
the
most
promising
light
sources
for
food
analysis,
plant
growth,
bioimaging,
night
vision,
and
so
on.
Cr
3+
‐activated
NIR
phosphors
have
garnered
increasing
attention
due
to
their
exceptional
photoluminescence
properties
pc‐LED.
However,
them
suffer
from
poor
thermal
stability
or
low
efficiency
which
limits
large‐scale
application.
Herein,
a
novel
Sr
3
MgGe
5
O
14
:
(SMGO:
)
phosphor
is
presented,
exhibits
broadband
emission
ranging
range
650–1000
nm
with
peak
at
735
nm.
SMGO:
0.005Cr
demonstrates
an
almost
near‐unity
internal
quantum
(99.4%)
excellent
quenching
performance
(
I
423
K
/I
298
=
86%).
First‐principles
theory
calculation
indicates
that
ions
preferentially
occupy
[Ge2/MgO
4
]
[Ge3O
sites
high
doping
concentration
within
SMGO
host,
illustrating
mechanism.
Furthermore,
pc‐LED
manufactured
by
utilizing
445
blue
LED
chip,
output
power
140.5
mW
photoelectric
conversion
15.5%
300
mA.
Potential
applications
growth
detection
several
mental
also
demonstrated,
demostrates
its
application
in
growth.
Advanced Optical Materials,
Journal Year:
2022,
Volume and Issue:
11(3)
Published: Dec. 5, 2022
Abstract
Development
of
chromium‐doped
luminescent
materials
is
pertinent
to
many
emerging
applications,
ranging
from
agriculture,
food
industry
noninvasive
health
monitoring.
The
fundamental
importance
chromium‐activated
in
the
field
optics
and
biomedicine
makes
rapid
development
novel
relevant
applications.
Herein,
recent
advances
on
luminescence
principle
photoluminescence
(PL)
optimization
for
Cr
3+
‐activated
together
with
their
potential
applications
are
reviewed.
different
types
most
recently
developed
‐doped
design
principles
systematically
summarized.
associations
between
crystal
structure
near‐infrared
(NIR)
PL
properties,
as
well
performance‐evaluating
parameters
introduced
examples
known
NIR
emitting
phosphors,
which
will
be
helpful
explore
future
materials.
Based
control,
site
engineering,
electron–phonon
coupling,
several
efficient
strategies
optimizing
performances
including
bandwidth,
thermal
stability,
quantum
efficiency
proposed.
Then,
fields
analysis,
night
vision,
information
encryption,
optical
sensors
surveyed.
Finally,
challenges
promising
Advanced Optical Materials,
Journal Year:
2022,
Volume and Issue:
10(24)
Published: Oct. 26, 2022
Abstract
Near‐infrared
phosphor‐converted
light‐emitting
diodes
(NIR
pc‐LEDs)
have
promising
applications
in
food
analysis,
night
vision
imaging,
and
biological
probes.
Developing
NIR
phosphors
with
broadband
emission
high
efficiency
has
attracted
immense
interest.
Herein,
a
novel
phosphor
Ca
2
LuScAl
Si
O
12
:Cr
3+
(CLSAS:Cr
)
is
reported
for
the
first
time.
Under
excitation
of
442
nm
light,
CLSAS:Cr
shows
from
600
to
900
full
width
at
half
maximum
(FWHM)
142
nm,
benefiting
emissions
two
Cr
centers
CLSAS,
which
proved
by
spectra
decay
curves.
The
internal
quantum
(IQE)
73.7%
achieved
and,
423
K,
intensity
maintains
76%
value
room
temperature.
Combining
450
blue
chip,
pc‐LED
fabricated
demonstrated
fast
imaging
veins
human
palm
fist,
as
well
objects.
Achievement
of
high
photoluminescence
quantum
efficiency
and
thermal
stability
is
challenging
for
near-infrared
(NIR)-emitting
phosphors.
Here,
we
designed
a
"kill
two
birds
with
one
stone"
strategy
to
simultaneously
improve
the
NIR-emitting
Ca3Y2-2x(ZnZr)xGe3O12:Cr
garnet
system
by
chemical
unit
cosubstitution,
revealed
universal
structure-property
relationship
luminescence
optimization
mechanism.
