Sol-gel spin coating of ZnO thin films for hydrophobic and radiation resistant applications DOI
Venkatesh Yepuri,

S. Saravanan,

V. Swaminadham

et al.

Journal of Sol-Gel Science and Technology, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 23, 2024

Language: Английский

Electrochemistry and band structure of semiconductors (TiO2, SnO2, ZnO): Avoiding pitfalls and textbook errors DOI Creative Commons
Ladislav Kavan

Journal of Solid State Electrochemistry, Journal Year: 2024, Volume and Issue: 28(3-4), P. 829 - 845

Published: Jan. 4, 2024

Abstract This paper reviews selected problems, which appear in literature dealing with TiO 2 , SnO and ZnO. Some of them have more universal impact to semiconductor electrochemistry. The electronic band structure is a key for understanding fundamental properties rational design applications, but the uncertainty specific values determined experimentally or by theoretical calculations should not be ignored. inappropriate use Mott-Schottky plot characterization certain electrodes another source problems. other technical formal issues research development semiconductors are discussed.

Language: Английский

Citations

23
Mid-gap states induced by sulfur substitution in ZnO nanoparticle via low solvothermal temperature for enhanced photocatalytic NOx removal under visible light irradiation DOI Creative Commons
Ardiansyah Taufik, Rosari Saleh, Tohru Sekino

et al.

Materials Science in Semiconductor Processing, Journal Year: 2025, Volume and Issue: 189, P. 109299 - 109299

Published: Jan. 18, 2025

Language: Английский

Citations

4
Effect of Fe ion beam irradiation on structural, surface, optical, and electrical properties of ZnO thin films prepared by radio frequency sputtering DOI

M. Fiaz Khan,

K. Siraj,

Shahbaz Majeed

et al.

Journal of Ovonic Research, Journal Year: 2025, Volume and Issue: 21(1), P. 19 - 27

Published: Jan. 9, 2025

In this work, ZnO thin films were exposed to 80 keV Fe+1 ions at different fluences (1 x 1013, 1 1014, 5 1015 ions/cm2 ). With the help of X-ray diffraction (XRD), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), and four-point probe technique, we able measure structural surface morphology, optical, electrical properties both untreated irradiated films. research showed that crystallite size was diminished from its pristine level with fluence 1013 , but increased along ion fluence, resulting in higher levels crystallinity SEM images a film atthe 1014 revealed acicular patterns on surface. The resistivity decreases as increases. Consistency between findings supports idea observed behavior is due confined heating effect generated by irradiation

Language: Английский

Citations

0
Fabrication of Heterojunction MoS2/ZnO Nanosheets as Active Photocatalyst for H2 Evolution Through Glycerol Reforming DOI
Reda M. Mohamed, L.A. Al-Hajji, Adel A. Ismail

et al.

Journal of Inorganic and Organometallic Polymers and Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 26, 2025

Language: Английский

Citations

0
Effect of sputter power on red-shifted optoelectronic properties in magnetron sputtered Ag/ZnO thin films DOI

A. Guru Sampath Kumar,

C. Mahender,

U. Mahesh Kumar

et al.

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Journal Year: 2024, Volume and Issue: 42(5)

Published: Aug. 26, 2024

This study explores Ag/ZnO thin films on glass (Corning 0211) substrates, which were deposited using dc/rf magnetron reactive sputtering at varying Ag-sputter powers. The impact of power physical properties, such as structural, surface, compositional, optical, and electrical is systematically explored. Grazing angle x-ray diffraction affirms a single-phase hexagonal wurtzite ZnO structure in all films, predominantly oriented along (002) normal to the substrate. Thin 90 W exhibit superior structural morphological including greatest crystallite grain size, minimum stress, roughness. Electrical studies indicate that material exhibits semiconducting nature, with its resistivity decreasing 0.8 Ω cm 95 W. At this level Ag sputter power, demonstrate low resistivity, high mobility (0.49 cm2/V s), charge carrier concentration 9.6 × 1019 cm−3, an optical transmittance 79%, band gap energy (Eg) 3.06 eV. underscores influence tailoring for optoelectronic applications.

Language: Английский

Citations

3
Room-temperature synthesis of ZnO-based quantum dots for enhanced electron/ion transport in ultra-stable hybrid supercapacitors DOI
Awais Ali, Faisal Rehman, Saifuddin Ahmed

et al.

Journal of Energy Storage, Journal Year: 2025, Volume and Issue: 116, P. 116033 - 116033

Published: March 5, 2025

Language: Английский

Citations

0
Peculiar photoelectrochemical activity of zinc oxide and tin dioxide DOI
Ladislav Kavan, Hana Krýsová, Markéta Zukalová

et al.

Journal of Photochemistry and Photobiology A Chemistry, Journal Year: 2024, Volume and Issue: 458, P. 115929 - 115929

Published: Aug. 9, 2024

Language: Английский

Citations

1
TEM and DFT calculation on the nanostructure and self-cleaning performance of in-situ grown Zn-doped graphene-based films DOI
Xin Mei,

Yuling Lu,

Dayu Li

et al.

Vacuum, Journal Year: 2024, Volume and Issue: unknown, P. 113653 - 113653

Published: Sept. 1, 2024

Language: Английский

Citations

1
Work Function and Electrochemistry of ZnO (Wurtzite) Single Crystals (F-1:L07) DOI

Michael Vorochta,

Věra Mansfeldová,

Samiran Chakraborty

et al.

Ceramics International, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 1, 2024

Language: Английский

Citations

0
Sol-gel spin coating of ZnO thin films for hydrophobic and radiation resistant applications DOI
Venkatesh Yepuri,

S. Saravanan,

V. Swaminadham

et al.

Journal of Sol-Gel Science and Technology, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 23, 2024

Language: Английский

Citations

0