Asymmetric Schottky Contacts Enhanced Two-Dimensional Heterojunctions for Self-Powered Broadband and Polarization-Sensitive Photodetection

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: May 21, 2025

Schottky junction photodetectors, which utilize metal-semiconductor contacts, have attracted considerable attention due to their low cost, simplified fabrication process, and rapid response time. These attributes render them highly promising for applications in self-powered photodetection. Nevertheless, the Fermi-level pinning effect at interface, existence of defect states, substantial reverse leakage current back-to-back junctions devices often lead difficulties achieving precise modulation barrier suboptimal rectification performance. In this study, an enhanced Au/2H-MoTe2/1T'-MoTe2 heterojunction based on asymmetric contacts is proposed constructing a broadband polarization-sensitive photodetector. The incorporation van der Waals material 1T'-MoTe2 mitigates effect, thereby significantly enhancing performance, with ratio exceeding 104. Furthermore, intrinsic in-plane anisotropy endows polarization photodetection capabilities. wavelength-dependent photocurrent varies from 2.61 405 nm 5.4 808 nm. More importantly, presence two codirectional built-in fields interface effectively extends both range overall exhibits ranging 2200 zero bias. Under 660 laser irradiation, it demonstrates peak On/Off 5.97 × 104, responsivity (R) 80.59 mA/W, external quantum efficiency (EQE) 15.14%, specific detectivity (D*) 1.05 1012 Jones. This research not only high-performance multifunctional photodetector but also offers valuable insights into development advanced photodetectors.

Language: Английский

Strain-Dependent Photodetection with Layered InSe Photoconductors

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: June 3, 2025

Controlled bandgap modulation is of particular interest for next generation optoelectronic devices, allowing the development 'active' or 'reconfigurable' detectors and emitters. In van der Waals layered semiconductors, which exhibit high strain tolerance, has become a notable tool active tuning. this work, we demonstrate flexible bulk InSe gated photoconductor with strain-induced energy, shifting to higher lower energies under compression tension, respectively. Photoluminescence measurements reveal shift rates around 117.1 meV·%-1 in tension 107.6 compression. Spectral responsivity indicate smaller rates, likely due nonuniform application. Notably, these devices achieve impressive performance specific detectivities up 3.78 × 1012 cm·Hz1/2·W-1, rise time 4.1 μs, 1.25 103 A·W-1. The realization fast response times underscores potential device architecture advanced applications.

Language: Английский

Theoretical Studies of Local Strain-Induced Heterogeneity in Electronic and Phononic Properties of WSe₂ Nanostructures

The Journal of Physical Chemistry C, Journal Year: 2025, Volume and Issue: unknown

Published: June 4, 2025

Language: Английский