Room-Temperature Silicon Nitride Quantum Emitters for Advancing Quantum Key Distribution DOI
Alexander Senichev, Zachariah O. Martin, Samuel Peana

et al.

Published: Jan. 1, 2024

Newly discovered silicon nitride quantum emitters hold great promise for industrial-scale photonic applications. We assess the performance of intrinsic room-temperature SiN single-photon key distribution, showcasing their exceptional brightness and purity.

Language: Английский

The ideal wavelength for daylight free-space quantum key distribution DOI Creative Commons
Mostafa Abasifard, Chanaprom Cholsuk, Roberto G. Pousa

et al.

Deleted Journal, Journal Year: 2024, Volume and Issue: 1(1)

Published: March 1, 2024

Quantum key distribution (QKD) has matured in recent years from laboratory proof-of-principle demonstrations to commercially available systems. One of the major bottlenecks is limited communication distance fiber networks due exponential signal damping. To bridge intercontinental distances, low Earth orbit satellites transmitting quantum signals over atmosphere can be used. These free-space links, however, only operate during night, as sunlight otherwise saturates detectors used measure states. For applying QKD a global internet with continuous availability and high data rates, operation daylight required. In this work, we model satellite-to-ground channel for different light sources identify optimal wavelength under ambient conditions. Daylight possible within Fraunhofer lines or near-infrared spectrum, where intrinsic background sun comparably low. The highest annual secret length considering finite effect achievable at Hα line. More importantly, provide fundamental that adapted, general, any other specific link scenario taking into account required modifications. We also propose true single-photon source based on color center hexagonal boron nitride coupled microresonator implement such scheme. Our results applied roof-to-roof scenarios are, therefore, relevant near-future networks.

Language: Английский

Citations

15

Selective Generation of Luminescent Defects in Hexagonal Boron Nitride DOI Creative Commons
Giacomo Venturi, Stefano Chiodini, Nicola Melchioni

et al.

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: 18(6)

Published: Feb. 11, 2024

Abstract Single photon emitters from atomic defects in crystals like hexagonal boron nitride (hBN) are vital for quantum technologies. Although various techniques devised to obtain emission hBN, simultaneous control over position, type, and spectrum has not been achieved yet. Here, ion implantation with 12 C, 20 Ne, 69 Ga used create a composite population ≈820 nm. The correlation of Raman photoluminescence (PL) spectroscopy helps identify the defects’ type. After selecting as species yielding maximum emitter brightness, strategy based on thermal annealing is developed modify composition induced defects. This results an ensemble selected spectral properties, even when starting different conditions. Specifically, induces defect transmutation one type another, shifting wavelength 820 625 Moreover, sample patterning combined focused beam subsequent efficient method deterministically set position well PL composition. These offer practical avenue achieve situ positioning tuning ensembles promising information sensing applications.

Language: Английский

Citations

11

First-principles theory of the nitrogen interstitial in hBN: a plausible model for the blue emitter DOI Creative Commons
Ádám Ganyecz, Rohit Babar, Zsolt Benedek

et al.

Nanoscale, Journal Year: 2024, Volume and Issue: 16(8), P. 4125 - 4139

Published: Jan. 1, 2024

We elaborate on the methodology of computing color centers in periodic and cluster models hBN. Using first-principles methods, we determined various optical properties nitrogen interstitial defect compared them to experimental results.

Language: Английский

Citations

10

Narrowband Quantum Light Emission from Oxygen-Related Color Centers in Hexagonal Boron Nitride DOI

Seyed Sepehr Mohajerani,

Siwei Chen, Aida Alaei

et al.

ACS Photonics, Journal Year: 2024, Volume and Issue: 11(6), P. 2359 - 2367

Published: May 8, 2024

Hexagonal boron nitride (hBN) is attracting increasing attention for quantum information science due to its ability host carbon-related color centers that perform as robust, high-temperature light sources, well native defects such charged VB– with optically addressable spin states toward spin-based applications. So far, achieving isolation of individual out ensemble emission remains difficult their low yield, warranting the search other candidates. Here, we show oxygen annealing creates emitters characterized by a phonon-sideband-free in 800 nm band. The strongly linearly polarized (79%), characteristic dipole rotation 20° and saturation intensity around 1 MHz, comparable brightest hBN reported previously. Their time dynamics appear free spectral diffusion or blinking, implying excellent room-temperature photostability without additional passivation techniques. Detailed cryogenic studies estimate zero pump power line width down 87.5 μeV, which several orders magnitude narrower compared defect center under nonresonant excitation. demonstrated photophysical properties oxygen-related are promising advance free-space communication might enable indistinguishable single photons interfacing 87Rb vapor-based memory technologies future work.

Language: Английский

Citations

8

Finite key performance of satellite quantum key distribution under practical constraints DOI Creative Commons
Jasminder S. Sidhu, Thomas Brougham,

Duncan McArthur

et al.