The
cosubstitution
[Zn2+-Zr4+]
[Y3+-Y3+]
played
critical
role
as
reductant
promote
valence
transformation
from
Cr4+
Cr3+,
resulting
reconstruction
octahedral
sites
Cr3+.
introduction
also
contributed
rigid
crystal
structure.
These
aspects
together
realized
internal
96%
excellent
89%@423
K.
Moreover,
information
encryption
"burning
after
reading"
was
achieved
based
on
different
resistance
phosphors
acid.
developed
phosphor-converted
light-emitting
diode
demonstrated
promising
applications
in
bio-tissue
imaging
night
vision.
This
work
provides
new
perspective
developing
high-performance
phosphor
materials.
ACS Applied Materials & Interfaces,
Journal Year:
2023,
Volume and Issue:
15(27), P. 32580 - 32588
Published: June 29, 2023
Blue
InGaN
chip-pumped
short-wave
infrared
(SWIR)
emitters
have
aroused
tremendous
attention
and
shown
emerging
applications
in
diverse
fields
such
as
healthcare,
retail,
agriculture.
However,
discovering
blue
light-emitting
diode
(LED)-pumped
SWIR
phosphors
with
a
central
emission
wavelength
over
1000
nm
remains
significant
challenge.
Herein,
we
demonstrate
the
efficient
broadband
luminescence
of
Ni2+
by
simultaneously
incorporating
Cr3+
ions
into
MgGa2O4
lattice,
sensitizer
emitter.
Because
strong
light
absorption
high
energy
transfer
efficiency
to
Ni2+,
obtained
MgGa2O4:Cr3+,
show
intense
peak
at
1260
full
width
half
maximum
(FWHM)
222
under
excitation
light.
The
optimized
phosphor
presents
an
ultra-high
photoluminescence
quantum
96.5%
outstanding
thermal
stability
(67.9%@150
°C).
A
source
has
been
fabricated
through
combination
prepared
commercial
450
LED
chip,
delivering
radiant
power
14.9
mW
150
mA
input
current.
This
work
not
only
demonstrates
feasibility
developing
high-power
using
converter
technology
but
also
new
insights
importance
technology.
Inorganic Chemistry,
Journal Year:
2023,
Volume and Issue:
62(10), P. 4220 - 4226
Published: March 1, 2023
Broadband
near-infrared
(NIR)
phosphors
are
the
critical
component
of
phosphor
converted
NIR
light-emitting
diode
(LED)
light
sources.
However,
there
still
a
lack
with
excellent
external
quantum
efficiency
(EQE)
and
thermal
stability.
Here,
we
report
highly
efficient
broadband
Y3Ga3MgSiO12:
Cr3+.
The
optimized
yields
an
internal
(IQE)
EQE
79.9
33.7%,
respectively.
integrated
emission
intensity
remains
at
84.4%
that
room
temperature
when
heated
to
423
K.
A
LED
lamp
was
made
by
combining
as-prepared
blue
InGaN
chip,
which
shows
output
power
89.8
mW
photoelectric
conversion
17.1%
driven
525
input
power.
Our
research
provides
promising
high
for
source.
Advanced Optical Materials,
Journal Year:
2023,
Volume and Issue:
11(21)
Published: June 7, 2023
Abstract
Cr
3+
‐activated
Gd
3
Ga
5
O
12
garnet
(GGG:Cr
)
near‐infrared
(NIR)
phosphors
have
shown
promising
applications
in
regulating
plant
growth.
However,
the
low
external
quantum
efficiency
(EQE)
results
a
wall‐plug
(WPE)
of
phosphor‐converted
light‐emitting
diodes
(pc)‐LEDs
only
≈15%.
Herein,
an
easy
strategy
to
improve
luminescent
properties
GGG:Cr
phosphor
is
reported.
Through
optimization
synthesized
technology,
EQE
enhanced
43.6%.
Remarkably,
fabricated
pc‐LEDs
achieve
WPE
as
high
34.3%.
