Published: July 4, 2024
Language: Английский
Nanoscale, Journal Year: 2024, Volume and Issue: unknown
Published: Jan. 1, 2024
This paper provides a comprehensive review of the latest research advancements in overcoming Debye screening effect field-effect transistor (FET) sensors.
Language: Английский
Citations
3
Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: 503, P. 158532 - 158532
Published: Dec. 11, 2024
Language: Английский
Citations
2
Talanta Open, Journal Year: 2024, Volume and Issue: unknown, P. 100394 - 100394
Published: Dec. 1, 2024
Language: Английский
Citations
0
Applied Physics Letters, Journal Year: 2024, Volume and Issue: 124(17)
Published: April 22, 2024
In this Letter, an epitaxial and device design has been proposed for the noninvasive detection of COVID-19 using a portable hand-held system. A ∼1.5-fold enhancement in sensitivity was observed meander-gated biosensor as compared to conventional design. The further enhanced by ∼1.70 times when dual cap layer used instead peak 252.70 μA/pg/ml with good linearity IL-6 hyposmia. Thus, importance demonstrated. Saliva-based offers 22.96 μA/pg/ml. biosensing platform shelf-life around 4 weeks minute change ∼1.26% sensitivity, fast (<10 s), limit 0.24 fg/ml, linear dynamic range 0.1–80.0 pg/ml. potential early detection, prognosis, management point-of-care application areas.
Language: Английский
Citations
0
Semiconductor Science and Technology, Journal Year: 2024, Volume and Issue: 39(6), P. 065020 - 065020
Published: April 24, 2024
Abstract
Dielectrically
modulated
(DM)
negative
capacitance
field
effect
transistor
(NCFET)-based
label-free
biosensors
have
emerged
as
promising
devices
for
accurate
detection
of
various
biomolecules,
where
the
sensitivity
DM
architectures
strongly
depends
on
sensing
mechanism
well
size
nanocavity.
Therefore,
to
achieve
higher
along
with
reduced
fabrication
complexity,
we
propose
utilize
a
pre-existing
drain-side
spacer
region
nanocavity,
in
fully
depleted
silicon-on-insulator-based
NCFET
architecture.
The
ferroelectric
(FE)
layer
metal-ferroelectric-insulator-semiconductor
configuration
meaningfully
alters
impact
drain’s
electric
source-side
electrostatics,
which
results
sensitivity.
Having
quantified
an
FE-dielectric
(FE-DE)
gate-stack-based
biosensor,
now
include
paraelectric
(PE)
between
FE
and
DE
materials,
thus
modifying
gate
stack
from
FE-DE
FE-PE-DE
equivalent
seen
both
stacks;
here,
remarkable
improvement
is
NCFET,
nearly
identical
linearity
performance,
high
Pearson’s
coefficient
value
(
Language: Английский
Citations
0
Published: July 4, 2024
Language: Английский
Citations
0