ACS Materials Letters, Journal Year: 2025, Volume and Issue: unknown, P. 1228 - 1234
Published: March 4, 2025
Language: Английский
ACS Materials Letters, Journal Year: 2025, Volume and Issue: unknown, P. 1228 - 1234
Published: March 4, 2025
Language: Английский
ACS Nano, Journal Year: 2025, Volume and Issue: unknown
Published: Feb. 6, 2025
Achieving on-chip, full-UV-band photodetection across UV-A (315-400 nm), UV-B (280-315 and UV-C (100-280 nm) bands remains challenging due to the limitations in traditional materials, which often have narrow detection ranges require high operating voltages. In this study, we introduce a self-driven, on-chip photodetector based on heterostructure of hybrid gold nanoislands (Au NIs) embedded H-glass cesium bismuth iodide (Cs3Bi2I9). The Au NIs act as catalytic nucleation sites, enhancing crystallinity facilitating vertical alignment interconnected Cs3Bi2I9 petal-like thin film. A built-in electric field developed at heterojunction efficiently separates hot holes generated under UV illumination, transferring them valence band minimizing recombination losses. device demonstrates an ultrahigh open-circuit voltage 0.6 V, exceptional responsivity 0.88 A/W, threshold 90 nW/cm2, outperforming existing film-based photodetectors self-driven mode. Long-term stability tests confirmed robust operational reliability ambient conditions for up eight months. This architecture, driven by efficient hole dynamics, represents significant advancement optoelectronics with promising applications environmental monitoring, flame detection, biomedical diagnostics, secure communication systems.
Language: Английский
Citations
0ACS Materials Letters, Journal Year: 2025, Volume and Issue: unknown, P. 1228 - 1234
Published: March 4, 2025
Language: Английский
Citations
0