Research, Journal Year: 2024, Volume and Issue: 8
Published: Dec. 27, 2024
The optoelectronic memristor integrates the multifunctionalities of image sensing, storage, and processing, which has been considered as leading candidate to construct novel neuromorphic visual system. In particular, memristive materials with all-optical modulation complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient perception. As a p-type material, Cu
Language: Английский
Advanced Materials, Journal Year: 2023, Volume and Issue: 36(9)
Published: Sept. 23, 2023
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and systems. These OMs possess range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, the ability to replicate crucial neurological functions such vision optical memory. By incorporating large-scale parallel synaptic structures, are anticipated greatly enhance high-performance low-power in-memory computing, effectively overcoming limitations von Neumann bottleneck. However, progress in this field necessitates comprehensive understanding suitable structures techniques integrating low-dimensional materials into integrated circuit platforms. This review aims offer overview fundamental performance, mechanisms, design applications, integration roadmap memristors. establishing connections between materials, multilayer memristor units, monolithic circuits, seeks provide insights emerging technologies future prospects that expected drive innovation widespread adoption near future.
Language: Английский
Citations
51
Laser & Photonics Review, Journal Year: 2024, Volume and Issue: 18(10)
Published: May 3, 2024
Abstract Artificial visual memory systems have been of particular interest since the development machine vision and bionic robots. Ordinarily, conventional system architecture requires complex integration two functional modules, a photo‐sensor device, which greatly limits operating efficiency increases extra energy consumption. Nonetheless, other simply configured optoelectronics devices generally face challenges adaption in light environments. Here, resistive switching (RS) perovskite‐based photomemristor is presented that mimics retina function. The dual function perception situ storage are both achieved. In dark condition, it exhibits impressive performance with high ON/OFF ratio 10 4 , long retention time over s, low voltage 0.38 V. With illumination, shows self‐powered, broadband photo‐detecting characteristics responsivity 70 mA W −1 detectivity 7.5 × Jones. More importantly, benefiting from material dual‐phase configuration, highly steady photo‐adjusted RS windows Its light‐adaptive application dynamic environments further demonstrated using mimicking for eye. This work can provide strategy enhanced its changing varied scenarios.
Language: Английский
Citations
7
Advanced Science, Journal Year: 2024, Volume and Issue: 11(29)
Published: May 29, 2024
Abstract The optoelectronic resistive random‐access memory (RRAM) with the integrated function of perception, storage and intrinsic randomness displays promising applications in hardware level in‐sensor image cryptography. In this work, 2D hexagonal boron nitride based RRAM is fabricated semitransparent noble metal (Ag or Au) as top electrodes, which can simultaneous capture color generate physically unclonable (PUF) key for Surface plasmons metals enable strong light absorption to realize an efficient modulation filament growth at nanoscale. Resistive switching curves show that optical stimuli impede aggregation promote annihilation, originates from photothermal effects photogenerated hot electrons localized surface plasmon resonance metals. By selecting metals, array respond distinct wavelengths mimic biological dichromatic cone cells perform perception. Due high‐quality randomness, produce a PUF every exposure cycle, be applied reconfigurable findings demonstrate effective strategy build cryptography applications.
Language: Английский
Citations
6
Materials Today Nano, Journal Year: 2024, Volume and Issue: 25, P. 100461 - 100461
Published: Feb. 19, 2024
Language: Английский
Citations
4
Advanced Optical Materials, Journal Year: 2024, Volume and Issue: 12(18)
Published: April 30, 2024
Abstract Neuromorphic visual systems based on optogenetic techniques have colossal potential for in‐memory computing with prospects of developing artificial intelligence vision systems. However, conventional transistor architectures face formidable challenges in efficient signal processing owing to limitations the intrinsic properties active channel materials. In this work, a novel transition metal telluride‐sulfide hybrid heterojunction‐based optoelectronic synaptic phototransistor is proposed, which UV–vis responsive zinc oxide encapsulated few‐layer tungsten disulfide decorated near‐infrared sensitive 0D cobalt ditelluride (CoTe 2 ) nanocrystals (NCs), eliciting ability sense, store, and process optical signals across broad range electromagnetic spectrum. This meticulously designed three‐layered heterostructure, their interfacial band alignments, enables high photoresponsivity up ≈2.6 × 10 3 A W −1 at back‐gate bias 20 V, leading brain‐inspired applications an average power consumption as low 75 pJ each training process. The device exhibits excitatory postsynaptic current, paired‐pulse facilitation index above 150%, well light‐modulated plasticity by mimicking biological synapses, mainly originate from trapped holes Co‐vacancy mediated surface defect states CoTe NCs. Hence, 2D material‐based appears be promising candidate energy‐efficient next‐generation neuromorphic
Language: Английский
Citations
4
Nanoscale, Journal Year: 2025, Volume and Issue: unknown
Published: Jan. 1, 2025
Reliable parylene–PbTe memristors controlled via electrical and optical stimuli replicate key synaptic functions are applicable in neuromorphic computing systems.
