Highly Efficient Blue Light‐Emitting Diodes with Low Efficiency Roll‐Off Based on Large‐Size and Gradient Alloy Quantum Dots DOI
Fangfang Wang,

Qingzhao Hua,

Qingli Lin

et al.

Small Methods, Journal Year: 2025, Volume and Issue: unknown

Published: May 15, 2025

Abstract Quantum dot light‐emitting diodes (QD‐LEDs) exhibit significant advancements in new‐generation display and lighting applications that require high efficiency, brightness, resolution, such as automotive heads‐up displays (HUD) augmented reality (AR)/virtual (VR). However, state‐of‐the‐art blue QD‐LEDs have yet to meet these requirements due defect‐induced nonradiative recombination unbalanced carrier injection. Herein, a novel quantum dots (QDs), which feature large‐size (≈10.5 nm) CdSe@ZnSe gradient alloy core an ultra‐thin ZnS outermost shell, been demonstrated through reversely adding seed crystal with composition regulating. The as‐synthesized QDs possess near‐unity yield, shallower hole injection barrier, excellent photo‐chemical stability. By employing CdSe@ZnSe/ZnS the emitting layers (EML), electroluminescence (EL) peak at 475 nm record‐high external efficiency (EQE) of 24.3% low roll‐off, sustaining over 90% maximum EQE within luminance 2,220–22,910 cd m −2 . Key success is suppression defect‐related recombination, reduced leakage current, improves charge balance QD structural engineering. This work indicates potential newly developed promoting commercialization QD‐LEDs.

Language: Английский

Highly Efficient Blue Light‐Emitting Diodes with Low Efficiency Roll‐Off Based on Large‐Size and Gradient Alloy Quantum Dots DOI
Fangfang Wang,

Qingzhao Hua,

Qingli Lin

et al.

Small Methods, Journal Year: 2025, Volume and Issue: unknown

Published: May 15, 2025

Abstract Quantum dot light‐emitting diodes (QD‐LEDs) exhibit significant advancements in new‐generation display and lighting applications that require high efficiency, brightness, resolution, such as automotive heads‐up displays (HUD) augmented reality (AR)/virtual (VR). However, state‐of‐the‐art blue QD‐LEDs have yet to meet these requirements due defect‐induced nonradiative recombination unbalanced carrier injection. Herein, a novel quantum dots (QDs), which feature large‐size (≈10.5 nm) CdSe@ZnSe gradient alloy core an ultra‐thin ZnS outermost shell, been demonstrated through reversely adding seed crystal with composition regulating. The as‐synthesized QDs possess near‐unity yield, shallower hole injection barrier, excellent photo‐chemical stability. By employing CdSe@ZnSe/ZnS the emitting layers (EML), electroluminescence (EL) peak at 475 nm record‐high external efficiency (EQE) of 24.3% low roll‐off, sustaining over 90% maximum EQE within luminance 2,220–22,910 cd m −2 . Key success is suppression defect‐related recombination, reduced leakage current, improves charge balance QD structural engineering. This work indicates potential newly developed promoting commercialization QD‐LEDs.

Language: Английский

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