Engineering and polarization properties of erbium-implanted lithium niobate films for integrated quantum applications DOI Creative Commons
A. E. Kaloyeros,

S. Dutta,

Spyros Gallis

et al.

APL Materials, Journal Year: 2024, Volume and Issue: 12(11)

Published: Nov. 1, 2024

Rare-earth-doped materials have garnered significant attention as material platforms in emerging quantum information and integrated photonic technologies. Concurrently, advances its nanofabrication processes unleashed thin film lithium niobate (LN) a leading force of research these technologies, encompassing many outstanding properties single material. Leveraging the scalability ion implantation to integrate rare-earth erbium (Er3+), which emits at 1532 nm, into LN can enable plethora exciting technologies operating telecom C-band. Many rely on coupling via polarization-sensitive structures such waveguides optical nanocavities, necessitating fundamental studies. Toward this goal, we conducted an extensive study role post-implantation processing minimizing implantation-induced defectivity x-cut insulator. By leveraging this, demonstrated cutting-edge ensemble linewidth 140 GHz for Er emission thin-film 77 K. This finding highlights progress defects through careful engineering processing. To best our knowledge, measured higher temperature (77 K) is narrowest when compared values reported bulk-doped implanted crystals liquid helium temperatures (∼3 K), showcasing potential approach higher-temperature operation devices. Furthermore, show that photoluminescence (PL) highly polarized perpendicular c-axis systematic combinational PL high-resolution scanning transmission electron microscopy (HRSTEM) These results indicate using emitters LN, along with their polarization characteristics related engineering, presents opportunity produce luminescent Er-doped devices circuits nanophotonic applications wavelengths.

Language: Английский

Subwavelength grating coupler for mid-infrared light coupling to an ultra-thin silicon waveguide DOI

Changguang Zou,

Oiyue Lang,

Rongxiang Guo

et al.

Published: July 26, 2024

Language: Английский

Citations

0
Engineering and polarization properties of erbium-implanted lithium niobate films for integrated quantum applications DOI Creative Commons
A. E. Kaloyeros,

S. Dutta,

Spyros Gallis

et al.

APL Materials, Journal Year: 2024, Volume and Issue: 12(11)

Published: Nov. 1, 2024

Rare-earth-doped materials have garnered significant attention as material platforms in emerging quantum information and integrated photonic technologies. Concurrently, advances its nanofabrication processes unleashed thin film lithium niobate (LN) a leading force of research these technologies, encompassing many outstanding properties single material. Leveraging the scalability ion implantation to integrate rare-earth erbium (Er3+), which emits at 1532 nm, into LN can enable plethora exciting technologies operating telecom C-band. Many rely on coupling via polarization-sensitive structures such waveguides optical nanocavities, necessitating fundamental studies. Toward this goal, we conducted an extensive study role post-implantation processing minimizing implantation-induced defectivity x-cut insulator. By leveraging this, demonstrated cutting-edge ensemble linewidth 140 GHz for Er emission thin-film 77 K. This finding highlights progress defects through careful engineering processing. To best our knowledge, measured higher temperature (77 K) is narrowest when compared values reported bulk-doped implanted crystals liquid helium temperatures (∼3 K), showcasing potential approach higher-temperature operation devices. Furthermore, show that photoluminescence (PL) highly polarized perpendicular c-axis systematic combinational PL high-resolution scanning transmission electron microscopy (HRSTEM) These results indicate using emitters LN, along with their polarization characteristics related engineering, presents opportunity produce luminescent Er-doped devices circuits nanophotonic applications wavelengths.

Language: Английский

Citations

0