Architecture guidelines for Cu2SrSnS4 solar cells using chalcogenide and oxide hole transport layers by SCAPS-1D simulation
Journal of Physics and Chemistry of Solids,
Journal Year:
2025,
Volume and Issue:
unknown, P. 112732 - 112732
Published: March 1, 2025
Language: Английский
Elucidating the Potential Strategies for Performance Improvement of CBTSSe‐Based Solar Cells: A Pathway Toward 20% Efficiency
Energy Technology,
Journal Year:
2024,
Volume and Issue:
12(4)
Published: Jan. 10, 2024
Cu
2
BaSnS
4−
x
Se
(CBTSSe)
has
recently
attracted
substantial
attention
as
an
emerging
chalcogenide
material
due
to
its
abundant
constituent
elements
and
reduced
antisite
disorders
compared
the
ZnSn(S,Se)
4
(CZTSSe).
In
this
work,
reported
Mo/CBTSSe/Cd:ZnS
Zn
1−
Cd
S/i‐Mg:ZnO
(ZMO)/Al:ZnO
(AZO)
cell
structure
with
power
conversion
efficiency
(PCE)
of
6.17%
is
used
develop
baseline
model.
Afterwards,
device
performance
parameters
are
fine‐tuned
by
investigating
effect
(a)
absorber
thickness
defect
density,
(b)
absorber/buffer
conduction
band
offset,
(c)
interface
(d)
anti‐reflection
coating
at
front
layer,
(e)
back
contact
optimization.
The
optimized
parameter
values
thickness:
1.2
μm,
density:
10
15
cm
−3
,
alternate
buffer
layer
WS
density:10
−2
resulting
in
PCE
12.94%.
Introducing
anti‐reflective
(ARC)
further
improves
17.87%.
Finally,
introducing
Ni
a
instead
Mo
enhances
20.70%.
These
results
provide
insight
into
possible
techniques
improve
CBTSSe‐based
solar
cells.
Language: Английский
Simulation of thin insulating tunnel layer for Cu2ZnSnS4/CdS interface passivation
S. Purushotham,
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G. Ramkumar,
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V. Kannan
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et al.
Physica Scripta,
Journal Year:
2023,
Volume and Issue:
98(12), P. 125951 - 125951
Published: Nov. 8, 2023
Abstract
The
CZTS
solar
cell
has
a
high
voltage
deficit
due
to
interfacial
recombination.
detrimental
issues
of
conduction
band
offset,
bandgap
narrowing,
interface
defects
and
surface
inversion
at
the
CZTS/CdS
junction
are
causing
accelerated
recombination
huge
V
OC
FF
deficits.
We
proposed
theoretically
analyzed
thin
insulating
tunnel
layer
for
selective
blocking
holes
passing
electrons
through
intraband
tunnelling.
role
an
in
neutralizing
defect
controlling
is
explored.
configurations
with
have
shown
reduced
current
higher
quantum
efficiency.
incorporated
devices
stable
performance
increasing
as
opposed
without
layer,
which
shows
decreasing
defects.
device
η
=
14.15%,
,
J
SC
0.95
V,
24.5
mA
cm
−2
60.6%,
respectively.
corresponding
parameter
efficiency
10.9%,
0.73
21.8
fill
factor
68.3%.
result
optimized
passivation
by
expected
stimulate
experimentalists
field.
Language: Английский
Optimizing CBTSSe solar cells for indoor applications through numerical simulation
Optical and Quantum Electronics,
Journal Year:
2023,
Volume and Issue:
55(14)
Published: Oct. 26, 2023
Language: Английский
Development of Sub‐Band in Spray‐Deposited Cr‐Substituted Chalcopyrite Thin Films for Advancing Solar Cell Efficiency
Karthikeyan Vijayan,
No information about this author
T. Logu,
No information about this author
S. P. Vijayachamundeeswari
No information about this author
et al.
Energy Technology,
Journal Year:
2024,
Volume and Issue:
12(5)
Published: Feb. 14, 2024
Designing
effective
strategies
for
mitigating
energy
crisis
highlights
a
research
gap
in
current
solar
cell
technologies.
