IEEE Open Journal of the Solid-State Circuits Society Special Section on Integrated Circuits and Systems Based on Thin-Film Transistors DOI Creative Commons
Kris Myny

IEEE Open Journal of the Solid-State Circuits Society, Journal Year: 2022, Volume and Issue: 2, P. 175 - 176

Published: Jan. 1, 2022

Thin-Film transistors (TFTs) are ubiquitous today as a backplane technology for various display and imager products. Those act switches in active-matrix liquid-crystal displays (AM-LCDs) or full-pixel engines, including driving threshold compensation, organic light-emitting diodes (AM-OLEDs) panels. TFT manufacturing requires only limited amount of photolithographic steps, making it relatively simple transistor technology, compared to the traditional Si CMOS technologies. The processing temperature technologies is sufficiently low be compatible with glass can even enable flexible substrates. Finally, these have been developed specifically large-area applications, such televisions X-ray scanners. Consequently, size TFTs has evolved from generation-1 panel 270 mm by 360 generation-10.5, which manufactured on 2.94 m $\times3.37$ [1] . This profoundly different integrated circuits, fabricated nowadays 200 300 round wafers. critical dimension substrate production range few micrometers. research field focuses enabling increasingly better pixel resolution, improved visual quality, larger panels LED walls, displays, camera-behind display, sensor integration, many more.

Language: Английский

41‐2: Invited Paper: Active‐matrix Digital Microfluidics System for High‐Throughput Droplet Sample Processing DOI
Shengzhe Jiang, Dongping Wang, Kaidi Zhang

et al.

SID Symposium Digest of Technical Papers, Journal Year: 2024, Volume and Issue: 55(S1), P. 343 - 346

Published: April 1, 2024

We introduce a high‐throughput field programmable active‐matrix digital microfluidics system designed for large‐scale biological experiments. The fabricated chip consists of 640×280‐pixel array, each pixel measuring at 100×100 μm . This configuration enables the addressing individual pixels, facilitating parallel droplet manipulation. utilizes 9T2C GOA circuits generating row scanning signals, and 3T1C to provide driving voltage pixels. exhibited notably elevated proficiency in high‐resolution generation manipulation, with over 80% division success rate more than 20 hours stable single‐droplet movement. minimum volume an amenable manipulation is 1.2 nL, featuring resolution four which two orders magnitude less previously reported IEDM. research lays foundation utilization realms vitro diagnostics chemical experiments focused on single‐cell analyses.

Language: Английский

Citations

0
Design of Droplet Manipulation Platform based on Digital Microfluidic Chip DOI
Wenbin Zheng,

Haodong Guo,

Lei Feng

et al.

2022 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), Journal Year: 2024, Volume and Issue: unknown, P. 1 - 6

Published: May 20, 2024

Language: Английский

Citations

0
IEEE Open Journal of the Solid-State Circuits Society Special Section on Integrated Circuits and Systems Based on Thin-Film Transistors DOI Creative Commons
Kris Myny

IEEE Open Journal of the Solid-State Circuits Society, Journal Year: 2022, Volume and Issue: 2, P. 175 - 176

Published: Jan. 1, 2022

Thin-Film transistors (TFTs) are ubiquitous today as a backplane technology for various display and imager products. Those act switches in active-matrix liquid-crystal displays (AM-LCDs) or full-pixel engines, including driving threshold compensation, organic light-emitting diodes (AM-OLEDs) panels. TFT manufacturing requires only limited amount of photolithographic steps, making it relatively simple transistor technology, compared to the traditional Si CMOS technologies. The processing temperature technologies is sufficiently low be compatible with glass can even enable flexible substrates. Finally, these have been developed specifically large-area applications, such televisions X-ray scanners. Consequently, size TFTs has evolved from generation-1 panel 270 mm by 360 generation-10.5, which manufactured on 2.94 m $\times3.37$ [1] . This profoundly different integrated circuits, fabricated nowadays 200 300 round wafers. critical dimension substrate production range few micrometers. research field focuses enabling increasingly better pixel resolution, improved visual quality, larger panels LED walls, displays, camera-behind display, sensor integration, many more.

Language: Английский

Citations

1