Communications Physics, Journal Year: 2023, Volume and Issue: 6(1)

Published: Aug. 10, 2023

Abstract Global-scale quantum communication networks will require efficient long-distance distribution of signals. While optical fibre communications are range-limited due to exponential losses in the absence memories and repeaters, satellites enable intercontinental communications. However, design satellite key (SatQKD) systems has unique challenges over terrestrial networks. The typical approach modelling SatQKD been estimate performances with a fully optimised protocol parameter space few payload platform resource limitations. Here, we analyse how practical constraints affect performance for Bennett-Brassard 1984 (BB84) weak coherent pulse decoy state finite size effects. We consider engineering limitations trade-offs mission including limited in-orbit tunability, random number generation rates storage, source intensity uncertainty. quantify limits determine long-term capacity provide benchmarks support upcoming missions.

Language: Английский

Citations

14

Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin DOI Creative Commons
Moritz Fischer, Sajid Ali, Jake Iles-Smith

et al.

Nanoscale, Journal Year: 2023, Volume and Issue: 15(34), P. 14215 - 14226

Published: Jan. 1, 2023

We narrow down the microscopic origin to 3 out of 26 defect transitions by comparing experiments with ab initio methods and polaron model. show excellent agreement between theory experimental photoluminescence excitation spectroscopy.

Language: Английский

Citations

14

Fundamentals and emerging optical applications of hexagonal boron nitride: a tutorial DOI
Cong Su,

Eli Janzen,

Mingze He

et al.

Advances in Optics and Photonics, Journal Year: 2024, Volume and Issue: 16(2), P. 229 - 229

Published: March 19, 2024

Hexagonal boron nitride (hBN), also known as white graphite, is a transparent layered crystal with wide bandgap. Its structure resembles featuring layers composed of honeycomb lattices held together through van der Waals forces. The hBN facilitates exfoliation into thinner flakes and makes it highly anisotropic in in-plane out-of-plane directions. Unlike both insulating transparent, making an ideal material for isolating devices from the environment acting waveguide. As result, has found extensive applications optical devices, electronic quantum photonic devices. This comprehensive tutorial aims to provide readers thorough understanding hBN, covering its synthesis, lattice spectroscopic characterization, various optoelectronic designed without prior experience those expertise specific fields seeking understand relevance connections others.

Language: Английский

Citations

6

Electrically Pumped h-BN Single-Photon Emission in van der Waals Heterostructure DOI

Mihyang Yu,

Jeonghan Lee,

Kenji Watanabe

et al.

ACS Nano, Journal Year: 2024, Volume and Issue: 19(1), P. 504 - 511

Published: Dec. 30, 2024

Atomic defects in solids offer a versatile basis to study and realize quantum phenomena information science various integrated systems. All-electrical pumping of single create light emission has been realized several platforms including color centers diamond silicon carbide, which could lead the circuit network electrically triggered single-photon sources. However, wide conduction channel reduces carrier injection per defect site major obstacle. Here, we device concept construct pumped using van der Waals stacked structure with atomic plane precision. Defect-induced tunneling currents across graphene NbSe2 electrodes sandwiching an atomically thin h-BN layer allow robust persistent generation nonclassical from h-BN. The collected photon energies range between 1.4 2.9 eV, revealing electrical excitation variety defects. By analyzing dipole axis observed emitters, further confirm that emitters are crystallographic structures crystal. Our work facilitates implementing efficient miniaturized devices toward applications optoelectronics.

Language: Английский

Citations

4

Atomic Defect Quantification by Lateral Force Microscopy DOI

Yucheng Yang,

Kaikui Xu,

Luke N. Holtzman

et al.

ACS Nano, Journal Year: 2024, Volume and Issue: 18(9), P. 6887 - 6895

Published: Feb. 22, 2024

Atomic defects in two-dimensional (2D) materials impact electronic and optoelectronic properties, such as doping single photon emission. An understanding of defect–property relationships is essential for optimizing material performance. However, progress these critical hindered by a lack straightforward approaches accurate, precise, reliable defect quantification on the nanoscale, especially insulating materials. Here, we demonstrate that lateral force microscopy (LFM), mechanical technique, can observe atomic semiconducting 2D under ambient conditions. We first improve sensitivity LFM through consideration cantilever mechanics. With improved sensitivity, use to locate atomic-scale point surface bulk MoSe2. By directly comparing conductive (CAFM) measurements MoSe2, observed with are crystal. As does not require pathway, which allows characterization materials, hexagonal boron nitride (hBN). ability intrinsic hBN introduced annealing. Our demonstration technique applicable both will enable routine determination accelerate research.

Language: Английский

Citations

4

Engineering Quantum Light Sources with Flat Optics DOI Creative Commons
Jinyong Ma, Jihua Zhang, Jake Horder

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: 36(23)

Published: March 13, 2024

Abstract Quantum light sources are essential building blocks for many quantum technologies, enabling secure communication, powerful computing, and precise sensing imaging. Recent advancements have witnessed a significant shift toward the utilization of “flat” optics with thickness at subwavelength scales development sources. This approach offers notable advantages over conventional bulky counterparts, including compactness, scalability, improved efficiency, along added functionalities. review focuses on recent advances in leveraging flat to generate Specifically, generation entangled photon pairs through spontaneous parametric down‐conversion nonlinear metasurfaces, single emission from emitters dots color centers 3D 2D materials explored. The covers theoretical principles, fabrication techniques, properties these sources, particular emphasis enhanced engineering using optical resonances supported by nanostructures. diverse application range is discussed current challenges perspectives field highlighted.

Language: Английский

Citations

4