Newly
discovered
silicon
nitride
quantum
emitters
hold
great
promise
for
industrial-scale
photonic
applications.
We
assess
the
performance
of
intrinsic
room-temperature
SiN
single-photon
key
distribution,
showcasing
their
exceptional
brightness
and
purity.
Deleted Journal,
Journal Year:
2024,
Volume and Issue:
1(1)
Published: March 1, 2024
Quantum
key
distribution
(QKD)
has
matured
in
recent
years
from
laboratory
proof-of-principle
demonstrations
to
commercially
available
systems.
One
of
the
major
bottlenecks
is
limited
communication
distance
fiber
networks
due
exponential
signal
damping.
To
bridge
intercontinental
distances,
low
Earth
orbit
satellites
transmitting
quantum
signals
over
atmosphere
can
be
used.
These
free-space
links,
however,
only
operate
during
night,
as
sunlight
otherwise
saturates
detectors
used
measure
states.
For
applying
QKD
a
global
internet
with
continuous
availability
and
high
data
rates,
operation
daylight
required.
In
this
work,
we
model
satellite-to-ground
channel
for
different
light
sources
identify
optimal
wavelength
under
ambient
conditions.
Daylight
possible
within
Fraunhofer
lines
or
near-infrared
spectrum,
where
intrinsic
background
sun
comparably
low.
The
highest
annual
secret
length
considering
finite
effect
achievable
at
Hα
line.
More
importantly,
provide
fundamental
that
adapted,
general,
any
other
specific
link
scenario
taking
into
account
required
modifications.
We
also
propose
true
single-photon
source
based
on
color
center
hexagonal
boron
nitride
coupled
microresonator
implement
such
scheme.
Our
results
applied
roof-to-roof
scenarios
are,
therefore,
relevant
near-future
networks.
Abstract
Single
photon
emitters
from
atomic
defects
in
crystals
like
hexagonal
boron
nitride
(hBN)
are
vital
for
quantum
technologies.
Although
various
techniques
devised
to
obtain
emission
hBN,
simultaneous
control
over
position,
type,
and
spectrum
has
not
been
achieved
yet.
Here,
ion
implantation
with
12
C,
20
Ne,
69
Ga
used
create
a
composite
population
≈820
nm.
The
correlation
of
Raman
photoluminescence
(PL)
spectroscopy
helps
identify
the
defects’
type.
After
selecting
as
species
yielding
maximum
emitter
brightness,
strategy
based
on
thermal
annealing
is
developed
modify
composition
induced
defects.
This
results
an
ensemble
selected
spectral
properties,
even
when
starting
different
conditions.
Specifically,
induces
defect
transmutation
one
type
another,
shifting
wavelength
820
625
Moreover,
sample
patterning
combined
focused
beam
subsequent
efficient
method
deterministically
set
position
well
PL
composition.
These
offer
practical
avenue
achieve
situ
positioning
tuning
ensembles
promising
information
sensing
applications.
Nanoscale,
Journal Year:
2024,
Volume and Issue:
16(8), P. 4125 - 4139
Published: Jan. 1, 2024
We
elaborate
on
the
methodology
of
computing
color
centers
in
periodic
and
cluster
models
hBN.
Using
first-principles
methods,
we
determined
various
optical
properties
nitrogen
interstitial
defect
compared
them
to
experimental
results.
ACS Photonics,
Journal Year:
2024,
Volume and Issue:
11(6), P. 2359 - 2367
Published: May 8, 2024
Hexagonal
boron
nitride
(hBN)
is
attracting
increasing
attention
for
quantum
information
science
due
to
its
ability
host
carbon-related
color
centers
that
perform
as
robust,
high-temperature
light
sources,
well
native
defects
such
charged
VB–
with
optically
addressable
spin
states
toward
spin-based
applications.
So
far,
achieving
isolation
of
individual
out
ensemble
emission
remains
difficult
their
low
yield,
warranting
the
search
other
candidates.
Here,
we
show
oxygen
annealing
creates
emitters
characterized
by
a
phonon-sideband-free
in
800
nm
band.
The
strongly
linearly
polarized
(79%),
characteristic
dipole
rotation
20°
and
saturation
intensity
around
1
MHz,
comparable
brightest
hBN
reported
previously.
Their
time
dynamics
appear
free
spectral
diffusion
or
blinking,
implying
excellent
room-temperature
photostability
without
additional
passivation
techniques.
Detailed
cryogenic
studies
estimate
zero
pump
power
line
width
down
87.5
μeV,
which
several
orders
magnitude
narrower
compared
defect
center
under
nonresonant
excitation.
demonstrated
photophysical
properties
oxygen-related
are
promising
advance
free-space
communication
might
enable
indistinguishable
single
photons
interfacing
87Rb
vapor-based
memory
technologies
future
work.
Communications Physics,
Journal Year:
2023,
Volume and Issue:
6(1)
Published: Aug. 10, 2023
Abstract
Global-scale
quantum
communication
networks
will
require
efficient
long-distance
distribution
of
signals.
While
optical
fibre
communications
are
range-limited
due
to
exponential
losses
in
the
absence
memories
and
repeaters,
satellites
enable
intercontinental
communications.
However,
design
satellite
key
(SatQKD)
systems
has
unique
challenges
over
terrestrial
networks.
The
typical
approach
modelling
SatQKD
been
estimate
performances
with
a
fully
optimised
protocol
parameter
space
few
payload
platform
resource
limitations.
Here,
we
analyse
how
practical
constraints
affect
performance
for
Bennett-Brassard
1984
(BB84)
weak
coherent
pulse
decoy
state
finite
size
effects.