Language: Английский
Citations
0
Nanomaterials, Journal Year: 2025, Volume and Issue: 15(7), P. 517 - 517
Published: March 29, 2025
This study explores the resistive switching (RS) behavior and conduction mechanisms of Ag/SF-Ag NP/Si memristors with varying Ag NP concentrations. I-V measurements confirm stable RS characteristics across 100 cycles, consistent set reset voltages. Increasing concentration enhances conductive filament formation, leading to sharper transitions a higher HRS/LRS ratio, w-hich increases from 43 (0 wt% NP) 4.6 × 104 (10 NP). Log(I)-log(V) analysis reveals transition Ohmic Poole–Frenkel mechanisms, indicating improved charge percolation. Reliability tests show LRS values, while HRS exhibits greater variation at These results demonstrate that NPs play crucial role in optimizing memristor performance, improving characteristics, enhancing reliability. The findings suggest are promising for high-performance memory neuromorphic computing applications.
Language: Английский
Citations
0
Nanotechnology, Journal Year: 2024, Volume and Issue: 35(32), P. 325204 - 325204
Published: May 3, 2024
There are several prospective applications for omnidirectional ultraviolet (UV) detectors and underwater detection in optical systems fields. In this work, ZnO nanorods arrays were grown on carbon fibers (CFs). An appropriate amount of Ag nanoparticles (NPs) was deposited the surface by photochemical deposition. This improved performance photoelectrochemical (PEC) based UV detectors. Under 365 nm 10 mW cm
Language: Английский
Citations
3
The Journal of Physical Chemistry Letters, Journal Year: 2024, Volume and Issue: 15(34), P. 8752 - 8758
Published: Aug. 20, 2024
Developing brain-inspired neuromorphic paradigms is imperative to breaking through the von Neumann bottleneck. The emulation of synaptic functionality has motivated exploration optoelectronic memristive devices as high-performance artificial synapses, yet realization such a modulatory terminal capable full light-modulation, especially near-infrared stimuli, remains challenge. Here, fully light-modulated memristor reported on P-MoSe
Language: Английский
Citations
2
Acta Physica Sinica, Journal Year: 2024, Volume and Issue: 0(0), P. 0 - 0
Published: Jan. 1, 2024
Memristors stand out as the most promising candidates for non-volatile memory and neuromorphic computing due to their unique properties. A crucial strategy optimizing memristor performance lies in voltage modulation, which is essential achieving ultra-low power consumption nanowatt range energy operation below femtojoule level. This capability pivotal overcoming barrier addressing computational bottlenecks anticipated post-Moore era. However, brain-inspired architectures that leverage high-density integrated arrays, it imperative consider key device stability parameters, including on/off ratio, high-speed response, retention time, durability. Achieving efficient stable ion/electron transport under low electric fields develop low-voltage, high-performance memristors operating 1 V critical advancing energy-efficient systems. review provides a comprehensive overview of recent advancements low-voltage computing. Firstly, begins by elucidating mechanisms govern operation, such electrochemical metallization anion migration. These play role determining overall reliability conditions. Secondly, then systematically examines advantages various material systems employed memristors, transition metal oxides, two-dimensional materials, organic materials. Each system offers distinct benefits, ion activation energy, appropriate defect density etc., are at voltages. Thirdly, consolidates strategies through advanced materials engineering, doping interface engineering. Moreover, potential applications function simulation discussed. Finally, current problems discussed, especially issues limited application scenarios. Future research directions proposed, focusing on exploring new physical could be into design achieve higher-performance memristors.
Language: Английский
Citations
1