These
demonstrate
significant
advancement
development
and
NIR
materials
pc‐LED
devices.
ACS Applied Materials & Interfaces,
Journal Year:
2023,
Volume and Issue:
15(33), P. 39550 - 39558
Published: Aug. 10, 2023
Near-infrared
phosphor-converted
light-emitting
diodes
(NIR
pc-LEDs)
offer
numerous
advantages,
including
compact
size,
tunable
emission
spectra,
energy
efficiency,
and
high
integration
potential.
These
features
make
them
highly
promising
for
various
applications,
such
as
night
vision
monitoring,
food
safety
inspection,
biomedical
imaging,
theragnostics.
All-inorganic
halide
double-perovskite
materials,
known
their
large
absorption
cross
section,
excellent
defect
tolerance,
long
carrier
diffusion
radius,
serve
unique
matrices
constructing
near-infrared
fluorescent
materials.
In
this
study,
we
successfully
prepared
the
all-inorganic
metal
Cs2NaYCl6:Cr3+
using
a
grinding-sintering
method.
A
small
fraction
of
[YCl6]
octahedra
within
host
material's
lattice
was
substituted
with
Cr3+
ions,
resulting
in
creation
phosphor.
When
excited
λ
=
310
nm
UV
light,
phosphor
exhibited
broad
range
spanning
from
800
to
1400
nm,
covering
NIR-I
NIR-II
regions.
It
had
bandwidth
185
achieved
fluorescence
quantum
yield
20.2%.
The
broadband
originates
weak
crystal
field
environment
provided
by
Cs2NaYCl6
matrix,
which
enhances
luminescence
properties
ions.
To
create
NIR
pc-LEDs,
encapsulated
onto
commercially
available
LED
chip
operating
at
nm.
potential
application
these
pc-LEDs
imaging
validated.
Advanced Materials,
Journal Year:
2023,
Volume and Issue:
36(9)
Published: Nov. 8, 2023
Abstract
There
is
strong
demand
for
ultraefficient
near‐infrared
(NIR)
phosphors
with
adjustable
emission
properties
next‐generation
intelligent
NIR
light
sources.
Designing
large
full‐width
at
half‐maximum
(FWHM)
variations
challenging.
In
this
study,
novel
near‐ultraviolet
light‐emitting
diode
(LED)‐excited
phosphors,
MgAlGa
0.7
B
0.3
O
4
:Cr
3+
(MAGBO:Cr
),
three
centers
achieve
ultra‐narrowband
(FWHM
=
29
nm)
to
ultra‐broadband
260
increasing
Cr
concentration.
Gaussian
fitting
and
decay
time
analysis
reveal
the
alteration
in
FWHM,
which
attributed
energy
transfer
occurring
between
centers.
The
distinct
thermal
quenching
behaviors
of
are
revealed
through
temperature‐dependent
times.
phosphor
MAGBO:0.05Cr
exhibits
high
stability
(85%,
425
K)
exceptional
external
quantum
efficiency
68.5%.
An
phosphor‐converted
LED
(pc‐LED)
fabricated
using
phosphor,
exhibiting
a
remarkable
output
power
136
mW
600
mA
pc‐LEDs.
This
study
describes
preparation
highly
efficient
provides
further
understanding
tunable
vital
high‐performance
versatile
applications.
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
36(21)
Published: Feb. 21, 2024
Near-Infrared
(NIR)
light
emitting
metal
halides
are
emerging
as
a
new
generation
of
optical
materials
owing
to
their
appealing
features,
which
include
low-cost
synthesis,
solution
processability,
and
adjustable
properties.
NIR-emitting
perovskite-based
light-emitting
diodes
(LEDs)
have
reached
an
external
quantum
efficiency
(EQE)
over
20%
device
stability
10,000
h.
Such
results
sparked
interest
in
exploring
NIR
halide
emitters.
In
this
review,
several
different
types
halides,
including
lead/tin
bromide/iodide
perovskites,
lanthanide
ions
doped/based
double
low
dimensional
hybrid
Bi