Engineering and polarization properties of erbium-implanted lithium niobate films for integrated quantum applications DOI Creative Commons
A. E. Kaloyeros,

S. Dutta,

Spyros Gallis

et al.

APL Materials, Journal Year: 2024, Volume and Issue: 12(11)

Published: Nov. 1, 2024

Rare-earth-doped materials have garnered significant attention as material platforms in emerging quantum information and integrated photonic technologies. Concurrently, advances its nanofabrication processes unleashed thin film lithium niobate (LN) a leading force of research these technologies, encompassing many outstanding properties single material. Leveraging the scalability ion implantation to integrate rare-earth erbium (Er3+), which emits at 1532 nm, into LN can enable plethora exciting technologies operating telecom C-band. Many rely on coupling via polarization-sensitive structures such waveguides optical nanocavities, necessitating fundamental studies. Toward this goal, we conducted an extensive study role post-implantation processing minimizing implantation-induced defectivity x-cut insulator. By leveraging this, demonstrated cutting-edge ensemble linewidth 140 GHz for Er emission thin-film 77 K. This finding highlights progress defects through careful engineering processing. To best our knowledge, measured higher temperature (77 K) is narrowest when compared values reported bulk-doped implanted crystals liquid helium temperatures (∼3 K), showcasing potential approach higher-temperature operation devices. Furthermore, show that photoluminescence (PL) highly polarized perpendicular c-axis systematic combinational PL high-resolution scanning transmission electron microscopy (HRSTEM) These results indicate using emitters LN, along with their polarization characteristics related engineering, presents opportunity produce luminescent Er-doped devices circuits nanophotonic applications wavelengths.

Language: Английский

Mid-Infrared Photonic Sensors: Exploring Fundamentals, Advanced Materials, and Cutting-Edge Applications DOI Creative Commons
Muhammad A. Butt, Marcin Juchniewicz, Mateusz Słowikowski

et al.

Sensors, Journal Year: 2025, Volume and Issue: 25(4), P. 1102 - 1102

Published: Feb. 12, 2025

Mid-infrared (MIR) photonic sensors are revolutionizing optical sensing by enabling precise chemical and biological detection through the interrogation of molecules' unique vibrational modes. This review explores core principles MIR photonics, emphasizing light-matter interactions within 2-20 µm wavelength range. Additionally, it examines innovative sensor architectures, such as integrated platforms fibers, that enhance sensitivity, specificity, device miniaturization. The discussion extends to groundbreaking applications in environmental monitoring, medical diagnostics, industrial processes, security, highlighting transformative impact these technologies. comprehensive overview aims illuminate current state-of-the-art while inspiring future developments sensing.

Language: Английский

Citations

1

Silicon-Based Gallium Oxide Optical Waveguide Fabricated by MOCVD DOI

Han Yu,

Wei Chen, Teng Jiao

et al.

Vacuum, Journal Year: 2025, Volume and Issue: unknown, P. 114221 - 114221

Published: March 1, 2025

Language: Английский

Citations

1

On-chip compact thermo-optic phase shifter based on reduced graphene oxide (rGO) film and Mach-Zehnder interferometer DOI
Pengfei Shen, Tian Lan, Feng Yang

et al.

Optical Materials, Journal Year: 2025, Volume and Issue: unknown, P. 116704 - 116704

Published: Jan. 1, 2025

Language: Английский

Citations

0

High-Efficiency Bident Edge Coupler based on Thin Film Lithium Niobate DOI Creative Commons
Min Liu, Tianheng Zhang,

Binhang Xu

et al.

Optics Express, Journal Year: 2025, Volume and Issue: 33(7), P. 16338 - 16338

Published: March 19, 2025

Thin-film lithium niobate (TFLN) has gained significant attention as a platform for photonic integrated circuits (PICs) due to its exceptional properties, including high nonlinear coefficients and strong electro-optic response. However, efficient coupling between TFLN chips optical fibers remains challenge, with current edge coupler designs often facing issues related fabrication complexity alignment precision. In this paper, we propose high-efficiency, fabrication-friendly, alignment-tolerant bident based on overcome these limitations. The design comprises three distinct regions: the facet region, beam combining adiabatic taper region. It achieves measured efficiency of better than -1.52 dB per at 1550 nm, an average ranging from -1.85 -1.6 across C-band, mode field diameter approximately 4 μm. Notably, offers large tolerance ±1 This simplifies process, requiring only single overlay step. proposed practical solution interface packaging in devices, enabling performance low process complexity.

