Design and Analysis of K-Band Single-Pole Double-Throw Switches Based on GaAs Technology DOI Creative Commons
Sida Tang, Xiaoqing Liu,

Mengye Cai

et al.

Crystals, Journal Year: 2024, Volume and Issue: 14(7), P. 657 - 657

Published: July 17, 2024

Two K-band switch circuits, each consisting of a single-pole double-throw (SPDT) switch, have been built using 0.15 μm GaAs process. One circuit utilizes diode techniques while the other field effect transistor (FET) techniques. The switches that devised exhibit exceptional linearity and are capable withstanding high power levels. return loss 10 dB or higher, an insertion 3 lower, operate within frequency range 19 GHz to 25 GHz. They compact design with core size only 1.05 mm2 consume total 136.8 mW. FET SPDT circuits created utilizing parallel–parallel quarter-wavelength transmission line architecture. This allows for higher output compared diode. transistorized is designed ensures low loss. By adjusting length line, can in both bands; Ka-band.

Language: Английский

Insights of quad port MIMO antenna for 5G NR n77/n79 to X-bands with reconfigurable grounds using PIN diodes DOI

Gayatri Tangirala,

Srinivasu Garikipati, Manikya Krishna Chaitanya Durbhakula

et al.

Analog Integrated Circuits and Signal Processing, Journal Year: 2025, Volume and Issue: 123(2)

Published: March 18, 2025

Language: Английский

Citations

0
Enhanced 2-port MIMO antenna with composite two-step metasurface for 77 GHz Vehicle-to-Everything applications DOI
Mehran Bakhshi, Vahid Faramarzi, Seyyed Hamed Ayatollahi

et al.

AEU - International Journal of Electronics and Communications, Journal Year: 2024, Volume and Issue: 184, P. 155404 - 155404

Published: June 19, 2024

Language: Английский

Citations

2
Design and Analysis of K-Band Single-Pole Double-Throw Switches Based on GaAs Technology DOI Creative Commons
Sida Tang, Xiaoqing Liu,

Mengye Cai

et al.

Crystals, Journal Year: 2024, Volume and Issue: 14(7), P. 657 - 657

Published: July 17, 2024

Two K-band switch circuits, each consisting of a single-pole double-throw (SPDT) switch, have been built using 0.15 μm GaAs process. One circuit utilizes diode techniques while the other field effect transistor (FET) techniques. The switches that devised exhibit exceptional linearity and are capable withstanding high power levels. return loss 10 dB or higher, an insertion 3 lower, operate within frequency range 19 GHz to 25 GHz. They compact design with core size only 1.05 mm2 consume total 136.8 mW. FET SPDT circuits created utilizing parallel–parallel quarter-wavelength transmission line architecture. This allows for higher output compared diode. transistorized is designed ensures low loss. By adjusting length line, can in both bands; Ka-band.

Language: Английский

Citations

0