We
consider
engineering
limitations
trade-offs
mission
including
limited
in-orbit
tunability,
random
number
generation
rates
storage,
source
intensity
uncertainty.
quantify
limits
determine
long-term
capacity
provide
benchmarks
support
upcoming
missions.
Nanoscale,
Journal Year:
2023,
Volume and Issue:
15(34), P. 14215 - 14226
Published: Jan. 1, 2023
We
narrow
down
the
microscopic
origin
to
3
out
of
26
defect
transitions
by
comparing
experiments
with
ab
initio
methods
and
polaron
model.
show
excellent
agreement
between
theory
experimental
photoluminescence
excitation
spectroscopy.
Advances in Optics and Photonics,
Journal Year:
2024,
Volume and Issue:
16(2), P. 229 - 229
Published: March 19, 2024
Hexagonal
boron
nitride
(hBN),
also
known
as
white
graphite,
is
a
transparent
layered
crystal
with
wide
bandgap.
Its
structure
resembles
featuring
layers
composed
of
honeycomb
lattices
held
together
through
van
der
Waals
forces.
The
hBN
facilitates
exfoliation
into
thinner
flakes
and
makes
it
highly
anisotropic
in
in-plane
out-of-plane
directions.
Unlike
both
insulating
transparent,
making
an
ideal
material
for
isolating
devices
from
the
environment
acting
waveguide.
As
result,
has
found
extensive
applications
optical
devices,
electronic
quantum
photonic
devices.
This
comprehensive
tutorial
aims
to
provide
readers
thorough
understanding
hBN,
covering
its
synthesis,
lattice
spectroscopic
characterization,
various
optoelectronic
designed
without
prior
experience
those
expertise
specific
fields
seeking
understand
relevance
connections
others.
ACS Nano,
Journal Year:
2024,
Volume and Issue:
19(1), P. 504 - 511
Published: Dec. 30, 2024
Atomic
defects
in
solids
offer
a
versatile
basis
to
study
and
realize
quantum
phenomena
information
science
various
integrated
systems.
All-electrical
pumping
of
single
create
light
emission
has
been
realized
several
platforms
including
color
centers
diamond
silicon
carbide,
which
could
lead
the
circuit
network
electrically
triggered
single-photon
sources.
However,
wide
conduction
channel
reduces
carrier
injection
per
defect
site
major
obstacle.
Here,
we
device
concept
construct
pumped
using
van
der
Waals
stacked
structure
with
atomic
plane
precision.
Defect-induced
tunneling
currents
across
graphene
NbSe2
electrodes
sandwiching
an
atomically
thin
h-BN
layer
allow
robust
persistent
generation
nonclassical
from
h-BN.
The
collected
photon
energies
range
between
1.4
2.9
eV,
revealing
electrical
excitation
variety
defects.
By
analyzing
dipole
axis
observed
emitters,
further
confirm
that
emitters
are
crystallographic
structures
crystal.
Our
work
facilitates
implementing
efficient
miniaturized
devices
toward
applications
optoelectronics.
ACS Nano,
Journal Year:
2024,
Volume and Issue:
18(9), P. 6887 - 6895
Published: Feb. 22, 2024
Atomic
defects
in
two-dimensional
(2D)
materials
impact
electronic
and
optoelectronic
properties,
such
as
doping
single
photon
emission.
An
understanding
of
defect–property
relationships
is
essential
for
optimizing
material
performance.
However,
progress
these
critical
hindered
by
a
lack
straightforward
approaches
accurate,
precise,
reliable
defect
quantification
on
the
nanoscale,
especially
insulating
materials.
Here,
we
demonstrate
that
lateral
force
microscopy
(LFM),
mechanical
technique,
can
observe
atomic
semiconducting
2D
under
ambient
conditions.
We
first
improve
sensitivity
LFM
through
consideration
cantilever
mechanics.
With
improved
sensitivity,
use
to
locate
atomic-scale
point
surface
bulk
MoSe2.
By
directly
comparing
conductive
(CAFM)
measurements
MoSe2,
observed
with
are
crystal.
As
does
not
require
pathway,
which
allows
characterization
materials,
hexagonal
boron
nitride
(hBN).
ability
intrinsic
hBN
introduced
annealing.
Our
demonstration
technique
applicable
both
will
enable
routine
determination
accelerate
research.
Advanced Materials,
Journal Year:
2024,
Volume and Issue:
36(23)
Published: March 13, 2024
Abstract
Quantum
light
sources
are
essential
building
blocks
for
many
quantum
technologies,
enabling
secure
communication,
powerful
computing,
and
precise
sensing
imaging.
Recent
advancements
have
witnessed
a
significant
shift
toward
the
utilization
of
“flat”
optics
with
thickness
at
subwavelength
scales
development
sources.
This
approach
offers
notable
advantages
over
conventional
bulky
counterparts,
including
compactness,
scalability,
improved
efficiency,
along
added
functionalities.
review
focuses
on
recent
advances
in
leveraging
flat
to
generate
Specifically,
generation
entangled
photon
pairs
through
spontaneous
parametric
down‐conversion
nonlinear
metasurfaces,
single
emission
from
emitters
dots
color
centers
3D
2D
materials
explored.
The
covers
theoretical
principles,
fabrication
techniques,
properties
these
sources,
particular
emphasis
enhanced
engineering
using
optical
resonances
supported
by
nanostructures.
diverse
application
range
is
discussed
current
challenges
perspectives
field
highlighted.