This
study
explores
the
inherent
physicochemical
properties
of
thin
films
composed
copper
gallium
sulfide
telluride
(CuGa
1−
x
Cr
(S,Te)
2
)
with
chromium
substitution,
prepared
through
chemical
spray
pyrolysis
technique.
The
investigation
showcases
how
concept
intermediate
band
structuring
contributes
to
enhancing
efficiency.
enhancement
can
be
attributed
remarkable
mobility
(from
1.80
5.48
cm
V
−1
s
and
conductivity
1.00
6.06
S
exhibited
by
pure
0.1
films,
respectively.
Notably,
Cr‐0.1‐substituted
CGST
film
displays
maximum
photoresponsivity
0.624
AW
,
an
external
quantum
efficiency
145%,
detectivity
2.37E10.
fabricated
is
subjected
theoretical
simulation
using
capacitance
simulator‐1D
software,
revealing
upward
trend
from
7.13%
11.23%
increasing
substitution
0.025
0.1.
improvement
ascribed
reduction
bandgap
2.40
1.72
eV)
creation
sub‐band
due
incorporation,
as
substantiated
UV–vis
NIR
spectroscopy.
These
outcomes
suggest
that
holds
promise
potential
absorber
material
photovoltaics.
Language: Английский
Enhanced Efficiency of Thin‐Film Solar Cells via Cation‐Substituted Kesterite Absorber Layers and Nontoxic Buffers: A Numerical Study
BALAJI GURURAJAN,
No information about this author
Atheek Posha,
No information about this author
Wei‐Sheng Liu
No information about this author
et al.
physica status solidi (b),
Journal Year:
2024,
Volume and Issue:
unknown
Published: July 30, 2024
Herein,
the
1D
Solar
Cell
Capacitance
Simulator
software
is
used
to
perform
numerical
analysis
of
thin‐film
solar
cells
with
Cu
2
ZnSnS
4
,
BaSnS
FeSnS
and
MnSnS
absorber
layers.
The
main
goal
investigate
impact
parameters,
such
as
layer
thickness,
acceptor
density,
buffer
layer,
bandgap,
donor
on
efficiency
these
cells.
investigation
entails
varying
thickness
density
evaluate
their
influence
cell.
A
new
zinc
oxide
sulfide
(Zn(O,S))
also
introduced
instead
conventional
cadmium
(CdS)
layer.
Zn(O,S)
bandgap
its
which
are
investigated
in
terms
how
they
affect
cells,
have
been
varied.
optimal
values
for
calculated.
Subsequently,
evaluated
find
any
potential
defects
that
may
These
results
confirm
can
be
utilized
a
This
study
concludes
layers
superior
comparison
.
Language: Английский
Thickness optimization of Al_2O_3 tunneling layer in CBTS solar cells using SCAPS software
HENNI Wafaâ,
No information about this author
RAHAL Wassila Leila,
No information about this author
RACHED Djaafar
No information about this author
et al.
Proceedings of International Exchange and Innovation Conference on Engineering & Sciences (IEICES),
Journal Year:
2023,
Volume and Issue:
9, P. 59 - 64
Published: Oct. 19, 2023
r
layer.
initially,
we
performed
a
comparative
analysis
between
Mo/MoS_2/CBTS/CdS/ZnO/AZO/Al
and
Mo/MoS2/CBTS/
Al_2O_3/CdS/ZnO/AZO/Al
using
SCAPS-1D.
Subsequently,
conducted
an
investigation
into
the
impact
of
Al2O3
thickness
on
cell
performance.
Our
findings
indicate
that
photovoltaic
parameters
deteriorate
with
increase
in
Al_2O_3
layer
thickness,
3nm
is
sufficient
to
facilitate
electrons
intra-band
tunneling.
The
PCE
reference
(without
Al_2O_3)
6.75%.
Upon
inserting
alumina
layer,
device
exhibits
11.89%
VOC,
JSC,
FF
equal
1.08
V,
15.45
mA/cm²
71.41
%
respectively.
Although
efficiency
not
fully
optimized
this
study,
we've
highlighted
significant
utility
advancing
CBTS
solar
cells
development.
Language: Английский