All-optical broadband terahertz modulator based on NiO/Si heterojunction and interface photoconductivity analysis DOI Creative Commons
Minjie Zhou,

Ao Li,

Shuhan Li

et al.

APL Materials, Journal Year: 2025, Volume and Issue: 13(3)

Published: March 1, 2025

All-optical THz heterojunction modulators have gained significant attention to meet the demanding requirements of next-generation wireless communication technologies. Self-powered photodetectors high separation and utilization photoinduced charge carriers even without external power sources. This efficiency is attributed built-in electric field between layers, a crucial factor for all-optical modulators. Consequently, NiO/Si heterojunctions are anticipated function as high-performance In this work, were fabricated, their modulation properties characterized using THz-time-domain spectroscopy (THz-TDS). The results demonstrate that exhibits broadband (0.4–1.6 THz) with depth 85% (at 2 W/cm2 532 nm laser irradiation), representing three-fold enhancement compared bare silicon. Simple optical switching experiments further underscore potential these encoding information onto transmission waves. mechanism was elucidated through band theory photoconductivity measurements. carrier mobility estimated be 8285 cm2/(V s) under irradiation, surpassing values other typical high-carrier-mobility materials. suggest core materials self-powered can serve promising foundation addition, THz-TDS emerges sensitive non-contact technique evaluating performance photodetectors.

Language: Английский

All-optical broadband terahertz modulator based on NiO/Si heterojunction and interface photoconductivity analysis DOI Creative Commons
Minjie Zhou,

Ao Li,

Shuhan Li

et al.

APL Materials, Journal Year: 2025, Volume and Issue: 13(3)

Published: March 1, 2025

All-optical THz heterojunction modulators have gained significant attention to meet the demanding requirements of next-generation wireless communication technologies. Self-powered photodetectors high separation and utilization photoinduced charge carriers even without external power sources. This efficiency is attributed built-in electric field between layers, a crucial factor for all-optical modulators. Consequently, NiO/Si heterojunctions are anticipated function as high-performance In this work, were fabricated, their modulation properties characterized using THz-time-domain spectroscopy (THz-TDS). The results demonstrate that exhibits broadband (0.4–1.6 THz) with depth 85% (at 2 W/cm2 532 nm laser irradiation), representing three-fold enhancement compared bare silicon. Simple optical switching experiments further underscore potential these encoding information onto transmission waves. mechanism was elucidated through band theory photoconductivity measurements. carrier mobility estimated be 8285 cm2/(V s) under irradiation, surpassing values other typical high-carrier-mobility materials. suggest core materials self-powered can serve promising foundation addition, THz-TDS emerges sensitive non-contact technique evaluating performance photodetectors.

Language: Английский

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