Language: Английский

Citations

0

Hybrid Photonic Integrated Circuits for Wireless Transceivers DOI Creative Commons

Tianwen Qian,

Benjamin Schuler, Y Durvasa Gupta

et al.

Photonics, Journal Year: 2025, Volume and Issue: 12(4), P. 371 - 371

Published: April 12, 2025

Recent advancements in hybrid photonic integrated circuits (PICs) for wireless communications are reviewed, with a focus on innovations developed at Fraunhofer HHI. This work leverages integration technology, which combines indium phosphide (InP) active elements, silicon nitride (Si3N4) low-loss waveguides, and high-efficient thermal-optical tunable polymers micro-optical functions to achieve fully transceivers. Key contributions include (1) On-chip optical injection locking generating phase-locked beat notes 45 GHz, enabled by cascaded InP phase modulators InP/polymer lasers 3.8 GHz range. (2) Waveguide-integrated THz emitters receivers, featuring photoconductive antennas (PCAs) 22× improved photoresponse compared top-illuminated designs, alongside scalable 1 × 4 PIN-PD PCA arrays enhanced power directivity. (3) Beam steering 300 using polymer-based phased array (OPA) an antenna array, achieving continuous across 20° 10.6 dB increase output power. (4) Demonstration of transceiver PICs combining InP, Si3N4, polymer material platforms, validated through key component characterization, on-chip frequency comb generation, coherent note generation GHz. These result compact form factors, reduced consumption, scalability, positioning as enabling technology future high-speed networks.

Language: Английский

Citations

0

Polarization states preparation based on TFLN integrated chip and SOI 2D grating coupler DOI

Chunxue Zhang,

Hanming Yang, Pengwei Cui

et al.

Optics & Laser Technology, Journal Year: 2025, Volume and Issue: 188, P. 112935 - 112935

Published: April 19, 2025

Language: Английский

Citations

0

Focal Plane Array Based on Silicon Nitride for Optical Beam Steering at 2 Microns DOI Creative Commons

Qing Gao,

Jiaqi Li,

Jincheng Wei

et al.

Photonics, Journal Year: 2025, Volume and Issue: 12(5), P. 448 - 448

Published: May 5, 2025

The 2 μm wavelength is ideal for light detection and ranging gas sensing due to its eye-safe operation, strong molecular absorption targeting, low atmospheric scattering—critical environmental monitoring free-space communications. existing systems rely on mechanical beam steering, which limits speed reliability. Integrated photonic solutions have not yet been demonstrated in this wavelength. We propose a focal plane array design address these challenges. Compared optical phased arrays requiring complex phase control each antenna, FPAs simple switch-based high suppression of background noise. Although need an external lens collimation, they significantly reduce system complexity. This study introduces compact, low-loss 1 × 8 operating the range, employing cascaded Mach–Zehnder interferometer switch silicon nitride platform. device demonstrates field view 16.8°, better than 17 dB, excess loss −1.4 dB. integrated steering solution offers highly promising, cost-effective approach rapid switching.

Language: Английский

Citations

0

Integrated microwave photonics true-time delay signal processor DOI Creative Commons
Pablo Martínez-Carrasco Romero, Tan Huy Ho, J. Capmany

et al.

APL Photonics, Journal Year: 2025, Volume and Issue: 10(5)

Published: May 1, 2025

Silicon photonic integrated circuits offer significant improvements in processing bandwidth, power efficiency, and low latency, addressing the needs of future microwave communication systems. Several successful applications have been demonstrated this field; however, focus is now shifting toward integrating these into single programmable circuits. This approach not only reduces fabrication costs but also makes photonics more accessible for everyday use. paper presents a scalable silicon-based signal processor with advanced functionalities, including high-speed arbitrary waveform generation, tunable bandwidth filtering, ultra-broadband beamforming. These results highlight both scale performance, representing step forward large-scale, high-performance, multifunctional

Language: Английский

Citations

0

Unidirectional frequency doubling laser based on lithium niobate on insulator DOI

Ruyi Xia,

Ranran Xie,

Xueqing Cui

et al.

Optics Communications, Journal Year: 2025, Volume and Issue: unknown, P. 131984 - 131984

Published: May 1, 2025

Language: Английский

Citations

0

超低损耗氮化硅集成光学:非线性光学和应用(特邀) DOI

郑华敏 Zheng Huamin,

余鲲鹏 Yu Kunpeng,

李世昌 Li Shichang

et al.

Acta Optica Sinica, Journal Year: 2024, Volume and Issue: 44(15), P. 1513018 - 1513018

Published: Jan. 1, 2024

Citations

1